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型号 功能描述 生产厂家&企业 LOGO 操作
1N5939B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE(VOLTAGE-11TO200VoltsPower-1.5Watts)

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5939B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODE

TRSYS

Transys Electronics

TRSYS
1N5939B

1.5WSILICONZENERDIODE

VOLTAGERANGE3.3to200Volts FEATURES *Zenervoltage3.3Vto200V *Withstandslargesurgestresses

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5939B

1.5WattZenerDiode11to200Volts

Features •GlassPassivatedJunction •LowProfilePackage •LowInductance •Built-inStrainRelief

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
1N5939B

SILICON1.5WATTZENERDIODES

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939B

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939B

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913BG-5956BGseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithavarietyoftolerancesavailable.Theyarealsoavailableinvariousmilitaryequivalentscreeninglevelsforhighreliability.TheseglassencapsulatedZenerswithaG

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939B

1.5WattZENERDIODES(3.3Vto200V)

Features ■5&10VOLTAGETOLERANCESAVAILABLE ■WIDEVOLTAGERANGE ■MEETSULSPECIFICATION94V-0

FCIFirst Components International

戈采戈采企业股份有限公司

FCI
1N5939B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5939B

3WSILICONZENERDIODES

3WSILICONZENERDIODES

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技（东莞）有限公司

SEMTECH_ELEC
1N5939B

1.5WZenerDiodes

Features •LowProfilePackage •1.5WPowerDissipation •Built-inStrainRelief •LowInductance •HighStability •ZenerVoltagefrom3.3Vto56V •RoHSCompliant

TAITRON

TAITRON Components Incorporated

TAITRON
1N5939B

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

EIC

EIC discrete Semiconductors

EIC
1N5939B

SILICONZENERDIODES

VOLTAGE3.3to200VoltsPOWER1.5Watts FEATURES •Lowprofilepackage •Built-instrainrelief •Lowinductance •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Pbfreeproductareavailable:99SncanmeetRoHSenvironmentsubstancedirectiverequest

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5939B

SILICONZENERDIODE1.5WATT,3.3THRU200VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTOR1N5913BseriessiliconZenerdiodeisahighqualityvoltageregulatordesignedforuseinautomotive,industrial,commercial,entertainmentandcomputerapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
1N5939B

SILICONZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5939B

1.5WattsAxialLeadedZenerDiodes

Features ●CompleteVoltageRange3.3to200Volts ●Highreliability ●Highpeakreversepowerdissipation ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
1N5939B

Axial-Leaded1.5Wattdiodes

Axial-Leaded1.5Wattdiodes

AMMSEMIAmerican Microsemiconductor

美国微半导体有限公司

AMMSEMI
1N5939B

1.5WATTSILICONZENERDIODE

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY MECHANICALDATA ●CASE:MOLDEDPLASTIC,DO41,DIMENSIONSININCHESAND(MILLIMETERS) ●TERMINALS:AXIALLEADSSOLDERABLEPERMIL-STD-20

FRONTIER

Frontier Electronics

FRONTIER
1N5939B

ZenerDiode

■Feature ●Pt1.5W ●Vz3.3V-240V Notes: 1.ZenerTolerance:±5. 2.Thezenerimpedanceisderivedfromthe60-cycleacvoltage,whichresultswhenanaccurrenthavinganrmsvalueequalto10ofthedczenercurrent(IZTorIZK)issuperimposedtoIZTorIZK.。 3.Themaxzenercurrent

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N5939B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODEVOLTAGE-11TO200Volts

FEATURES ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●TypicalIRlessthan1£gAabove11V ●Hightemperaturesoldering:260℃/10secondsatterminals ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassificati

GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd

星合电子山东星合明辉电子有限公司

GXELECTRONICS
1N5939B

AxialLeadZenerDiodes

VZ:5.6to200V PD:1.5W Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclippingcircuits withhighpowerrating MechanicalData ●Case:Moldedp

ANOVAAnova Technologies CO., LTD.

林朋科技林朋科技股份有限公司

ANOVA
1N5939B

ZenerDiodes1N59Series

FEATURES ●Ptot1.5W ●Vz3.3V-240V

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE
1N5939B

1.5WZENERDIODE

GlassPassivatedDieConstruction 1.5WPowerDissipation 3.3V–200VNominalZenerVoltage 5StandardVzTolerance LowInductance ForUseinVoltageRegulatororReference PlasticCaseMaterialhasULFlammability ClassificationRating94V-0 MechanicalData

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE
1N5939B

AxialLeadAxialLead

Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●RoHScompliant ●Foruseinstabilizingandclippingcircuitswithhighpowerrating

ANOVAAnova Technologies CO., LTD.

林朋科技林朋科技股份有限公司

ANOVA
1N5939B

3W39VZenerdiode

文件：738.238 Kbytes Page：4 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N5939B

1.5WattsAxialLeadedZenerDiodes

文件：422.798 Kbytes Page：2 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者：深圳冠荣电子有限公司

SUNMATE
1N5939B

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：ZENER DIODE 分立半导体产品 二极管 - 齐纳 - 单

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
1N5939B

GLASSPASSIVATEDJUNCTIONSILICONZENERDIODES

文件：49.4 Kbytes Page：4 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5939

SILICON1.5WATTZENERDIODES

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939

SILICON1.5WATTZENERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5939

ZENERDIODES

FEATURES: *CompleteVoltageRange3.3to240Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent *Pb/RoHSFree

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
1N5939

ZENERDIODES

FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

TAYCHIPST
1N5939

ZENERDIODES

文件：2.01679 Mbytes Page：14 Pages

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
1N5939BG

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913BG-5956BGseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithavarietyoftolerancesavailable.Theyarealsoavailableinvariousmilitaryequivalentscreeninglevelsforhighreliability.TheseglassencapsulatedZenerswithaG

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939B-LFR

1.5WATTSILICONZENERDIODE

FEATURES ●PLASTICPACKAGEHASUNDERWRITERSLABORATORYFLAMMABILITYCLASSIFICATION94V-0 ●LOWZENERIMPEDANCE ●EXCELLENTCLAMPINGCAPABILITY ●LEADFREE MECHANICALDATA ●CASE:MOLDEDPLASTIC,DO41,DIMENSIONSININCHESAND(MILLIMETERS) ●TERMINALS:AXIALLEADSSOLDERABLE

FRONTIER

Frontier Electronics

FRONTIER
1N5939BP

Axial-Leaded1.5WattZenerDiodes

DESCRIPTION The1N5913-5956Bseriesof1.5wattZenersprovidesvoltageregulationinaselectionfrom3.3to200voltswithdifferenttolerancesasidentifiedbysuffixletteronthepart.TheseplasticencapsulatedZenershavemoistureclassificationofLevel1withnodrypackrequired.Theya

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5939B TR PBFREE

封装/外壳：DO-204AL，DO-41，轴向 包装：散装 描述：DIODE ZENER 39V 1.5W DO41 分立半导体产品 二极管 - 齐纳 - 单

CentralCentral Semiconductor Corp

美国中央半导体

Central
1N5939BUR-1

METALLURGICALLYBONDEDGLASSSURFACEMOUNT1.5WATTZENERS

文件：191.98 Kbytes Page：3 Pages

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5939B产品属性

  • 类型

    描述

  • 型号

    1N5939B

  • 制造商

    TAITRON

  • 制造商全称

    TAITRON Components Incorporated

  • 功能描述

    1.5W Zener Diodes

1N5939B供应商更多...

更新时间：2025-6-7 16:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市嵩宏达科技有限公司
1N5939B
YANGJIE/扬杰科技
24+
DO-41
50000
全新原装,一手货源,全场热卖!
询价
深圳冠荣电子有限公司
1N5939B
SUNMATE(森美特)
2019+ROHS
DO-41
66688
森美特高品质产品原装正品免费送样
询价
深圳市创新迹电子有限公司
1N5939C
MICROCHIP
23+
7300
专注配单,只做原装进口现货
询价
深圳市安富世纪电子有限公司
1N5939C
MICROCHIP
23+
7300
专注配单,只做原装进口现货
询价
深圳市得捷芯城科技有限公司
1N5939B
SUNMATE/森美特
24+
NA/
32156
优势代理渠道,原装正品,可全系列订货开增值税票
询价
中天科工半导体（深圳）有限公司
1N5939B
PANJIT
20+
DO-201AE
36800
原装优势主营型号-可开原型号增税票
询价
富凯科技(深圳）有限公司
1N5939B
YANGJIE/扬杰科技
24+
DO-41
50000
只做原装，欢迎询价，量大价优
询价
深圳市百域芯科技有限公司
1N5939B
SUNMATE/森美特
21+
DO-41
120000
长期代理优势供应
询价
深圳市博中泰实业有限公司
1N5939B二极管
SUNMATE/森美特
24+
DO-41
60000
询价
现代芯城（深圳）科技有限公司
1N5939BG
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择
询价

1N5939B芯片相关品牌

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1N5939B规格书下载地址

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1N5939B数据表相关新闻

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