位置：首页 > IC中文资料第6672页 > 1N821TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N821TR | 6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 文件：238.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 |   | |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 文件：238.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 文件：238.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 文件：238.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 文件：238.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Voltage reference diodes DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. FEATURES • Temperature compensated • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 /K. APPLICATION • Voltage reference sources in measur | PHILIPS 飞利浦 | | ||
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 4 | MOTOROLA 摩托罗拉 | | ||
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 4 | MOTOROLA 摩托罗拉 | | ||
Voltage reference diodes DESCRIPTION Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. FEATURES • Temperature compensated • Reference voltage range: 5.89 to 6.51 V (typ. 6.20 V) • Low temperature coefficient range: max. 0.0005 to 0.01 /K. APPLICATION • Voltage reference sources in measur | PHILIPS 飞利浦 | | ||
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed structure. TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 4 | MOTOROLA 摩托罗拉 | |
1N821TR产品属性
- 类型
描述
- 型号
1N821TR
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N821TR规格书下载地址
1N821TR参数引脚图相关
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1N821TR数据表相关新闻
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