位置:首页 > IC中文资料第2199页 > 1SS
1SS价格
参考价格:¥0.9589
型号:1SS00-08.0 品牌:MEC 备注:这里有1SS多少钱,2024年最近7天走势,今日出价,今日竞价,1SS批发/采购报价,1SS行情走势销售排行榜,1SS报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SCHOTTKY BARRIER DIODE Features •Verylowforwardvoltage •Verylowreversecurrent •UltrasmallSMDpackage Applications •Ultrahigh-speedswitching •Voltageclamping •Protectioncircuits •Lowpowerconsumptionapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SILICON PLANAR TYPE DIODE 1SS104Diode *LowForwardVoltage:Vf=1.3V(Max.) *LowReverseCurrent=Ir=0.1nA(Typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SILICON SCHOTTKY BARRIER DIODE SILICONSCHOTTKYBARRIERDIODE forvariousdetector,highspeedswitching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal. | HitachiHitachi, Ltd. 日立公司 | |||
SMALL SIGNAL SCHOTTKY DIODES FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260°C/10seconds | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | |||
SMALL SIGNAL SCHOTTKY DIODES FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260℃/10secondsatt | GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司 | |||
SCHOTTKY BARRIER RECTIFIER DIODES Features ●Detectionefficiencyisverygood. ●Smalltemperaturecoefficient. ●Highreliabilitywithglassseal. | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SMALL SIGNAL SCHOTTKY DIODES FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260°C/10seconds | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | |||
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal. | HitachiHitachi, Ltd. 日立公司 | |||
SILICON SCHOTTKY BARRIER DIODE SILICONSCHOTTKYBARRIERDIODE forvariousdetector,highspeedswitching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
SILICON SCHOTTKY BARRIER DIODE Features ●Detectionefficiencyisverygood. ●Smalltemperaturecoefficient. ●Highreliabilitywithglassseal. | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Silicon Epitaxial Planar Diode for Tuner Band Switch Features •Lowforwardresistance.(rf=0.9Ωmax) •Suitablefor5mmpitchhighspeedautomaticalinsertion. •Smallglasspackage(MHD)enableseasymountingandhighreliability. | HitachiHitachi, Ltd. 日立公司 | |||
Switching Diode
| LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
SILICON EPITAXIAL PLANAR DIODES Features ●Lowforwardresistance.(rf=0.9Ωmax) ●Suitablefor5mmpitchhigh speedautomaticalinsertion. ●Smallglasspackage(MHD)enableseasy mountingandhighreliability. MechanicalData ●Case:DO-35,glasscase ●Polarity:Colorbanddenotescathode ●Weight:0.004ounc | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Highaverageforwardcurrent.(IO=200mA) •Highreliabilitywithglassseal. | HitachiHitachi, Ltd. 日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliabili | HitachiHitachi, Ltd. 日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliability. | HitachiHitachi, Ltd. 日立公司 | |||
Silicon Epitaxial Planar Diode for High Speed Switching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliability | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICON SWITCHING DIODE Features Lowcapacitance:Ct=4.0pFMAX Highspeedswitching:trr=9.0nsMAX. Wideapplicationsincludingswitching,limitter,clipper. Doublediodeconfigurationassureseconomicaluse. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICON SWITCHING DIODE Features Lowcapacitance:Ct=4.0pFMAX Highspeedswitching:trr=9.0nsMAX. Wideapplicationsincludingswitching,limitter,clipper. Doublediodeconfigurationassureseconomicaluse. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SILICON SWITCHING DIODE HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:SERIESCONNECTED MINIMOLD | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V | EIC EIC | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V •Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
130mA Axial Leaded High Speed Switching Diode Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V •Pb/RoHSFree | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Small Signal Switching Diodes REVERSEVOLTAGE:75V CURRENT:130mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | EIC EIC | |||
130mA Axial Leaded High Speed Switching Diode Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Small Signal Switching Diodes Features ◇Glasssealedenvelope.(MSD) ◇Highreliability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree | EIC EIC | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
120mA Axial Leaded High Speed Switching Diode Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Small Signal Switching Diodes REVERSEVOLTAGE:50V CURRENT:120mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SWITCHING DIODES
| LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
SMALL SIGNAL SWITCHING DIODE REVERSEVOLTAGE:35V CURRENT:110mA FEATURES ◇Glasssealedenvelope.(MSD) ◇Highreliability | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
HIGH SPEED SWITCHING DIODE Features •Glasssealedenvelope •Highspeed •Highreliability | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
Switching diode Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
High Speed Switching Diode Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •Glasssealedenvelope. •Highspeed.(trr=1.2nsTyp) •Highreliability. •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber •MoistureSensitivityLev | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Switching diode Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
High-speed swiching diode Features 1.Glasssealedenvelope. 2.Highreliability. 3.Highspeed. Applications Highspeedswitching Construction Siliconepitaxialplanar | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | EIC EIC | |||
Small Signal Switching Diodes REVERSEVOLTAGE:90V CURRENT:110mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
130mA Axial Leaded High Speed Switching Diode Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
SWITCHING DIODE Features ·Glasssealedenvelope ·Highspeed ·Highreliability Applications ·High-speedswitching | DAESAN Daesan Electronics Corp. | |||
130mA Axial Leaded High Speed Switching Diode Features *Highswichingspoed:max.4ns «Continuousreversevotaga:max,g0v «Repetiivepeakreverssvoltage:max,90V Pb/ROHSFree | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
Silicon Epitaxial Planar Switching Diode Features •Glasssealedenvelope •Highspeed •Highreliability Applications •High-speedswitching | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
300mW Hermetically Sealed Glass Switching Diode FEATURES -Fastswitchingdevice(trr | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
Switching diode Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Switching diode Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Switching diode Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
Small Signal Switching Diodes Features ◇Glasssealedenvelope.(MSD) ◇Highreliability | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
High Speed Switching Diode Features •MoistureSensitivityLevel1 •Highreliability. •Highspeed.(trr=2.0nsMax.) •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
200mA Axial Leaded High Speed Switching Diode Features •Highreliability. •Highspeed.(trr=2.0nsMax.) •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
1SS139 1SS140 1SS141 DIODE 1SS1391SS1401SS141DIODE | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
1SS139 1SS140 1SS141 DIODE 1SS1391SS1401SS141DIODE | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
SMALL SIGNAL SWITCHING DIODE FEATURES Siliconepitaxialplanardiode Highspeedswitchingdiode ThesediodesarealsoavailableinglasscaseDO-34 | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
1SS139 1SS140 1SS141 DIODE 1SS1391SS1401SS141DIODE | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | |||
0.1/0.2A Axial Leaded Small Signal Switching Diode Features ●Siliconepitaxialplanardiode ●Highspeedswitchingdiode ●ThesediodesarealsoavailableinglasscaseDO-34 | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Small Signal Switching Diodes Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34 | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |
1SS产品属性
- 类型
描述
- 型号
1SS
- 制造商
JUBILEE
- 功能描述
HOSE CLIP 304 S/S 25-35MM PK10
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI |
08+ |
LL34 |
12500 |
||||
MEC |
2308+ |
502004 |
一级代理,原装正品,公司现货! |
||||
LRC |
23+ |
DO-34GLASS |
7007 |
专注配单,只做原装进口现货 |
|||
LRC |
22+ |
DO-34GLASS |
7007 |
原装现货 |
|||
MULTIMEC |
2021+ |
532203 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
23+ |
N/A |
65700 |
一级代理放心采购 |
||||
ST |
23+ |
SOD-523 |
16900 |
正规渠道,只有原装! |
|||
MEC Switches |
23+ |
6000 |
诚信服务,绝对原装原盘 |
||||
ST |
22+ |
SOD-523 |
16900 |
支持样品 原装现货 提供技术支持! |
|||
LRC |
23+ |
DO-34GLASS |
7007 |
专注配单,只做原装进口现货 |
1SS规格书下载地址
1SS参数引脚图相关
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1SS181,LF(T
- 1SS181,LF
- 1SS181
- 1SS154
- 1SS153
- 1SS141
- 1SS140
- 1SS139
- 1SS136
- 1SS135
- 1SS134
- 1SS133M
- 1SS133
- 1SS132
- 1SS131
- 1SS130
- 1SS123
- 1SS120
- 1SS119
- 1SS118
- 1SS110
- 1SS108
- 1SS106
- 1SS104
- 1SS101
- 1SS09-22.5
- 1SS09-19.0
- 1SS09-16.0
- 1SS09-12.0
- 1SS09-10.4
- 1SS09-09.5
- 1SS09-08.0
- 1SS08-15.0
- 1SS08-08.0
- 1SS06-12.0
- 1SS03-10.4
- 1SS02-09.5
- 1SS02-08.0
- 1SS00-08.0
- 1SRED
- 1SR159-400
- 1SR159-200
- 1SR156-400TE25
- 1SR156-400
- 1SR154-600TE25
- 1SR154-600
- 1SR154-400TE25A
- 1SR154-400TE25
- 1SR154-400
- 1SR154-200
- 1SQ-25-GM400
- 1SQ-25-GM110
- 1SPP-BT-F
- 1SP0635V2M1-33
- 1SP0635V2M1-17
- 1SP0635V2M1-12
- 1SNK916303R0000
- 1SNK916302R0000
- 1SNK910310R0000
- 1SMC90A
- 1SMC90
- 1SMC9.0
- 1SMC85A
- 1SMC85
- 1SMC8.5
- 1SMC8.0
- 1SMC78A
- 1SMC78
- 1SMC75A
- 1SMC75
- 1SMC70A
- 1SMC70
- 1SMC7.5
- 1SMC7.0
- 1SMC64A
- 1SMC64
- 1SMC60A
- 1SMC60
- 1SMC6.5
1SS数据表相关新闻
1SNK708410R0000保险丝端子块
TE的端子块通过弹簧模式减少工作量并缩短导线准备时间
2024-2-231SS133M R0G
1SS133MR0G
2023-3-201SMB5947BT3G
属性参数值 商品目录稳压二极管 精度±5%_ 反向电流(Ir)1μA62.2V 功率3W 稳压值(标称值)82V
2021-10-121SS302
1SS302
2021-6-221SMB5955BT3G,1SMB6.0AT3G,1SMC20AT3,2N3771G,2N5302G,2N7000RLRAG
1SMB5955BT3G,1SMB6.0AT3G,1SMC20AT3,2N3771G,2N5302G,2N7000RLRAG
2020-3-101SS400开关二极管原装现货供应
1SS400开关二极管
2019-11-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80