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型号 功能描述 生产厂家 企业 LOGO 操作
1N5536B

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5536B

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5536B

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

1N5536B

0.5W Zener Diode

Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.

SS

1N5536B

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:DIODE ZENER 16V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

1N5536B

Zener Diode Single 2-Pin 16V, 5%, 100Ohm, 500mW DO-35 Bag

MICROCHIP

微芯科技

1N5536B

LOW REVERSE LEAKAGE CHARACTERISTICS

文件:114.68 Kbytes Page:2 Pages

MICROSEMI

美高森美

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

0.5W 16V 5% Zener Diode

DIGITRON

Zener Diode Single 2-Pin 16V, 5%, 100Ohm, 500mW DO-213AA Bag

MICROCHIP

微芯科技

包装:卷带(TR) 描述:DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

ZENER DIODE, 500mW

文件:111.15 Kbytes Page:2 Pages

MICROSEMI

美高森美

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5536B产品属性

  • 类型

    描述

  • 型号

    1N5536B

  • 制造商

    Microsemi Corporation

  • 功能描述

    ZENER SGL 16V 5% 417MW 2PIN DO-204AA - Bulk

更新时间:2026-3-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology / Atmel
25+
N/A
6843
样件支持,可原厂排单订货!
Microchip Technology / Atmel
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
MSC
25+
200
公司现货
MIRCOS
DO
905
优势库存
MOTOROLA/摩托罗拉
25+
MODULE
495
主打螺丝模块系列
MICROCHIP
23+
7300
专注配单,只做原装进口现货
Microsemi
25+
电联咨询
7800
公司现货,提供拆样技术支持
MICROSEMI
25+
DO-35
1675
就找我吧!--邀您体验愉快问购元件!

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