MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP

DESCRIPTION This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are

SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

DESCRIPTION This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.5 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are

Superfast Recovery Diodes Surface Mount (US)

Features ‹ Very low reverse recovery time ‹ Hermetically sealed non-cavity construction ‹ Soft, non-snap, off recovery characteristics ‹ Very low forward voltage drop VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA

Ultrafast Recovery Rectifier

Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded • Operating and Storage Temperature: -65°C to +175°C

Ultrafast Recovery Rectifier

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封装/外壳：SQ-MELF 包装：散装 描述：DIODE GEN PURP 50V 1.1A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SQ-MELF，A 包装：管件 描述：DIODE GEN PURP 50V 1A D5A 分立半导体产品 二极管 - 整流器 - 单

400V Axial Leaded Hermetically Sealed Standard Recovery Diode

SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

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Rectifier Diode Series

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Rectifier Diode Switching 2-Pin 50V, 2.5A, 25ns A-MELF Bag T/R

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless gl JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series\nVoidless hermetically sealed glass package\nQuadruple-layer passivation\nExtremely robust construction\nInternal “Category 1” metallurgical bonds\nJAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477;

SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

文件：132.46 Kbytes Page：2 Pages

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back

2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS

FEATURES: • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum • Metallization Thickness: 50,000Ã Nominal • Bonding Area: 23 x 23 mils Min. • Back Metallization: Gold • Junction Passivated with Thermal Silicon Dioxide - Planar Design • Back