Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or rep

Heterojunction Bipolar Transistor Technology

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or re

APD Receiver Module up to 3 Gb/s

Description Fiber optic receiver front-end module for STM-16 and OC-48 WDM applications. The module includes an InGaAs Avalanche Photo Diode (APD), with a low noise GaAs MMIC preamplifier in a 14 pin butterfly package.The module is equipped with an internal thermistor. The single-mode fiber pigta

Fast Avalanche Sinterglass Diode

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Heterojunction Bipolar Transistor Technology

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