位置：首页 > IC中文资料第601页 > 1N5546B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5546B | LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE |   | |
1N5546B | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5546B | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | |
1N5546B | 0.5W Zener Diode Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades. | SS | | |
1N5546B | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE ZENER 33V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | |
1N5546B | LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | Microsemi 美高森美 | | |
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | Microsemi 美高森美 | | ||
LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | Microchip 微芯科技 | | ||
High-Reliability Diodes | Microchip 微芯科技 | | ||
High-Reliability Diodes | Microchip 微芯科技 | | ||
ZENER DIODE, 500mW 文件：123.7 Kbytes Page：2 Pages | Microsemi 美高森美 | | ||
ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages | Microsemi 美高森美 | |
1N5546B产品属性
- 类型
描述
- 型号
1N5546B
- 制造商
Aeroflex/Metelics
- 功能描述
LOW VOLTAGE AVALANCHE ZENER - Bulk
- 制造商
Microsemi Corporation
- 功能描述
ZENER SGL 33V 5% 417MW 2PIN DO-204AA - Bulk
- 制造商
Microsemi Corporation
- 功能描述
DIODE ZENER 33V 500MW DO-35
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
DO35 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Vishay(威世) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
1N5550 |
5 |
5 |
|||||
MOTOROLA/摩托罗拉 |
2023+ |
MODULE |
497 |
主打螺丝模块系列 |
|||
MSC |
2007/2008 |
25 |
公司现货 |
||||
Vishay(威世) |
23+ |
N/A |
11800 |
||||
VISHAY/威世 |
25+ |
SOD64 |
860000 |
明嘉莱只做原装正品现货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Vishay(威世) |
2021/2022+ |
标准封装 |
6500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
1N5546B规格书下载地址
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- 1N5539DUR-1
1N5546B数据表相关新闻
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DdatasheetPDF页码索引
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