1K I2C??Serial EEPROM with Half-Array Write-Protect

Description: The Microchip Technology Inc. 24AA01H/24LC01BH (24XX01H*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1

1K/2K 2-Wire CMOS Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat

1K/2K I 2 C ??Serial EEPROMs in ISO Micromodules

Description: The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA an

1K/2K I 2 C ??Serial EEPROMs in ISO Micromodules

Description: The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA an

1K I2C Serial EEPROM

Description: The Microchip Technology Inc. 24AA01/24LC01B (24XX01*) is a 1 Kbit Electrically Erasable PROM. The device is organized as one block of 128 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 μA an

1K/2K 2-Wire CMOS Serial EEPROM

General Description The HT24LC01/02 is a 1K/2K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024/2048 bits of memory are organized into 128/256 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applicat