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24LC08BH价格
参考价格：￥2.0837
型号：24LC08BH-E/SN 品牌：Microchip 备注：这里有24LC08BH多少钱，2026年最近7天走势，今日出价，今日竞价，24LC08BH批发/采购报价，24LC08BH行情走势销售排行榜，24LC08BH报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
24LC08BH | 8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 |   | |
24LC08BH | 8Kb I2C compatible 2-wire Serial EEPROM with Half-Array Write Protection The Microchip Technology Inc. 24LC08BH is a 8Kb I2C™ compatible Serial EEPROM with half array write protection. The device is organized as four blocks of 256 x 8-bitmemory with a 2-wire serial interface. Low-voltage design permits operation down to 2.5V, with standby and active currents of only 1 µA Single Supply with Operation Down to 2.5V\nLow-Power CMOS Technology\n2-Wire Serial Interface, I2C™ Compatible\nSchmitt Trigger Inputs for Noise Suppression\nOutput Slope Control to eliminate Ground Bounce\n100 kHz and 400 kHz Clock Compatibility\nPage Write Time 3 ms, typical\nSelf-Timed Erase/Writ; | MICROCHIP 微芯科技 | | |
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect Description: The Microchip Technology Inc. 24AA08H/24LC08BH (24XX08H*) is an 8 Kbit Electrically Erasable PROM. The device is organized as four blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of onl | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR）卷带（TR） 描述：IC EEPROM 8KBIT I2C 400KHZ 8DIP 集成电路（IC） 存储器 | MICROCHIP 微芯科技 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC EEPROM 8KBIT I2C 400KHZ 8SOIC 集成电路（IC） 存储器 | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | | ||
8K I2C??Serial EEPROM with Half-Array Write-Protect 文件：899.82 Kbytes Page：32 Pages | MICROCHIP 微芯科技 | |
24LC08BH产品属性
- 类型
描述
- 型号
24LC08BH
- 功能描述
电可擦除可编程只读存储器 8K 1K X 8 2.5V SER EE EXT 1/2 ARRAY WP
- RoHS
否
- 制造商
Atmel
- 存储容量
2 Kbit
- 组织
256 B x 8
- 数据保留
100 yr
- 最大时钟频率
1000 KHz
- 最大工作电流
6 uA
- 工作电源电压
1.7 V to 5.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP/微芯 |
25+ |
20000 |
原装 |
||||
Microchip |
23+ |
2017-MI |
21500 |
受权代理!全新原装现货特价热卖! |
|||
Microchip(微芯) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MICROCHIP/微芯 |
21+ |
20005 |
MIC/微芯优势分销 实单必成 可开13点增值税 |
||||
MICROCHIP(美国微芯) |
21+ |
TDFN-8(2x3) |
18800 |
原装优势现货 |
|||
MICROCHIP |
23+ |
SOT23 |
20000 |
||||
MICROCHIP |
25+ |
SOT23 |
10000 |
原装正品,支持实单,可配单 |
|||
MICROCHIP(美国微芯) |
21+ |
TDFN-8(2x3) |
18800 |
全新、原装 |
|||
MICROCHIP |
26+ |
SOT23 |
5000 |
十年沉淀唯有原装 |
|||
Microchip |
24+ |
原封装 |
44520 |
郑重承诺只做原装进口现货 |
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- 24LC04BT-I/OT
- 24LC04BT-I/MS
- 24LC04BT-I/MNY
- 24LC04BT-I/MC
- 24LC04BT-E/SN
- 24LC04BT-E/OT
- 24LC04BT/SN-CUTTAPE
- 24LC04BT/SN
- 24LC04B-I/ST
- 24LC04B-I/SN
- 24LC04B
- 24LC04
- 24LC02B
- 24LC025
- 24LC024
- 24LC02
- 24LC01B
- 24LC014
- 24LC01
- 24LC00T
- 24LC00
- 24IMS7
- 24IMS15
- 24HSD
- 24HSC
- 24HSB
- 24HSA
- 24HCD
24LC08BH数据表相关新闻
24LC256T-I/SN Microchip Technology EEPROM 存储器 IC 256Kb I2C 400 kHz 900 ns 8-SOIC
24LC256T‑I/SN 是 Microchip（微芯）256Kbit（32KB）I2C 接口串行 EEPROM，SOIC‑8 封装，工业级温度（‑40℃～+85℃），主打掉电永久保存、低功耗、小体积、I2C 总线易扩展，广泛用于各类嵌入式系统的非易失性数据存储
2026-6-824LC128T-I MSOP-8封装 电可擦除可编程只读存储器
24LC128T-I MSOP-8封装 Microchip/微芯 电可擦除可编程只读存储器 10000pcs
2024-8-1224LC128T-I/SN资料参数
24LC128T-I/SN
2022-6-2424LC024-E/SN
24LC024-E/SN
2021-7-1624LC02BT-I/SN原装正品-长期货源-欢迎取样
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-2724LC02BT-I/SN原厂很远 现货很近
原厂很远 现货很近 坚持每一片芯片都来自原厂及授权渠道
2020-5-7
DdatasheetPDF页码索引
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