1N5819价格

参考价格:¥0.1665

型号:1N5819 品牌:MULTICOMP 备注:这里有1N5819多少钱,2025年最近7天走势,今日出价,今日竞价,1N5819批发/采购报价,1N5819行情走势销售排行榜,1N5819报价。
型号 功能描述 生产厂家 企业 LOGO 操作
1N5819

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com

VishayVishay Siliconix

威世威世科技公司

1N5819

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

ONSEMI

安森美半导体

1N5819

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recogni

SAMYANG

三阳电子

1N5819

1.0A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

WTE

Won-Top Electronics

1N5819

SCHOTTKY BARRIER RECTIFIER

Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection Low power loss,high efficiency High current capability,low forward voltage drop High surge capability For use in lo

SY

顺烨电子

1N5819

SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Motorola

摩托罗拉

1N5819

1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

PANJIT

強茂

1N5819

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. FEATURES AND BENEF

STMICROELECTRONICS

意法半导体

1N5819

1AMPERE SCHOTTKY BARRIER RECTIFIER

TRSYS

Transys Electronics

1N5819

SCHOTTKY BARRIER RECTIFIER(VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES ✶Low switching noise ✶Low forward voltage drop ✶High current capability ✶High switching capability ✶High reliability ✶High surge capability

WINGS

永盛电子

1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

WTE

Won-Top Electronics

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction * Guardring for overvoltage protection * Low power loss, high efficiency *

ZOWIE

智威

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm) lead length at 5 lbs tension

SSE

1N5819

SCHOTTKY BARRIER DIODE

SEMTECH

先之科

1N5819

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

Fairchild

仙童半导体

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

BYTES

1N5819

1.0AMP. SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability

JGD

固锝电子

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

FORMOSA

美丽微半导体

1N5819

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capability • High reliability • High surge capability

DCCOM

道全

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss, high efficiency ♦

GE

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED

CDI-DIODE

1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application ● Lead F

DIODES

美台半导体

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIER

Features • Metal semiconductor junction with guard ring • Epitaxial construction • low forward voltage drop • High current capability • Easily cleaned with freon, alcohol, chlorothene and similar solvents • Plastic material UL recognized 94V-O • For use in low voltage, high frequency in

Fuji

富士通

1N5819

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop * Pb / RoHS Free

EIC

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction, majority carrier conduction ● Guardring for overvoltage protection ● Low power loss, high efficiency ● High cu

Good-Ark

固锝电子

1N5819

SCHOTTKY BARRIER DIODES

Reverse Voltage 20 to 40V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications

LRC

乐山无线电

1N5819

1 Amp Schottky Barrier Rectifier 20 to 40 Volts

Features • Guard Ring Protection • Low Forward Voltage • Low Power Loss For High Efficiency • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information)

MCC

1N5819

Schottky Barrier Rectifier

Reverse Voltage: 20 to 40V Forward Current: 1.0A Features - Plastic package has Underwriters Laboratory Flammability Classification 94V-0 - Low power loss, high efficiency - For use in low voltage high frequency inverters, free wheeling, and polarity protection applications - Guardri

COMCHIP

典琦

1N5819

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC

VishayVishay Siliconix

威世威世科技公司

1N5819

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

Fairchild

仙童半导体

1N5819

Schottky barrier rectifiers diodes

Forward Current: 1 A Reverse Voltage: 20 to 40 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0

Semikron

赛米控丹佛斯

1N5819

SCHOTTKY BARRIER RECTIFIERS

1.0 AMPS ● Plastic material used carries UL flammability classification 94V-0 ● Extremely low Vf, low power loss, high efficiency ● High stable oxide passivated junction ● Low stored charge, majority carrier conduction

STANSON

司坦森

1N5819

Axial Lead Schottky Power Rectifiers

WEITRON

1N5819

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

ONSEMI

安森美半导体

1N5819

SCHOTTKY RECTIFIER 1.0 Amp

Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leaded

IRF

1N5819

SCHOTTKY BARRIER DIODE

FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

UTC

友顺

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

Microsemi

美高森美

1N5819

1.0 AMP. Schottky Barrier Rectifiers

Voltage Range 20 to 40 Volts Current 1.0 Ampere Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability

TSC

台湾半导体

1N5819

SCHOTTKY DIODE

FEATURES Power dissipation PD : 300 mW(Tamb=25℃) Collector current IF : 1 A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

TEL

1N5819

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capabi

DAESAN

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capacity ● For use in low voltage,high frequency inverters free wheeling, and polarity protection applications ● RoHS COMPLIANT

DEC

1N5819

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere FEATURES ● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low vlotage, high frequency in

HY

虹扬科技

1N5819

1.0 AMP. SCHOTTKY BARRIER RECTIFIERS

Voltage Range 20 to 40 Volts Current 1.0 Amperes Features * Low forward voltage drop * High current capability * High reliability * High surge current capability

YANGJIE

扬杰电子

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

UNIOHM

厚声

1N5819

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

SILAN

士兰微

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Fast switching. • Low forward voltage, high current capability. • Low power loss, high efficiency. • High current surge capability. • High temperature soldering guaranteed: 250°C/10 seconds, 0.375 (9.5mm) lead length at 5 lbs

MIC

昌福电子

1N5819

1A Schottky Barrier Rectifiers

Features • Guardring for overvoltage protection • Metal to silicon junction, majority carrier conduction • Very small conduction losses • Extremely fast switching • High current capability, low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters

TAITRON

1N5819

VOLTAGE 20V ~ 40V 1.0AMP Schottky Barrier Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

SECOS

喜可士

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE:20-40V CURRENT:1.0A FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capabitity • High reliability • High surge capability

CHONGQING

平伟实业

1N5819

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop

SYNSEMI

1N5819

1.0AMP. Schottky Barrier Rectifier

VOLTAGE: 20 TO 40V CURRENT: 1.0A Specification Features: ▪ Case: Epoxy, Molded ▪ Weight: 0.4Gram (Approximately) ▪ High current capability, Low forward voltage drop ▪ High surge current capability ▪ Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are Readily Solderab

TAK_CHEONG

德昌电子

1N5819

Schottky Barrier Rectifier Diodes

Features ● For Surface Mounted Applications ● Metal Silicon Junction, Majority Carrier Conduction ● Low Power Loss, High Efficiency ● High Forward Surge Current Capability

KEXIN

科信电子

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

BILIN

银河微电

1N5819

1.0Amp Silicon Schottky Barrier Rectifiers

Features • Low forward voltage drop • High current capability • High surge current capability • High reliability • Epitaxial construction

CYSTEKEC

全宇昕科技

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High cu

JINANJINGHENG

晶恒集团

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High curren

SY

顺烨电子

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Guardring for overvoltage protection ● Low power loss,high efficiency ● High curre

DIOTECH

1N5819

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 1.0A

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension

GULFSEMI

海湾电子

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Fast switching. • Low forward voltage, high current capability. • Low power loss, high efficiency. • High current surge capability. • High temperature soldering guaranteed: 250°C/10 seconds, 0.375 (9.5mm) lead length at 5 lbs

PFS

平盛电子

1N5819

SCHOTTKY BARRIER RECTIFIERS

AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consrjction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency invert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5819产品属性

  • 类型

    描述

  • 型号

    1N5819

  • 功能描述

    肖特基二极管与整流器 Vr/40V Io/1A BULK

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-11-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay(威世)
24+
标准封装
7678
原厂直销,大量现货库存,交期快。价格优,支持账期
TOSHIBA/东芝
25+
SMA
54648
百分百原装现货 实单必成 欢迎询价
TWGMC臺灣迪嘉
25+
SOD323
36000
TWGMC臺灣迪嘉原装现货1N5819WS即刻询购立享优惠#长期有排单订
ON
23+
NA
6800
原装正品,力挺实单
ON
24+/25+
DO-214
2500
原装正品现货库存价优
MIC
24+
SOD123
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ON
24+
Axial Lead-2
25000
ON全系列可订货
DIODES/美台
24+
SOD123
7850
只做原装正品现货或订货假一赔十!
DIODES/美台
23+
SOD-123
50000
原装正品 支持实单
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业

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