位置：首页 > IC中文资料第600页 > 1N5539B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5539B | 0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  |   |
1N5539B | LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated |  | |
1N5539B | LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N5539B | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：DIODE ZENER 19V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | |
1N5539B | LOWREVERSELEAKAGECHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
0.4WLOWVOLTAGEAVALANCHEDIODES FEATURES *Lowzenernoisespecified *Lowzenerimpedance *Lowleakagecurrent *Hermeticallysealedglasspackage | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | | | |
LowVoltageAvalanche500mWZenerDiodesDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWVOLTAGEAVALANCHEZENERDIODESHIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE LOWVOLTAGEAVALANCHEZENERDIODES HIGHPERFORMANCE:LOWNOISE,LOWLEAKAGE 1.PackageStyleDO-7 2.SuffixdenotesVztolerance:nonsuffix±20,Asuffix±10:Ir@Vr1,Vz,+Vfonly.SuffixB±5:Ir@Vr2,Vz,DVz,Vf,ND. 3.Measuredwith10,60HzACsuperimposedonIzt. 4.Measuredfrom | KNOXKnox Semiconductor, Inc Knox Semiconductor, Inc |  | | |
LOWVOLTAGEAVALANCHEDIODESDO-35 FEATURES •LOWZENERNOISESPECIFIED •LOWZENERIMPEDANCE •LOWLEAKAGECURRENT •HERMETICALLYSEALEDGLASSPACKAGE •JAN/JANTX/JANTXVAVAILIBLEON1N5518-1TROUGH1N5546-1PERMIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOWREVERSELEAKAGECHARACTERISTICS •1N5518-1THRU1N5546B-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •LOWREVERSELEAKAGECHARACTERISTICS •LOWNOISECHARACTERISTICS •DOUBLEPLUGCONSTRUCTION •METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | | | |
LowVoltageSurfaceMount500mWAvalancheDiodes •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESSPACKAGEFORSURFACEMOUNTZENERDIODE,500mW •1N5518BUR-1THRU1N5546BUR-1AVAILABLEINJAN,JANTXANDJANTXVPERMIL-PRF-19500/437 •ZENERDIODE,500mW •LEADLESSPACKAGEFORSURFACEMOUNT •LOWREVERSELEAKAGECHARACTERISTICS •METALLURGICALLYBONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
包装：卷带（TR） 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
ZENERDIODE,500mW 文件：111.15 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N5539B产品属性
- 类型
描述
- 型号
1N5539B
- 制造商
Microsemi Corporation
- 功能描述
ZENER SGL 19V 5% 417MW 2PIN DO-204AA - Bulk
- 制造商
Microsemi Corporation
- 功能描述
DIODE ZENER 19V 500MW DO-35
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CDI-DIODE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROCHIP(美国微芯) |
23+ |
DO35 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
GE |
N/A |
2 |
|||||
MICROSEMI-美高森美 |
24+25+/26+27+ |
DO-35 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MICROSEMI |
2306+ |
MODULE |
519 |
优势代理渠道,原装现货,可全系列订货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
MICROSEMI |
1809+ |
DO-35 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
1N5539B芯片相关品牌
1N5539B规格书下载地址
1N5539B参数引脚图相关
- 4591
- 4536
- 4313
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- 3g汽车
- 3579
- 35001
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- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N5543A
- 1N5543
- 1N5542D
- 1N5542C
- 1N5542B
- 1N5542A
- 1N5542
- 1N5541D
- 1N5541C
- 1N5541B
- 1N5541A
- 1N5541
- 1N5540D
- 1N5540C
- 1N5540B
- 1N5540A
- 1N5540
- 1N554
- 1N5539UR-1
- 1N5539UR
- 1N5539TR-1
- 1N5539DURTR-1
- 1N5539DUR-1
- 1N5539DUR
- 1N5539DTR-1
- 1N5539D-1
- 1N5539D
- 1N5539CURTR-1
- 1N5539CUR-1
- 1N5539CUR
- 1N5539CTR-1
- 1N5539C-1
- 1N5539C
- 1N5539BURTR-1
- 1N5539BUR-1
- 1N5539BUR
- 1N5539BTR-1
- 1N5539B-1
- 1N5539AURTR-1
- 1N5539AUR-1
- 1N5539AUR
- 1N5539ATR-1
- 1N5539A-1
- 1N5539A
- 1N5539-1
- 1N5539
- 1N5538URTR-1
- 1N5538UR-1
- 1N5538UR
- 1N5538TR-1
- 1N5538DURTR-1
- 1N5538DUR-1
- 1N5538DUR
- 1N5538DTR-1
- 1N5538D-1
- 1N5538D
- 1N5538CURTR-1
- 1N5538CUR-1
- 1N5538C
- 1N5538B
- 1N5538A
- 1N5538
- 1N5537D
- 1N5537C
- 1N5537B
- 1N5537A
- 1N5537
- 1N5536D
- 1N5536C
- 1N5536B
- 1N5536A
- 1N5536
- 1N5535D
- 1N5535C
- 1N5535B
1N5539B数据表相关新闻
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2019-12-2
DdatasheetPDF页码索引
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