| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
20J321 | Silicon N Channel IGBT High Power Switching Applications 文件：197.12 Kbytes Page：7 Pages | TOSHIBA 东芝 |   | |
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
High Power Switching Applications Fast Switching Applications High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 μs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) | TOSHIBA 东芝 | | ||
Silicon N Channel IGBT High Power Switching Applications 文件：197.12 Kbytes Page：7 Pages | TOSHIBA 东芝 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
TOSHIBA |
1215+ |
TO-220F |
150000 |
全新原装,绝对正品,公司大量现货供应. |
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