1N5819价格

参考价格:¥0.1665

型号:1N5819 品牌:MULTICOMP 备注:这里有1N5819多少钱,2025年最近7天走势,今日出价,今日竞价,1N5819批发/采购报价,1N5819行情走势销售排行榜,1N5819报价。
型号 功能描述 生产厂家 企业 LOGO 操作
1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

Microsemi

美高森美

1N5819

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1N5819

1.0 Ampere Schottky Barrier Rectifiers

Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

1N5819

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● High Reliability ● High Current Capability

Microsemi

美高森美

1N5819

Axial Lead Rectifiers

Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−volt

ONSEMI

安森美半导体

1N5819

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency

ONSEMI

安森美半导体

1N5819

Schottky Barrier Rectifiers

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in    accordance to WEEE 2002/96/EC

VishayVishay Siliconix

威世科技

1N5819

Schottky Barrier Plastic Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com

VishayVishay Siliconix

威世科技

1N5819

SCHOTTKY BARRIER DIODE

FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage drop. * High surge current capability. * For use in low voltage, high frequency inverters, free wheeling diode, and polarity protection applications.

UTC

友顺

1N5819

Schottky Barrier Rectifier

Central

1N5819

1.0A SCHOTTKY BARRIER RECTIFIER

Features ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application ● Lead F

DIODES

美台半导体

1N5819

Schottky Barrier Rectifiers

• Nominal current 1 A • Repetitive peak reverse voltage 20...40 V • Plastic case DO-15 (DO-204AC) • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • Standard packa

Diotec

德欧泰克

1N5819

Schottky Barrier Rectifier Diodes

• Nominal current 1 A • Repetitive peak reverse voltage 20...40 V • Plastic case DO-15 (DO-204AC) • Weight approx. 0.4 g • Plastic material has UL classification 94V-0 • Standard packa

Diotec

德欧泰克

1N5819

SCHOTTKY BARRIER RECTIFIER DIODES

PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop * Pb / RoHS Free

EIC

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIER

Features • Metal semiconductor junction with guard ring • Epitaxial construction • low forward voltage drop • High current capability • Easily cleaned with freon, alcohol, chlorothene and similar solvents • Plastic material UL recognized 94V-O • For use in low voltage, high frequency in

Fuji

富士通

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction, majority carrier conduction ● Guardring for overvoltage protection ● Low power loss, high efficiency ● High cu

Good-Ark

固锝电子

1N5819

SCHOTTKY BARRIER DIODES

Reverse Voltage 20 to 40V Forward Current 1.0A Feature & Dimensions * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage high frequency inverters, free wheeling,and polarity protection applications

LRC

乐山无线电

1N5819

1 Amp Schottky Barrier Rectifier 20 to 40 Volts

Features • Guard Ring Protection • Low Forward Voltage • Low Power Loss For High Efficiency • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (Note1) (PSuffix designates Compliant. See ordering information)

MCC

1N5819

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

1N5819

SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Motorola

摩托罗拉

1N5819

SCHOTTKY BARRIER DIODE

SEMTECH

先之科

1N5819

1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere?

Surge

1N5819

1.0 AMP. Schottky Barrier Rectifiers

Voltage Range 20 to 40 Volts Current 1.0 Ampere Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability

TSC

台湾半导体

1N5819

Axial Lead Schottky Power Rectifiers

WEITRON

1N5819

1.0A Axial Leaded Schottky Barrier Rectifiers

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SUNMATE

森美特

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli

BILIN

银河微电

1N5819

Schottky barrier rectifiers diodes

Forward Current: 1 A Reverse Voltage: 20 to 40 V Features ● Max. solder temperature: 260°C ● Plastic material has UL classification 94V-0

Semikron

赛米控丹佛斯

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

BYTES

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500/586 • 1 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED

CDI-DIODE

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE:20-40V CURRENT:1.0A FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capabitity • High reliability • High surge capability

CHONGQING

平伟实业

1N5819

Schottky Barrier Rectifier

Reverse Voltage: 20 to 40V Forward Current: 1.0A Features - Plastic package has Underwriters Laboratory Flammability Classification 94V-0 - Low power loss, high efficiency - For use in low voltage high frequency inverters, free wheeling, and polarity protection applications - Guardri

COMCHIP

典琦

1N5819

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency in

CTC

沛伦

1N5819

1.0Amp Silicon Schottky Barrier Rectifiers

Features • Low forward voltage drop • High current capability • High surge current capability • High reliability • Epitaxial construction

CYSTEKEC

全宇昕科技

1N5819

PLASTIC SCHOTTKY BARRIER RECTIFIER

Features • Low Forward Voltage Drop • High Current Capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension • Lead and body according with RoHS standard

DACHANG

大昌电子

1N5819

1 AMP SCHOTTKY BARRIER RECTIFIERS

FEATURES ● Metal semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capacity ● For use in low voltage,high frequency inverters free wheeling, and polarity protection applications ● RoHS COMPLIANT

DEC

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction ● Guardring for overvoltage protection ● Low power loss,high efficiency ● High curre

DIOTECH

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

FORMOSA

美丽微半导体

1N5819

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

FORMOSA

美丽微半导体

1N5819

1A SCHOTTKY BARRIER RECTIFIERS

FEATURES ● UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOUND ● EXTREMELY LOW VF ● LOW POWER LOSS/HIGH EFFICIENCY ● LOW STORED CHARGE, MAJORITY CARRIER CONDUCTION

FRONTIER

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction, majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss, high efficiency ♦

GE

1N5819

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 40V CURRENT: 1.0A

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension

GULFSEMI

海湾电子

1N5819

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere FEATURES ● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low vlotage, high frequency in

HY

虹扬科技

1N5819

CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts

Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capabi

DAESAN

1N5819

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 1.0 Ampere FEATURES • Low switching noise • Low forward voltage drop • High current capability • High switching capability • High reliability • High surge capability

DCCOM

道全

1N5819

SCHOTTKY RECTIFIER 1.0 Amp

Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. • Low profile, axial leaded

IRF

1N5819

1.0AMP. SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability

JGD

固锝电子

1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High cu

JINANJINGHENG

晶恒集团

1N5819

Schottky Barrier Rectifier Diodes

Features ● For Surface Mounted Applications ● Metal Silicon Junction, Majority Carrier Conduction ● Low Power Loss, High Efficiency ● High Forward Surge Current Capability

KEXIN

科信电子

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Fast switching. • Low forward voltage, high current capability. • Low power loss, high efficiency. • High current surge capability. • High temperature soldering guaranteed: 250°C/10 seconds, 0.375 (9.5mm) lead length at 5 lbs

MIC

昌福电子

1N5819

SCHOTTKY BARRIER RECTIFIERS

AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consrjction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency invert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5819

AXIAL LEAD RECTIFIERS

AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial consrjction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency invert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5819

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capabitity * High reliability * High surge capability * Pb-Free package is available RoHS product for packing code suffix G Halogen f

PACELEADER

霈峰

1N5819

1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere)

VOLTAGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters ,f

PANJIT

強茂

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES • Fast switching. • Low forward voltage, high current capability. • Low power loss, high efficiency. • High current surge capability. • High temperature soldering guaranteed: 250°C/10 seconds, 0.375 (9.5mm) lead length at 5 lbs

PFS

平盛电子

1N5819

VOLTAGE 20V ~ 40V 1.0AMP Schottky Barrier Rectifiers

FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction

SECOS

喜可士

1N5819

SCHOTTKY BARRIER RECTIFIERS

Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and pola

SEMTECH_ELEC

先之科半导体

1N5819

Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

SILAN

士兰微

1N5819

SCHOTTKY BARRIER RECTIFIER

VOLTAGE: 20 TO 40V CURRENT: 1.0A FEATURES • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250°C/10sec/0.375(9.5mm) lead length at 5 lbs tension

SSE

1N5819

SCHOTTKY BARRIER RECTIFIERS

1.0 AMPS ● Plastic material used carries UL flammability classification 94V-0 ● Extremely low Vf, low power loss, high efficiency ● High stable oxide passivated junction ● Low stored charge, majority carrier conduction

STANSON

司坦森

1N5819

PLASTIC SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES ◆ Low switching noise ◆ Low forward voltage drop ◆ High forward surge capability ◆ High reliability ◆ High temperature soldering guaranteed ◆ 260℃/10 seconds,0.375”(9.5mm)lead length at 5 lbs(2.3kg) tension

SUNTAN

1N5819产品属性

  • 类型

    描述

  • 型号

    1N5819

  • 功能描述

    肖特基二极管与整流器 Vr/40V Io/1A BULK

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-9-27 11:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
2016+
SOD123
3950
只做原装,假一罚十,公司可开17%增值税发票!
TWGMC臺灣迪嘉
25+
SOD323
36000
TWGMC臺灣迪嘉原装现货1N5819WS即刻询购立享优惠#长期有排单订
MICROSEMI/美高森美
23+
NA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
DIODES/美台
24+
SOD123
7850
只做原装正品现货或订货假一赔十!
MIC
22+
DO41
810
原装
三年内
1983
只做原装正品
24+
N/A
63000
一级代理-主营优势-实惠价格-不悔选择
NK/南科功率
2025+
SOD-123
986966
国产
ON
24+
Axial Lead-2
25000
ON全系列可订货
CJ/长电
23+
SOD-523
6500
专注配单,只做原装进口现货

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