High-speed diode

DESCRIPTION The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • Continuous reverse voltage

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34

SMALL SIGNAL DIODE

FEATURES ♦ Silicon Epitaxial Planar Diode ♦ For general purpose and switching.

SILICON EPITAXIAL PLANAR DIODES

Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

COMPUTER DIODE Switching

500mW 100 Volt Silicon Epitaxial Diodes

Features • Moisture Sensitivity Level 1 • Low Current Leakage • Compression Bond Construction • Low Cost • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information)

PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

FAST SWITCHING DIODE

Features ● Fast Switching Speed ● High Reliability ● High Conductance ● For General Purpose Switching Applications

Switching Diode - Silicon epitaxial planar type

Features ● Low power loss, high efficiency ● High reliability ● High speed ( trr

silicon diode

SILICON DIODE

250 mW EPITAXIAL PLANAR DIODES

Features ■ PLANAR PROCESS ■ 250 mW POWER DISSIPATION ■ INDUSTRY STANDARD D0-35 PACKAGE ■ MEETS UL SPECIFICATION 94V-0

FAST SWITCHING DIODE

FEATURES ● High reliability ● High conductance ● Fast switching speed (trr≤4ns) APPLICATIONS ● For general purpose swiching applications

SMALL SIGNAL SWITCHING DIODE

REVERSE VOLTAGE: 75 V CURRENT： 75 mA FEATURES ◇ Glass sealed envelope. (MSD) ◇ VRM=100V guaranteed ◇ High reliability

Switching Diode

Features • Fast switching speed • Electrically indentical to standard JEDEC • High Conductance • Axial lead package ideally suited for automatic insertion

FAST SWITCHING DIODES

Features • Fast Switching Speed • High Reliability

Fast Switching Diodes

FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applications • AEC-Q101 qualified • Material categorization:    For definitions of compliance please see www.vishay.com/doc?99912

SWITCHING DIODES

VOLTAGE 100 Volts POWER 500 mWatts FEATURES • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance • Axial lead Package ldeally Suited for Automatic lnsertion. • In compliance with EU RoHS 2002/95/EC directives

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Repetitive peak forward current: max. 225 mA • Pb / RoHS Free

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Repetitive peak forward current: max. 225 mA • Pb / RoHS Free

SILICON EPITAXIAL PLANAR DIODE

Silicon Expitxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also avaible in glass case DO-34

Small Signal Diode

Small Signal Diode

Fast switching diode

Features 1. High reliability 2. High conductance 3. Fast switching speed (trr≤4 ns) Applications For general purpose switching applications

75mA Axial Leaded High Speed Switching Diodes

Features ● Repetitive peak forward current: max. 225 mA ● Repetitive peak reverse voltage:max. 100 V ● Continuous reverse voltage:max. 75 V ● High switching speed: max. 4 ns

HIGH SPEED SILICON SWITCHING DIODE

FEATURES Intended for General Purpose Application.

SILICON EPITAXIAL PLANAR DIODE

FEATURES ● FAST SWITCHING ● SMALL BODY

Silicon switching diode

Small Signal Fast Switching Diodes

FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applications • AEC-Q101 qualified • Material categorization:    For definitions of compliance please see www.vishay.com/doc?99912

SWITCHING RECTIFIERS

SWITCHING RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Silicon Epitaxial Planar Switching Diode

Features • Fast switching speed • High reliability

SMALL SIGNAL SWITCHING DIODE

FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ These diodes are also available in glass case DO-34

FAST SWITCHING DIODE

Features: • Fast Switching Speed • Glass Package Version for High Reliability • High Conductance • Available in Both Through-Hole and Surface Mount Versions • This is a Pb − Free Device • All SMC parts are traceable to the wafer lot • Additional testing can be offered upon request

Silicon Switching Diode

Features ● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 ● Metallurgically Bonded ● Hermetically Sealed ● Double Plug Construction

Small Signal Switching Diodes

REVERSE VOLTAGE: 75 V CURRENT： 75 mA Features ◇ Glass sealed envelope. (MSD) ◇ VRM=100V guaranteed ◇ High reliability

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

FAST SWITCHING DIODE

HIGH CONDUCTANCE ULTRA FAST SWITCHES DIFFUSED SILICON PLANAR DIODES • trr ... 4.0 ns (MAX) • BV ... 100 V (MIN)

Small Signal Fast Switching Diodes

FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band co

100V Detection switch tube

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SMALL SIGNAL SWITCHING DIODES

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Small Signal Diode

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500mW 100 Volt Silicon Epitaxial Diodes

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Fast Switching Diodes

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封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT） 描述：DIODE GEN PURP 75V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单

SWITCHING DIODE

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SWITCHING DIODE

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Diode Data

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SWITCHING DIODE

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SILICON SWITCHING DIODES

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Small Signal Diode

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开关二极管

小信号开关二极管

Signal or Computer Diode

Silicon Epitaxial Planar Switching Diode

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封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 100V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单

Small Signal Diode

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Small Signal Fast Switching Diodes

FEATURES • Fast switching speed • High reliability • High conductance • For general purpose switching applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band co

PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

Silicon Switching Diode DO-35 Glass Package

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.