1SS价格

参考价格:¥0.9589

型号:1SS00-08.0 品牌:MEC 备注:这里有1SS多少钱,2024年最近7天走势,今日出价,今日竞价,1SS批发/采购报价,1SS行情走势销售排行榜,1SS报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SCHOTTKY BARRIER DIODE

Features •Verylowforwardvoltage •Verylowreversecurrent •UltrasmallSMDpackage Applications •Ultrahigh-speedswitching •Voltageclamping •Protectioncircuits •Lowpowerconsumptionapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

SILICON PLANAR TYPE DIODE

1SS104Diode *LowForwardVoltage:Vf=1.3V(Max.) *LowReverseCurrent=Ir=0.1nA(Typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SILICON SCHOTTKY BARRIER DIODE

SILICONSCHOTTKYBARRIERDIODE forvariousdetector,highspeedswitching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SMALL SIGNAL SCHOTTKY DIODES

FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260°C/10seconds

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

SMALL SIGNAL SCHOTTKY DIODES

FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260℃/10secondsatt

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合明辉电子山东星合明辉电子有限公司

GXELECTRONICS

SCHOTTKY BARRIER RECTIFIER DIODES

Features ●Detectionefficiencyisverygood. ●Smalltemperaturecoefficient. ●Highreliabilitywithglassseal.

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SMALL SIGNAL SCHOTTKY DIODES

FEATURES •Detectioneffciencyisverygood •Smalltemperaturecoefficient •Highreliabilitywithglassseal •ForuseinRECORDER,TV,RADIO,TELEPHONEasdetectors, superhighspeedswitchingcircuitssmallcurrentrectifier •Hightemperaturesolderingguaranteed:260°C/10seconds

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

SILICON SCHOTTKY BARRIER DIODE

SILICONSCHOTTKYBARRIERDIODE forvariousdetector,highspeedswitching Features •Detectionefficiencyisverygood. •Smalltemperaturecoefficient. •Highreliabilitywithglassseal.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

SILICON SCHOTTKY BARRIER DIODE

Features ●Detectionefficiencyisverygood. ●Smalltemperaturecoefficient. ●Highreliabilitywithglassseal.

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Silicon Epitaxial Planar Diode for Tuner Band Switch

Features •Lowforwardresistance.(rf=0.9Ωmax) •Suitablefor5mmpitchhighspeedautomaticalinsertion. •Smallglasspackage(MHD)enableseasymountingandhighreliability.

HitachiHitachi, Ltd.

日立公司

Hitachi

Switching Diode

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

SILICON EPITAXIAL PLANAR DIODES

Features ●Lowforwardresistance.(rf=0.9Ωmax) ●Suitablefor5mmpitchhigh speedautomaticalinsertion. ●Smallglasspackage(MHD)enableseasy mountingandhighreliability. MechanicalData ●Case:DO-35,glasscase ●Polarity:Colorbanddenotescathode ●Weight:0.004ounc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Highaverageforwardcurrent.(IO=200mA) •Highreliabilitywithglassseal.

HitachiHitachi, Ltd.

日立公司

Hitachi

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliabili

HitachiHitachi, Ltd.

日立公司

Hitachi

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliability.

HitachiHitachi, Ltd.

日立公司

Hitachi

Silicon Epitaxial Planar Diode for High Speed Switching

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=3.5nsmax) •Smallglasspackage(MHD)enableseasymountingandhighreliability

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICON SWITCHING DIODE

Features Lowcapacitance:Ct=4.0pFMAX Highspeedswitching:trr=9.0nsMAX. Wideapplicationsincludingswitching,limitter,clipper. Doublediodeconfigurationassureseconomicaluse.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICON SWITCHING DIODE

Features Lowcapacitance:Ct=4.0pFMAX Highspeedswitching:trr=9.0nsMAX. Wideapplicationsincludingswitching,limitter,clipper. Doublediodeconfigurationassureseconomicaluse.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SILICON SWITCHING DIODE

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:SERIESCONNECTED MINIMOLD

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V

EIC

EIC

EIC

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

130mA Axial Leaded High Speed Switching Diode

Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.100V •Pb/RoHSFree

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Small Signal Switching Diodes

REVERSEVOLTAGE:75V CURRENT:130mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

EIC

EIC

EIC

130mA Axial Leaded High Speed Switching Diode

Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Small Signal Switching Diodes

Features ◇Glasssealedenvelope.(MSD) ◇Highreliability

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree

EIC

EIC

EIC

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

120mA Axial Leaded High Speed Switching Diode

Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.50V •Repetitivepeakreversevoltage:max.55V •Pb/RoHSFree

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Small Signal Switching Diodes

REVERSEVOLTAGE:50V CURRENT:120mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SWITCHING DIODES

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

SMALL SIGNAL SWITCHING DIODE

REVERSEVOLTAGE:35V CURRENT:110mA FEATURES ◇Glasssealedenvelope.(MSD) ◇Highreliability

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

HIGH SPEED SWITCHING DIODE

Features •Glasssealedenvelope •Highspeed •Highreliability

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

SYNSEMI

Switching diode

Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

High Speed Switching Diode

Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •Glasssealedenvelope. •Highspeed.(trr=1.2nsTyp) •Highreliability. •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber •MoistureSensitivityLev

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Switching diode

Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

High-speed swiching diode

Features 1.Glasssealedenvelope. 2.Highreliability. 3.Highspeed. Applications Highspeedswitching Construction Siliconepitaxialplanar

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

HIGH SPEED SWITCHING DIODE

FEATURES: •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

EIC

EIC

EIC

Small Signal Switching Diodes

REVERSEVOLTAGE:90V CURRENT:110mA Features ◇Glasssealedenvelope.(MSD) ◇Highreliability

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

130mA Axial Leaded High Speed Switching Diode

Features •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.80V •Repetitivepeakreversevoltage:max.90V •Pb/RoHSFree

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

SWITCHING DIODE

Features ·Glasssealedenvelope ·Highspeed ·Highreliability Applications ·High-speedswitching

DAESAN

Daesan Electronics Corp.

DAESAN

130mA Axial Leaded High Speed Switching Diode

Features *Highswichingspoed:max.4ns «Continuousreversevotaga:max,g0v «Repetiivepeakreverssvoltage:max,90V Pb/ROHSFree

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Silicon Epitaxial Planar Switching Diode

Features •Glasssealedenvelope •Highspeed •Highreliability Applications •High-speedswitching

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

300mW Hermetically Sealed Glass Switching Diode

FEATURES -Fastswitchingdevice(trr

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

Switching diode

Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Switching diode

Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Switching diode

Features 1)Glasssealedenvelope.(MSD) 2)Highspeed.(trr=1.2nsTyp.) 3)Highreliability. Applications Highspeedswitching Construction Siliconepitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Small Signal Switching Diodes

Features ◇Glasssealedenvelope.(MSD) ◇Highreliability

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

High Speed Switching Diode

Features •MoistureSensitivityLevel1 •Highreliability. •Highspeed.(trr=2.0nsMax.) •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

200mA Axial Leaded High Speed Switching Diode

Features •Highreliability. •Highspeed.(trr=2.0nsMax.) •Siliconepitaxialplanar •Marking:Cathodebandandtypenumber

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

1SS139 1SS140 1SS141 DIODE

1SS1391SS1401SS141DIODE

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

1SS139 1SS140 1SS141 DIODE

1SS1391SS1401SS141DIODE

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SMALL SIGNAL SWITCHING DIODE

FEATURES Siliconepitaxialplanardiode Highspeedswitchingdiode ThesediodesarealsoavailableinglasscaseDO-34

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

1SS139 1SS140 1SS141 DIODE

1SS1391SS1401SS141DIODE

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

0.1/0.2A Axial Leaded Small Signal Switching Diode

Features ●Siliconepitaxialplanardiode ●Highspeedswitchingdiode ●ThesediodesarealsoavailableinglasscaseDO-34

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Small Signal Switching Diodes

Features ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇ThesediodesarealsoavailableinglasscaseDO-34

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

1SS产品属性

  • 类型

    描述

  • 型号

    1SS

  • 制造商

    JUBILEE

  • 功能描述

    HOSE CLIP 304 S/S 25-35MM PK10

更新时间:2024-6-23 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
08+
LL34
12500
MEC
2308+
502004
一级代理,原装正品,公司现货!
LRC
23+
DO-34GLASS
7007
专注配单,只做原装进口现货
LRC
22+
DO-34GLASS
7007
原装现货
MULTIMEC
2021+
532203
原厂授权代理,海外优势订货渠道。可提供大量库存,详
23+
N/A
65700
一级代理放心采购
ST
23+
SOD-523
16900
正规渠道,只有原装!
MEC Switches
23+
6000
诚信服务,绝对原装原盘
ST
22+
SOD-523
16900
支持样品 原装现货 提供技术支持!
LRC
23+
DO-34GLASS
7007
专注配单,只做原装进口现货

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