位置:首页 > IC中文资料第148页 > 1N5819
1N5819价格
参考价格:¥0.1665
型号:1N5819 品牌:MULTICOMP 备注:这里有1N5819多少钱,2025年最近7天走势,今日出价,今日竞价,1N5819批发/采购报价,1N5819行情走势销售排行榜,1N5819报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
1N5819 | SCHOTTKYBARRIERRECTIFIERS1AMPERE20,30and40VOLTS AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage, | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-1.0Ampere) VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | ||
1N5819 | LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere) VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES ✶Lowswitchingnoise ✶Lowforwardvoltagedrop ✶Highcurrentcapability ✶Highswitchingcapability ✶Highreliability ✶Highsurgecapability | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | ||
1N5819 | 1.0ASCHOTTKYBARRIERRECTIFIER Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES *TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency * | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ||
1N5819 | 1.0AMP.SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGE:20TO40VCURRENT:1.0A FEATURES •Epitaxialconstructionforchip •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension | SSE Shanghai Sunrise Electronics | ||
1N5819 | SCHOTTKYBARRIERDIODE
| SEMTECHSemtech Corporation 升特 | ||
1N5819 | 1.0AmpereSchottkyBarrierRectifiers Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | BYTES Bytes | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIER
| TRSYS Transys Electronics | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS
| FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
1N5819 | TECHNICALSPECIFICATIONSOFSCHOTTKYBARRIERRECTIFIER VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapability •Highreliability •Highsurgecapability | DCCOM Dc Components | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ♦PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ♦Metalsiliconjunction,majoritycarrier conduction ♦Guardringforovervoltageprotection ♦Lowpowerloss, highefficiency ♦ | GE GE Industrial Company | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS •1N5819-1AND1N6761-1AVAILABLEINJAN,JANTX,JANTXV, ANDJANSPERMIL-PRF-19500/586 •1AMPSCHOTTKYBARRIERRECTIFIERS •HERMETICALLYSEALED •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | ||
1N5819 | 1.0ASCHOTTKYBARRIERRECTIFIER Features ●GuardRingDieConstructionforTransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForwardVoltageDrop ●ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ●LeadF | DIODESDiodes Incorporated 美台半导体 | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIER Features •Metalsemiconductorjunctionwithguardring •Epitaxialconstruction •lowforwardvoltagedrop •Highcurrentcapability •Easilycleanedwithfreon,alcohol,chlorothene andsimilarsolvents •PlasticmaterialULrecognized94V-O •Foruseinlowvoltage,highfrequencyin | FujiFuji Electric 富士电机富士电机株式会社 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop *Pb/RoHSFree | EIC EIC discrete Semiconductors | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40Volts ForwardCurrent-1.0Ampere Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcu | Good-Ark GOOD-ARK Electronics | ||
1N5819 | SCHOTTKYBARRIERDIODES ReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | ||
1N5819 | 1AmpSchottkyBarrierRectifier20to40Volts Features •GuardRingProtection •LowForwardVoltage •LowPowerLossForHighEfficiency •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
1N5819 | SchottkyBarrierRectifier ReverseVoltage:20to40V ForwardCurrent:1.0A Features -PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 -Lowpowerloss,highefficiency -Foruseinlowvoltagehighfrequencyinverters, freewheeling,andpolarityprotectionapplications -Guardri | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | ||
1N5819 | SchottkyBarrierRectifiers FEATURES •Guardringforovervoltageprotection •Verysmallconductionlosses •Extremelyfastswitching •Lowforwardvoltagedrop •Highfrequencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC | VishayVishay Siliconix 威世科技威世科技半导体 | ||
1N5819 | 1.0AmpereSchottkyBarrierRectifiers Features •1.0ampereoperationatTA=90°Cwithnothermalrunaway. •Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
1N5819 | Schottkybarrierrectifiersdiodes ForwardCurrent:1A ReverseVoltage:20to40V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 | SemikronSemikron International 赛米控丹佛斯 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS 1.0AMPS ●PlasticmaterialusedcarriesUL flammabilityclassification94V-0 ●ExtremelylowVf,lowpowerloss,highefficiency ●Highstableoxidepassivatedjunction ●Lowstoredcharge,majoritycarrierconduction | STANSON Stanson Technology | ||
1N5819 | AxialLeadSchottkyPowerRectifiers
| WEITRON Weitron Technology | ||
1N5819 | AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
1N5819 | SCHOTTKYRECTIFIER1.0Amp Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. •Lowprofile,axialleaded | IRF International Rectifier | ||
1N5819 | SCHOTTKYBARRIERDIODE FEATURES *Schottkybarrierchip *Lowpowerloss,highefficiency. *Lowforwardvoltagedrop. *Highsurgecurrentcapability. *Foruseinlowvoltage,highfrequencyinverters,freewheeling diode,andpolarityprotectionapplications. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | ||
1N5819 | 1.0AMP.SchottkyBarrierRectifiers VoltageRange20to40VoltsCurrent1.0Ampere Features ◇Lowforwardvoltagedrop ◇Highcurrentcapability ◇Highreliability ◇Highsurgecurrentcapability | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | ||
1N5819 | SCHOTTKYDIODE FEATURES Powerdissipation PD:300mW(Tamb=25℃) Collectorcurrent IF:1A Collector-basevoltage VR:1N5817:20V 1N5819:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | UNIOHMUniohm 台湾厚声 | ||
1N5819 | CURRENT1.0AmpereVOLTAGE20to40Volts Features •PlasticPackagehasUnderwritersLaboratory FlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrentcapability,Lowforwardvoltagedrop •Highsurgecapabi | DAESAN Daesan Electronics Corp. | ||
1N5819 | 1AMPSCHOTTKYBARRIERRECTIFIERS FEATURES ●Metalsemiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapacity ●Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications ●RoHSCOMPLIANT | DEC DIOTEC Electronics Corporation | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithgardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvlotage,highfrequencyin | HY HY ELECTRONIC CORP. | ||
1N5819 | 1.0AMP.SCHOTTKYBARRIERRECTIFIERS VoltageRange20to40VoltsCurrent1.0Amperes Features *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | ||
1N5819 | SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs | MICMIC GROUP RECTIFIERS 昌福电子昌福电子有限公司 | ||
1N5819 | 1ASchottkyBarrierRectifiers Features •Guardringforovervoltageprotection •Metaltosiliconjunction,majoritycarrierconduction •Verysmallconductionlosses •Extremelyfastswitching •Highcurrentcapability,lowforwardvoltagedrop •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters | TAITRON TAITRON Components Incorporated | ||
1N5819 | VOLTAGE20V~40V1.0AMPSchottkyBarrierRectifiers FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGE:20-40VCURRENT:1.0A FEATURES •Lowswitchingnoise •Lowforwardvoltagedrop •Highcurrentcapability •Highswitchingcapabitity •Highreliability •Highsurgecapability | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERDIODES PRV:20-40Volts IO:1.0Ampere FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowcost *Lowforwardvoltagedrop | SYNSEMI SynSemi,Inc. | ||
1N5819 | 1.0AMP.SchottkyBarrierRectifier VOLTAGE:20TO40VCURRENT:1.0A SpecificationFeatures: ▪Case:Epoxy,Molded ▪Weight:0.4Gram(Approximately) ▪Highcurrentcapability,Lowforwardvoltagedrop ▪Highsurgecurrentcapability ▪Finish:AllExternalSurfacesCorrosionResistantAndTerminalLeadsAre ReadilySolderab | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子(集团)有限公司 | ||
1N5819 | SchottkyBarrierRectifierDiodes Features ●ForSurfaceMountedApplications ●MetalSiliconJunction,MajorityCarrierConduction ●LowPowerLoss,HighEfficiency ●HighForwardSurgeCurrentCapability | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
1N5819 | 1.0AmpSiliconSchottkyBarrierRectifiers Features •Lowforwardvoltagedrop •Highcurrentcapability •Highsurgecurrentcapability •Highreliability •Epitaxialconstruction | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcu | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ●Metalsiliconjunction,majoritycarrierconduction ●Guardringforovervoltageprotection ●Lowpowerloss,highefficiency ●Highcurre | DIOTECH Diotech Company. | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERVOLTAGE:20TO40VCURRENT:1.0A VOLTAGE:20TO40VCURRENT:1.0A FEATURE Highcurrentcapability,Lowforwardvoltagedrop Lowpowerloss,highefficiency Highsurgecapability Hightemperaturesolderingguaranteed 250°C/10sec/0.375leadlengthat5lbstension | GULFSEMIGulf Semiconductor 海湾电子海湾电子(山东)有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES •Fastswitching. •Lowforwardvoltage,highcurrentcapability. •Lowpowerloss,highefficiency. •Highcurrentsurgecapability. •Hightemperaturesolderingguaranteed: 250°C/10seconds,0.375(9.5mm)leadlength at5lbs | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS AXIALLEADRECTIFIERS ...employingtheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconsrjctionwithoxidepassivationandmetaloverlapcontact. Ideallysuitedforuseasrectifiersinlow-voltage,high-frequencyinvert | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
1N5819 | 1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | TGS Tiger Electronic Co.,Ltd | ||
1N5819 | PLASTICSCHOTTKYBARRIERRECTIFIER Features •LowForwardVoltageDrop •HighCurrentCapability •Hightemperaturesolderingguaranteed: 260℃/10seconds,0.375(9.5mm)leadlength, 5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | ||
1N5819 | SCHOTTKYBARRIERRECTIFIERS REVERSEVOLTAGE-20to40Volts FORWARDCURRENT-1.0Ampere FEATURES ●Metal-Semiconductorjunctionwithguardring ●Epitaxialconstruction ●Lowforwardvoltagedrop ●Highcurrentcapability ●TheplasticmaterialcarriesULrecognition94V-0 ●Foruseinlowvoltage,highfrequencyin | CTC ctconline | ||
1N5819 | 1AMPERESCHOTTKYBARRIERRECTIFIERSVOLTAGE-20to40VoltsCURRENT-1.0Ampere?
| Surge Surge Components | ||
1N5819 | 1AmpSchottkyRectifier 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |
1N5819产品属性
- 类型
描述
- 型号
1N5819
- 功能描述
肖特基二极管与整流器 Vr/40V Io/1A BULK
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
2015+ |
200 |
公司现货库存 |
|||||
MIC |
17+ |
DO41 |
6200 |
100%原装正品现货 |
|||
23+ |
SMD |
618000 |
明嘉莱只做原装正品现货 |
||||
TOSHIBA |
24+ |
SOT-23 |
6980 |
原装现货,可开13%税票 |
|||
DIODES/美台 |
2021+ |
SOD123 |
9865 |
100%原厂代理库存,正品全新现货 |
|||
MOT |
24+ |
DO-41 |
5642 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
OTHER/其它 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
DIODES |
23+ |
SOD123 |
15000 |
正规渠道,只有原装! |
|||
UTC |
23+ |
TO92 |
20000 |
||||
DIODES |
23+ |
SOD123 |
4000 |
原装现货低价出售 |
1N5819规格书下载地址
1N5819参数引脚图相关
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N5821S
- 1N5821M
- 1N5821H
- 1N5821G
- 1N5821
- 1N5820U
- 1N5820S
- 1N5820M
- 1N5820H
- 1N5820G
- 1N5820
- 1N581XS
- 1N581X
- 1N5819W
- 1N5819U
- 1N5819-TP
- 1N5819-T-F
- 1N5819-T
- 1N5819S
- 1N5819RLG
- 1N5819RL
- 1N5819M-13
- 1N5819M
- 1N5819L
- 1N5819HW-7-F
- 1N5819HW-7
- 1N5819H
- 1N5819-G
- 1N5819G
- 1N5819-E3/73
- 1N5819-E3/54-CUTTAPE
- 1N5819-E3/54
- 1N5819-E3/53
- 1N5819-E3/23
- 1N5819-CUTTAPE
- 1N5819-BP
- 1N5819-B
- 1N5819-1
- 1N5819_R2_10001
- 1N5818W
- 1N5818TR
- 1N5818-TP
- 1N5818-T-CUTTAPE
- 1N5818-T
- 1N5818S
- 1N5818RLG/BKN
- 1N5818RLG
- 1N5818M
- 1N5818L
- 1N5818H
- 1N5818G
- 1N5818-E3/73
- 1N5818-E3/54
- 1N5818-CUTTAPE
- 1N5818-BP
- 1N5818-B
- 1N5818
- 1N5817W
- 1N5817-TP
- 1N5817-T
- 1N5817S
- 1N5817RLG
- 1N5817MT-I
- 1N5817M
- 1N5817L
- 1N5817H
- 1N5817G
- 1N5817-E3/73
- 1N5817
- 1N5816R
- 1N5816
- 1N5815R
- 1N5815
- 1N5814R
- 1N5814
1N5819数据表相关新闻
1N5819W
1N5819W
2024-3-61N5819HW-7-F
1N5819HW-7-F
2023-7-201N5401
1N5401,当天发货0755-82732291全新原装现货或门市自取.
2020-9-161N5822
1N5822,全新原装当天发货或门市自取0755-82732291.
2020-7-261N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
1N5400TR,1SMA22CAT3G,2114-250A/225K,2322640兴中扬电子科技
2019-12-21N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
1N5353B,专业军工IC,军工电子元器件销售,兴中扬电子,航空IC
2019-12-2
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102