Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

MicroSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier ??Series

文件：179.31 Kbytes Page：9 Pages

MicroSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier ??Series

文件：179.31 Kbytes Page：9 Pages