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位置：首页 > IC中文资料第148页 > 1N5819

1N5819价格

参考价格：￥0.1665

型号：1N5819 品牌：MULTICOMP 备注：这里有1N5819多少钱，2025年最近7天走势，今日出价，今日竞价，1N5819批发/采购报价，1N5819行情走势销售排行榜，1N5819报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N5819

SCHOTTKYBARRIERRECTIFIERS1AMPERE20,30and40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
1N5819

1AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
1N5819

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
1N5819

SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES ✶Lowswitchingnoise ✶Lowforwardvoltagedrop ✶Highcurrentcapability ✶Highswitchingcapability ✶Highreliability ✶Highsurgecapability

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

WINGS
1N5819

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications

WTEWon-Top Electronics

毅星電子毅星电子股份有限公司

WTE
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES *TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency *

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
1N5819

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

济南固锝电子济南固锝电子器件有限公司

JGD
1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:1.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSE

Shanghai Sunrise Electronics

SSE
1N5819

SCHOTTKYBARRIERDIODE

SEMTECHSemtech Corporation

升特

SEMTECH
1N5819

1.0AmpereSchottkyBarrierRectifiers

Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

BYTES
1N5819

1AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

TRSYS
1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
1N5819

TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapability •Highreliability •Highsurgecapability

DCCOM

Dc Components

DCCOM
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrier conduction ♦Guardringforovervoltageprotection ♦Lowpowerloss, highefficiency ♦

GE

GE Industrial Company

GE
1N5819

1AMPSCHOTTKYBARRIERRECTIFIERS

•1N5819-1AND1N6761-1AVAILABLEINJAN,JANTX,JANTXV, ANDJANSPERMIL-PRF-19500/586 •1AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

CDI-DIODE
1N5819

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ●LeadF

DIODESDiodes Incorporated

美台半导体

DIODES
1N5819

1AMPSCHOTTKYBARRIERRECTIFIER

Features •Metalsemiconductorjunctionwithguardring •Epitaxialconstruction •lowforwardvoltagedrop •Highcurrentcapability •Easilycleanedwithfreon,alcohol,chlorothene andsimilarsolvents •PlasticmaterialULrecognized94V-O •Foruseinlowvoltage,highfrequencyin

FujiFuji Electric

富士电机富士电机株式会社

Fuji
1N5819

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

EIC
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40Volts ForwardCurrent-1.0Ampere Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcu

Good-Ark

GOOD-ARK Electronics

Good-Ark
1N5819

SCHOTTKYBARRIERDIODES

ReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

LRC
1N5819

1AmpSchottkyBarrierRectifier20to40Volts

Features •GuardRingProtection •LowForwardVoltage •LowPowerLossForHighEfficiency •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation)

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
1N5819

SchottkyBarrierRectifier

ReverseVoltage:20to40V ForwardCurrent:1.0A Features -PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 -Lowpowerloss,highefficiency -Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications -Guardri

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP
1N5819

SchottkyBarrierRectifiers

FEATURES •Guardringforovervoltageprotection •Verysmallconductionlosses •Extremelyfastswitching •Lowforwardvoltagedrop •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin   accordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
1N5819

1.0AmpereSchottkyBarrierRectifiers

Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
1N5819

Schottkybarrierrectifiersdiodes

ForwardCurrent:1A ReverseVoltage:20to40V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0

SemikronSemikron International

赛米控丹佛斯

Semikron
1N5819

SCHOTTKYBARRIERRECTIFIERS

1.0AMPS ●PlasticmaterialusedcarriesUL flammabilityclassification94V-0 ●ExtremelylowVf,lowpowerloss,highefficiency ●Highstableoxidepassivatedjunction ●Lowstoredcharge,majoritycarrierconduction

STANSON

Stanson Technology

STANSON
1N5819

AxialLeadSchottkyPowerRectifiers

WEITRON

Weitron Technology

WEITRON
1N5819

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
1N5819

SCHOTTKYRECTIFIER1.0Amp

Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. •Lowprofile,axialleaded

IRF

International Rectifier

IRF
1N5819

SCHOTTKYBARRIERDIODE

FEATURES *Schottkybarrierchip *Lowpowerloss,highefficiency. *Lowforwardvoltagedrop. *Highsurgecurrentcapability. *Foruseinlowvoltage,highfrequencyinverters,freewheeling diode,andpolarityprotectionapplications.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
1N5819

1AMPSCHOTTKYBARRIERRECTIFIERS

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N5819

1.0AMP.SchottkyBarrierRectifiers

VoltageRange20to40VoltsCurrent1.0Ampere Features ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSC
1N5819

SCHOTTKYDIODE

FEATURES Powerdissipation PD:300mW(Tamb=25℃) Collectorcurrent IF:1A Collector-basevoltage VR:1N5817:20V 1N5819:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

UNIOHMUniohm

台湾厚声

UNIOHM
1N5819

CURRENT1.0AmpereVOLTAGE20to40Volts

Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi

DAESAN

Daesan Electronics Corp.

DAESAN
1N5819

1AMPSCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalsemiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapacity ●Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications ●RoHSCOMPLIANT

DEC

DIOTEC Electronics Corporation

DEC
1N5819

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin

HY

HY ELECTRONIC CORP.

HY
1N5819

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

VoltageRange20to40VoltsCurrent1.0Amperes Features *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
1N5819

SchottkyBarrierRectifiers

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN
1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs

MICMIC GROUP RECTIFIERS

昌福电子昌福电子有限公司

MIC
1N5819

1ASchottkyBarrierRectifiers

Features •Guardringforovervoltageprotection •Metaltosiliconjunction,majoritycarrierconduction •Verysmallconductionlosses •Extremelyfastswitching •Highcurrentcapability,lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters

TAITRON

TAITRON Components Incorporated

TAITRON
1N5819

VOLTAGE20V~40V1.0AMPSchottkyBarrierRectifiers

FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGE：20-40VCURRENT：1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
1N5819

SCHOTTKYBARRIERRECTIFIERDIODES

PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop

SYNSEMI

SynSemi，Inc.

SYNSEMI
1N5819

1.0AMP.SchottkyBarrierRectifier

VOLTAGE:20TO40VCURRENT:1.0A SpecificationFeatures: ▪Case:Epoxy,Molded ▪Weight:0.4Gram(Approximately) ▪Highcurrentcapability,Lowforwardvoltagedrop ▪Highsurgecurrentcapability ▪Finish:AllExternalSurfacesCorrosionResistantAndTerminalLeadsAre ReadilySolderab

TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd

德昌电子德昌电子（集团）有限公司

TAK_CHEONG
1N5819

SchottkyBarrierRectifierDiodes

Features ●ForSurfaceMountedApplications ●MetalSiliconJunction,MajorityCarrierConduction ●LowPowerLoss,HighEfficiency ●HighForwardSurgeCurrentCapability

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
1N5819

1.0AmpSiliconSchottkyBarrierRectifiers

Features •Lowforwardvoltagedrop •Highcurrentcapability •Highsurgecurrentcapability •Highreliability •Epitaxialconstruction

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

CYSTEKEC
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcu

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集团济南晶恒电子有限责任公司

JINANJINGHENG
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre

DIOTECH

Diotech Company.

DIOTECH
1N5819

SCHOTTKYBARRIERRECTIFIERVOLTAGE:20TO40VCURRENT:1.0A

VOLTAGE:20TO40VCURRENT:1.0A FEATURE Highcurrentcapability,Lowforwardvoltagedrop Lowpowerloss,highefficiency Highsurgecapability Hightemperaturesolderingguaranteed 250°C/10sec/0.375leadlengthat5lbstension

GULFSEMIGulf Semiconductor

海湾电子海湾电子（山东）有限公司

GULFSEMI
1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛电子深圳市平盛电子有限公司

PFS
1N5819

SCHOTTKYBARRIERRECTIFIERS

AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

TGS

Tiger Electronic Co.,Ltd

TGS
1N5819

PLASTICSCHOTTKYBARRIERRECTIFIER

Features •LowForwardVoltageDrop •HighCurrentCapability •Hightemperaturesolderingguaranteed: 260℃/10seconds,0.375(9.5mm)leadlength, 5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

大昌电子如皋市大昌电子有限公司

DACHANG
1N5819

SCHOTTKYBARRIERRECTIFIERS

REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyin

CTC

ctconline

CTC
1N5819

1AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-1.0Ampere?

Surge

Surge Components

Surge
1N5819

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N5819产品属性

  • 类型

    描述

  • 型号

    1N5819

  • 功能描述

    肖特基二极管与整流器 Vr/40V Io/1A BULK

  • RoHS

    否

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

1N5819供应商更多...

更新时间：2025-7-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
1N5819G
ON(安森美)
24+
标准封装
9048
全新原装正品/价格优惠/质量保障
询价
深圳市得捷芯城科技有限公司
1N5819-E3/54
Vishay(威世)
24+
标准封装
7678
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
中天科工半导体（深圳）有限公司
1N5819WS
TWGMC臺灣迪嘉
25+
SOD323
36000
TWGMC臺灣迪嘉原装现货1N5819WS即刻询购立享优惠#长期有排单订
询价
深圳市明嘉莱科技有限公司
1N5819
23+
SMD
618000
明嘉莱只做原装正品现货
询价
标准国际(香港)有限公司
1N5819
0N
13+
标准
5000
公司原装现货
询价
深圳市科恒伟业电子有限公司
1N5819
ON
2016+
DO-41
6523
只做进口原装现货!假一赔十!
询价
深圳市振宏微科技有限公司
1N5819SS14
OTHER/其它
23+
NA
7825
原装正品!清仓处理!
询价
深圳市鸿昌盛电子科技有限公司
1N5819HW-7-F
2015+
200
公司现货库存
询价
深圳市永贝尔科技有限公司
1N5819
BILIN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
上海鑫科润电子科技有限公司
1N5819
TOSHIBA
1111+
SMD
1791
原装现货海量库存欢迎咨询
询价

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