封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：RF DIODE SCHOTTKY 20V 250MW 分立半导体产品 二极管 - 射频

Schottky Barrier Diodes for General Purpose Applications

Description The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D conv

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ Metal-to-silicon junction ◇ High breakdown voltage ◇ Low turn-on voltage ◇ Ultrafast switching speed ◇ Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction • High breakdown voltage • Low turn-on voltage • Ultrafast switching speed • Primarily intended for high level UHF/VHF detectionand pulse applications with broad dynamic range • The diode is also available in the MiniMELF case with type designation LL5

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT Qualified per MIL-PRF-19500/444

Schottky Barrier Diodes for General Purpose Applications

Description/Applications The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or