GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Si Schottky Rectifier Diodes

\"This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace and defense applications requiring high density power and excellent heat dissipation (typically 0.85- 0.95 degrees C per Watt (C/W)).  The 1N6910UTK2AS through 1N6912UTK2AS device polarity is anode-to-str

Silicon Schottky Diode 15V, 25A Thinkey 2

This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace and defense applications requiring high density power and excellent heat dissipation (typically 0.85 - 0.95 degrees C per Watt (C/W)). The 1N6910UTK2AS through 1N6912UTK2AS device polarity is anode-to-strap JEDEC registered 1N6910 – 1N6912 number series\n Oxide passivated structure\n Guard ring protection for increased reverse energy capability\n Epitaxial structure minimizes forward voltage drop\n Hermetically sealed, low profile ceramic surface mount power package\n JAN, JANTX, and JANTXV qualificati;

Silicon Schottky Diode 30V, 25A Thinkey 2

This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace and defense applications requiring high density power and excellent heat dissipation (typically 0.85 - 0.95 degrees C per Watt (C/W)). The 1N6910UTK2AS through 1N6912UTK2AS device polarity is anode-to-strap JEDEC registered 1N6910 – 1N6912 number series\n Oxide passivated structure\n Guard ring protection for increased reverse energy capability\n Epitaxial structure minimizes forward voltage drop\n Hermetically sealed, low profile ceramic surface mount power package\n JAN, JANTX, and JANTXV qualificati;

40V 10mA Schottky Diode

Features  Ultra-low leakage current  Low forward voltage  40V br eakdown voltage  Guard-ring for over-voltage protection  High reliability tested grades & matched characteristic options.

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

GERMANIUM DIODES

Gold Bonded Germanium Diodes in DO-7 Package

GOLD BONDED DIODES

Gold Bonded Germanium Diodes in DO-7 Package

JEDEC DO-7 PACKAGE

JEDEC DO-7 PACKAGE

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

封装/外壳：ThinKey™2 包装：散装 描述：POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

包装：散装 描述：DIODE SCHOTTKY 15V 25A 2-THINKEY 分立半导体产品 二极管 - 整流器 - 单

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