USB POWER CONTROL SWITCHES

The A2525EL/M and A2535EL/M are integrated high-side power switches, optimized for self-powered and bus-powered Universal Serial Bus (USB) applications. Few external components are necessary to satisfy USB requirements. The A2525EL/EM ENABLE inputs are active high; the A2535EL/EM are active low.

Fast Ethernet Cat5e Data Single-Ended Cordset

Product Description Fast Ethernet Cat5e Data Single-Ended Cordset: M12 Standard, male, angled, 4-pin, D-coded, shielded, black body, 50 V AC / 60 V DC, 4 A; PUR green cable, 4-wires, 2x2x0.34 mm²

Feets of Strength

文件：91.42 Kbytes Page：1 Pages

包装：散装 描述：0985 342 130/15 M 电缆组件 圆形电缆组件

包装：散装 描述：3M ALL WEATHER DUCT TAPE 胶带，粘合剂，材料 胶带

USBPOWERCONTROLSWITCHES

丝印代码：2525N04L；MOSFET OptiMOS™ 3 Power‑Transistor, 40 V

Features • Dual N‑channel, logic level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

丝印代码：25256E；EEPROM Serial 256-Kb SPI

文件：387.55 Kbytes Page：22 Pages

WSEN-HIDS Humidity sensor with integrated temperature sensor

General Information: Properties Value Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging) 10 °C up to + 50 °C; 20 up to 60 RH Communication interface I2C Moisture Sensitivity Level (MSL) 1 Electrostatic discharge protection (HBM) 2 Electrostatic discharge

20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers

20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-2520, HA-2522, HA-2525 comprise a series of operational amplifiers delivering an unsurpassed combination of specifications for slew rate, bandwidth and settling time. These dielectrically isolated amplifiers are

20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers

20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-2520, HA-2522, HA-2525 comprise a series of operational amplifiers delivering an unsurpassed combination of specifications for slew rate, bandwidth and settling time. These dielectrically isolated amplifiers are

专用传感器

IF Filters - Over 70 MHz

185.0 MHz SAW Filter

文件：172.77 Kbytes Page：2 Pages

165.0 MHz SAW Filter

文件：192.96 Kbytes Page：2 Pages

Typical 1.5dB bandwidth of 24.9 MHz

文件：184.51 Kbytes Page：2 Pages

Typical 1dB bandwidth of 24.9 MHz

文件：179.32 Kbytes Page：2 Pages

Primary current: 32 A, Secondary current max.: 1A, Load: 0.2 VA

文件：312.21 Kbytes Page：3 Pages

SL 5.08HC/07/180B 3.2SN WH BX

文件：480.95 Kbytes Page：4 Pages

Typical 1dB bandwidth of 24.6 MHz

文件：171.26 Kbytes Page：2 Pages

Typical 1dB bandwidth of 24.7 MHz

文件：184.64 Kbytes Page：2 Pages

PRINTING RIBBONS AND INKS TECHNICAL DATASHEET

文件：128.35 Kbytes Page：12 Pages

Bobbin Mounts - Type DD (Female - Female)

文件：87.71 Kbytes Page：1 Pages

Bobbin Mounts - Type VV (Male - Male)

文件：271.09 Kbytes Page：2 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i