DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

Ultra High Speed Switching Application ● Small package : SC-59 ● Low forward voltage : VF (3) = 0.92V (Typ.) ● Fast reverse recovery time : trr = 1.6ns (Typ.) ● Small total capacitance : CT = 2.2pF (Typ.)

150mW High Speed Switching Diodes 80 Volt

Features • Low Forward Voltage • Low Leakage Current • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) Max

Surface Mount Switching Diodes 100m AMPERES 80 VOLTS

SWITCHING DIODE 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications

100mA Surface Mount Switching Diode

Features • Low forward voltage VF(3)=0.92V(typ). • Fast switching. • Fast reverse recovery time:trr=1.6ns(typ)

Surface mount switching diode

FEATURES • Low forward voltage VF(3)=0.92V(typ). • Fast switching. • Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS • High speed switching application.

SWITCHING DIODE

FEATURES • Power dissipation PD(Ta=25℃) 225 mW • Forward Current IF = 200 mA • Reverse Voltage VR = 80 V • Junction and Storage Temperature TJ, Tstg -55 to +150℃

Switching Diodes

Switching Diodes FEATURES • Low forward voltage • Fast reverse recovery time

ULTRA HIGH SPEED SWITCHING APPLICATION

Features • Small Package • Low forward voltage :VF(3) = 0.92 V(Typ.) • Fast Reverse Recovery Time :trr = 1.6 ns(Typ.) • Small Total Capacitance :CT = 2.2pF(Typ.)

SILICON EPITAXIAL PLANAR DIODE

Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application

SWITCHING DIODE

FEATURES Low forward voltage Fast reverse recovery time

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes FEATURES • Low forward voltage • Fast reverse recovery time

SURFACE MOUNT FAST SWITCHING DIODE

Dual Diode Common Anode Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

Surface mount switching diode

■ Features ● VR 80V ● IO 100mA ■ Applications ● High speed switching application ● Low forward voltage

Switching Diodes

Features ◇ Low forward voltage : VF(3)=0.92V(typ.) ◇ Fast reverse recovery time : trr=1.6ns(typ.)

SOT-23 Plastic-Encapsulate DIODE

Features Power dissipation PD : 150 mW (Tamb=25°C) Forward Current IF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range Tj, Tsta : -55°C to +150°C

Surface mount switching diode

FEATURES • Low forward voltage VF(3)=0.92V(typ). • Fast switching. • Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS • High speed switching application.

Switching DIODES

FEATURES • Low forward voltage : VF(3)=0.92V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

SWITCHING DIODES

Plastic-Encapsulate Diodes FEATURES • Low forward voltage : VF(3)=0.92V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

Silicon Epitaxial Planar Switching Diode

Plastic-Encapsulate Switching Diode

Features  Fast Switching Device (TRR

Ultra High Speed Switching

• Low forward voltage : VF(3) = 0.92V (typ.) • Fast reverse recovery time : trr = 1.6ns (typ.) • Small total capacitance : CT = 2.2pF (typ.) • We declare that the material of product compliance with RoHS requirements.

Switching Diodes

■ Features ● Low forward voltage. :VF(3)=0.92V(Typ.) ● Fast reverse recovery time :trr=1.6ns(Typ.) ● Small total capacitance :CT=2.2pF(Typ.)

Plastic-Encapsulate Diodes

FEATURES • Low forward voltage : VF(3)=0.92V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

Plastic-Encapsulate Diodes

SWITCHING DIODE Features: Low on-state voltage drop; Short reverse recovery time Applications: High-speed switching circuit.

Silicon Epitaxial Planar Switching Diode

Features • Low forward voltage • Fast reverse recovery time • Small total capacitance

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes Features ● Low forward voltage ● Fast reverse recovery time Applications ● Extreme fast switches

SOT-23 Plastic-Encapsulate Diodes

SWITCHING DIODE FEATURES • Power dissipation PD : 150 mW(Tamb=25℃) • Forward Current IF : 100 m A • Reverse Voltage VR: 80 V • Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

Switching Diode

FEATURES • Low forward voltage : VF(3)=0.92V(typ.) • Fast reverse recovery time : trr=1.6ns(typ.)

Plastic-Encapsulated Diodes

SWITCHING DIODE FEATURES • Power dissipation PD : 150 mW(Tamb=25℃) • Forward Current IF : 100 m A • Reverse Voltage VR: 80 V • Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Switching Diodes

FEATURES Low forward voltage Fast reverse recovery time

开关二极管

开关二极管

开关二极管

Silicon Epitaxial Planar Switching Diode

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SWITCHING DIODES ULTRA HIGH SPEED SWITCHING

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SOT-23 SWITCHING DIODE

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Ultra High Speed Switching Application

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SURFACE MOUNT FAST SWITCHING DIODE

Dual Diode Common Anode Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE ARRAY GP 80V 100MA SC59 分立半导体产品 二极管 - 整流器 - 阵列

Ultra High Speed Switching Application

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150mW High Speed Switching Diodes 80 Volt

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TOSHIBA Diode Silicon Epitaxial Planar Type

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SOT-23 Plastic-Encapsulate DIODE

文件：147.16 Kbytes Page：2 Pages

Switching Diodes

文件：1.93599 Mbytes Page：3 Pages

Ultra High Speed Switching Application

文件：182.64 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ARRAY GP 80V 100MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列