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1S2价格

参考价格：￥4.5985

型号：1S26 品牌：Sargent Tools 备注：这里有1S2多少钱，2025年最近7天走势，今日出价，今日竞价，1S2批发/采购报价，1S2行情走势销售排行榜，1S2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1S2

1AMPERESCHOTTKYBARRIERRECTIFIERS(VOLTAGE-20to100VoltsCURRENT-1.0Ampere)

SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to100VoltsCURRENT1.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •For

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1S2

TECHNICALSPECIFICTIONSOFSCHOTTKYBARRIERRECTIFIER

TECHNICALSPECIFICTIONSOFSCHOTTKYBARRIERRECTIFIER VOLTAGERANGE-20to100VoltsCURRENT-1.0Ampere

DCCOM

Dc Components

DCCOM
1S2

SuperFastRectifiers

Features Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability TJis150oC(Max.)andTSTGis175oC(Max.)withPIglue

Good-Ark

GOOD-ARK Electronics

Good-Ark
1S2

SCHOTTKYBARRIERRECTIFIERS

文件：122.73 Kbytes Page：2 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1S2

SCHOTTKYBARRIERRECTIFIERS

文件：59.63 Kbytes Page：2 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1S2

1.0AMP.SchottkyBarrierRectifiers

文件：792.9 Kbytes Page：2 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
1S2

SuperFastRecoveryRectifier

文件：209.65 Kbytes Page：4 Pages

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1S20

SCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to100VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

RECTRON

Rectron Semiconductor

RECTRON
1S20

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-Semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
1S20

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
1S20

VOLTAGERANGE20to60VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

WILLAS
1S20

SCHOTTKYBARRIERRECTIFIER

SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100VoltsForwardCurrent-1.0Ampere FEATURES TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwar

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

CHENDA
1S20

SchottkyBarrierRectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1S20

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
1S20

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-60Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowforwardvoltagedrop *Lowleakge *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC
1S20

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

UNIOHMUniohm

台湾厚声

UNIOHM
1S20

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1S20

VOLTAGE20V~60V1.0AMPSchottkyBarrierRectifiers

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
1S20

1.0AmpSchottkyBarrierRectifier

Features ·PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Metalsiliconjunction,majoritycarrierconduction

CHENYIShanghai Lunsure Electronic Tech

商朗电子上海商朗电子科技有限公司

CHENYI
1S20

SCHOTTKYBARRIERRECTIFIER

SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to100VoltsForwardCurrent-1.0Ampere FEATURES TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highfo

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
1S20

SCHOTTKYBARRIERRECTIFIER

FEATURES ●TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed:250oC/10seco

DIOTECH

Diotech Company.

DIOTECH
1S20

CURRENT1.0AmpereVOLTAGE20to40Volts

Features ·PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ·Metalsiliconjunction,majoritycarrierconduction ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Foruseinlowvolt

DAESAN

Daesan Electronics Corp.

DAESAN
1S20

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1S20

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---100V CURRENT:1.0A FEATURES ◇Lowswitcingnoise ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highswitchingcapability ◇Highsurgecapability ◇Highreliability

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
1S20

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to100Volts CURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1S20

1.0AmpSchottkyBarrierRectifier20to100Volts

Features ·PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ·Lowpowerloss,highefficiency ·Highcurrentcapability,Lowforwardvoltagedrop ·Highsurgecapability ·Metalsiliconjunction,majoritycarrierconduction

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
1S20_V01

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
1S20_V01

SCHOTTKYBARRIERRECTIFIERVOLTAGERANGE20to100VoltsCURRENT1.0Ampere

FEATURES *Lowpowerloss,highefficiency *Lowleakage *Lowforwardvoltage *Highcurrentcapability *Highspeedswitching *Highsurgecapabitity *Highreliability

RECTRON

Rectron Semiconductor

RECTRON
1S200

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1S200

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to200VoltsForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
1S200

SchottkyBarrierRectifier

Features ●Guardringforovervoltageprotection ●Verysmallconductionlosses ●Extremelyfastswitching ●Highforwardsurgecapability ●Highfrequencyoperation ●Solderdip275°Cmax.7s,perJESD22-B106 TypicalApplications Foruseinlowvoltagehighfrequencyinverters,free

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1S200

SCHOTTKYBARRIERRECTIFIER

FEATURES PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highcurrentcapability,Lowforwardvoltagedrop Highsurgecapability Foruseinlowvoltage,highfrequencyinverters

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三阳电子三阳电子有限公司

SAMYANG
1S2074

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

Hitachi
1S2074H

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=4.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

Hitachi
1S2075

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

Hitachi
1S2075K

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching

SiliconEpitaxialPlanarDiodeforHighSpeedSwitching Features •Lowcapacitance.(C=3.5pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

Hitachi
1S2076A

SiliconEpitaxialPlanarDiodeforVariousDetector,Modulator,Demodulator

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

HitachiHitachi Semiconductor

日立日立公司

Hitachi
1S2076A

Highreliabilitywithglassseal.

Features •Lowcapacitance.(C=3.0pFmax) •Shortreverserecoverytime.(trr=8.0nsmax) •Highreliabilitywithglassseal.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
1S2076A

HIGHSPEEDSWITCHINGDIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree MECHANICALDATA: *Case:DO-35GlassCase *Lead:AxialleadsolderableperMIL

SYNSEMI

SynSemi，Inc.

SYNSEMI
1S2076A

HIGHSPEEDSWITCHINGDIODE

PRV:70Volts Io:150mA FEATURES: *SiliconEpitaxialPlanarDiode *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highspeedswitching *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC
1S2076A

SMALLSIGNALSWITCHINGDIODE

REVERSEVOLTAGE:60V CURRENT:0.15A FEATURES Siliconepitaxialplanardiode Highspeedswitchingdiode 500mWpowerdissipation Weight:0.004ounces,0.13grams MECHANICALDATA Case:DO-35,glasscase Polarity:Colorbanddenotescathode

KISEMICONDUCTOR

Kwang Myoung I.S. CO.,LTD

KISEMICONDUCTOR
1S2092

SILICONEPTAXIALPLANARTYPE

SiliconEptaxialPlanarTypeDiode GENERALPURPOSEDETECTORANDRECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2093

SILICONPLANARTYPETRIGGERDIODE

SiliconPlanarTypeTriggerDiode THYRISTOR,TRIACTRIGGERAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2094

VARIABLECAPACITANCEDIODE

SiliconEpitaxialPlanarType VARIABLECAPACITANCEDIODE UHF,VHFAFCAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2095A

SILICONEPITAXIALPLANARTYPEDIODE

ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS. COREDRIVEAPPLICATIONS.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2207

VARACTORDIODE

DESCRIPTIONThe152207(8B)iahyper-abruptunctiontypsvoltage: varisblecapacitancediode. Itisdesignedforlectronictuningcicuitapplicationsin VHEandUHFbandsandfeatureshighO,highcapaci- tanceratioandhighreliability. FEATURES -HighQ. -Highcapacitanceratio. -L

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
1S2208

SILICONVARACTORDIODES

DESCRIPTIONThe152208(8)and152200(B)areahyper-abruptjunction typevoltage-variablecapacitancediodes. ‘The152208(8)and15220(8)aredesignedforelectronic tuningcircuitapplicationinUHFandVHF. FEATURES -Lowseriesresistance.0,352TYP. -Highcapacitanceratio, -Lowle

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
1S2236

SILICONEPITAXIALPLANARTYPEVARIABLECAPACITANCEDIODE

AFCAPPLICATIONFORFMRECEIVER. FEATURES: •HighQ:Q=70(Min.)(f=50MHz) •LowReverseCurrent:IR=100nA(Max.)(VR=4V)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2460

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2461

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2462

GENERALPURPOSERECTIFIERAPPLICATIONS.

GENERALPURPOSERECTIFIERAPPLICATIONS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
1S2638

TUNERAFCDIODE

TUNERAFCDIODE

SEMTECH

Semtech Corporation

SEMTECH
1S2638

TUNERAFCDIODE

TUNERAFCDIODE The1S2638isavariablecapacitordiodeintendedforAFCapplications,VHFTVapplications,FMreceivers.Aircraftcommunicationsgear,andotherreceiversinthe1MHzto500MHz. StandardpackageisDO-35case,DO-34caseisavailableuponrequest.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1S2638

VARIABLECAPACITANCEDIODESILICONTYPE

Features •Excellentlinearity •Lowseriesresistance:rs≤0.8Ω •package:SOD-323 Application •FrequencymodulationinFMRadio •FMandAFCincommunicationset

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
1S2835

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONANODE MINIMOLD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
1S2837

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONCATHODE MINIMOLD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
1S2838

SILICONSWITCHINGDIODES

HIGHSPEEDSWITCHING SILICONEPITAXIALDOUBLEDIODES:COMMONCATHODE MINIMOLD

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
1S2G

GlassPassivatedSuperFastRectifiers

Features Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability

Good-Ark

GOOD-ARK Electronics

Good-Ark
1S2H

SCHOTTKYBARRIERRECTIFIERS

FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotec

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1S2075

SILICONEPITAXIALPLANARDIODE

文件：309.16 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳市福田区吉富昌电子商行

SUNMATE

1S2产品属性

  • 类型

    描述

  • 型号

    1S2

  • 制造商

    MAGNUM/COOPER

  • 制造商

    Magnum/Cooper

1S2供应商更多...

更新时间：2025-5-14 11:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
1S2076A
Renesas(瑞萨)
24+
标准封装
7208
支持大陆交货,美金交易。原装现货库存。
询价
深圳市宇创芯科技有限公司
1S2838-T1B-A
NEC
24+
SOT23
9600
原装现货,优势供应,支持实单!
询价
深圳市毅创弘电子科技有限公司
1S24-460B
ADI/亚德诺
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源！
询价
贸泽芯城（深圳）电子科技有限公司
1S295
TOSHIBA/东芝
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市仟禧电子有限公司
1S2835-T1B贴片三极管
NEC
22+
SOT-23
20000
保证原装正品,假一陪十
询价
深圳宇航军工半导体有限公司
1S2638DO-35
HITACHI
19+
DO-35
58773
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
现代芯城（深圳）科技有限公司
1S2638PF
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市近平电子有限公司
1S2638
RENESAS
13
DO-35
6000
绝对原装自己现货
询价
深圳市坤融电子科技有限公司
1S2835-T1B
NEC
24+
SOT23
8950
BOM配单专家,发货快,价格低
询价
深圳市勤思达科技有限公司
1S2638
RENESAS
1215+
DO-35
150000
全新原装,绝对正品,公司大量现货供应.
询价

1S2芯片相关品牌

  • AIMTEC
  • ANPEC
  • BELDEN
  • BURR-BROWN
  • CYSTEKEC
  • Dialight
  • HONGFA
  • JDSU
  • Rubycon
  • SANYOU
  • SENSORTECHNICS
  • XTAITQ

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