1N5541B价格
参考价格：￥0.0000
型号：1N5541BUR-1JANTX 品牌：Microsemi/Lawrence 备注：这里有1N5541B多少钱，2026年最近7天走势，今日出价，今日竞价，1N5541B批发/采购报价，1N5541B行情走势销售排行榜，1N5541B报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5541B | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 |   | |
1N5541B | LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | | |
1N5541B | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5541B | 0.5W Zener Diode Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades. | SS | | |
1N5541B | 0.5W 22V 5% Zener Diode This Zener Diode is packaged in DO-35, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | |
1N5541B | Low Voltage Avalanche Zener The 1N5518 thru 1N5546 series of 0.5 watt Zener Voltage Regulators provides a selection from 3.3 to 33 volts in standard 5% tolerances as well as tighter tolerances identified by different suffix letters on the part number. These glass axial-leaded DO-35 Zeners are also available with an interna | MICROCHIP 微芯科技 | | |
1N5541B | Through-Hole Diode-Zener Single: Low Level | CENTRAL | | |
1N5541B | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：DIODE ZENER 22V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | |
1N5541B | LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | |
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
封装/外壳：DO-213AA 包装：卷带（TR） 描述：ZENER DIODE 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | ||
ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | |
1N5541B产品属性
- 类型
描述
- Case：
DO-35
- Configuration/ Description：
Single
- PD MAX：
400mW
- VZ NOM：
22V
- VZ MIN：
20.9V
- VZ MAX：
23.1V
- ZZT MAX：
100Ω
- @IZT：
1mA
- IR MAX：
0.01μA
- @VR：
19.8V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Microsemi |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
MICROSEMI |
25+ |
DO-35 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
1N5541B规格书下载地址
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DdatasheetPDF页码索引
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