SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 60 Volts IO: 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Low leakge * Pb / RoHS Free

1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · Metal silicon junction, majority carrier conduction

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 100 V CURRENT: 1.0 A FEATURES ◇ Low switcing noise ◇ Low forward voltage drop ◇ High current capability ◇ High switching capability ◇ High surge capability ◇ High reliability

1.0Amp Schottky Barrier Rectifier

Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · Metal silicon junction, majority carrier conduction

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · For use in low volt

SCHOTTKY BARRIER RECTIFIER

FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability ● High temperature soldering guaranteed: 250oC/10 seco

SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere

FEATURES * Low power loss, high efficiency * Low leakage * Low forward voltage * High current capability * High speed switching * High surge capabitity * High reliability

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage drop •

VOLTAGE 20V ~ 60V 1.0AMP Schottky Barrier Rectifiers

FEATURES *Low forward voltage drop *High current capability *High reliability *High surge current capability *Epitaxial construction

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High fo

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

1.0 AMP. SCHOTTKY BARRIER RECTIFIERS

Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free

Schottky Barrier Rectifier

Features ● Guardring for overvoltage protection ● Very small conduction losses ● Extremely fast switching ● High forward surge capability ● High frequency operation ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in low voltage high frequency inverters, free

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forwar

SCHOTTKY BARRIER RECTIFIER

FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

肖特基二极管

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

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MINIATURE SCHOTTKY BARRIER RECTIFIER

文件：270.37 Kbytes Page：3 Pages

SCHOTTKY BARRIER RECTIFIER

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SCHOTTKY BARRIER RECTIFIER

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1.0A Axial Leaded Schottky Barrier Rectifier

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1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts

文件：448.02 Kbytes Page：4 Pages

SCHOTTKY BARRIER RECTIFIER

文件：27 Kbytes Page：2 Pages

丝印代码：1S30N06L；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

丝印代码：1S30N06L；30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were

丝印代码：1S30N06L；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

丝印代码：1S30N06L；30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Silicon N-Channel Power MOSFET

丝印代码：D2PAK；N-Channel 60 V (D-S) MOSFET

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Stratix Device Family Data Sheet

This datasheet describes configuration devices for SRAM-based look-up table (LUT) devices. Features Configuration devices for SRAM-based LUT devices offer the following features: ■ Configures Altera ACEX 1K, APEX 20K (including APEX 20K, APEX 20KC, and APEX 20KE), APEX II, Arria GX,

Low Power-Loss Voltage Regulator

Low Output Current, Compact Surface Mount Type Low Power-Loss Voltage Regulators ■ General Description Sharps PQ1S30 series are 180mA output, compact resin mold surface mount package type low power-loss voltage regulators. They contribute to improve the performance of analog circuit due to high

SineWave (VC) TCXO Oscillator

文件：70.18 Kbytes Page：1 Pages