位置：首页 > IC中文资料第599页 > 1N5534B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5534B | LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated |  |   |
1N5534B | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 |  | |
1N5534B | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N5534B | 0.5W Zener Diode Features Sharp Reverse Characteristics Low Reverse Current Levels High Reliability Gold Back Metal High Reliability Tested Grades. | SS Silicon Supplies |  | |
1N5534B | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE ZENER 14V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
1N5534B | LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGDJinan Gude Electronic Device 济南固锝电子济南固锝电子器件有限公司 | | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from | KNOX Knox Semiconductor, Inc |  | | |
LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE Compensated Deuices Incorporated | | | |
Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
包装：卷带（TR） 描述：DIODE ZENER 分立半导体产品 二极管 - 齐纳 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | | | |
ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N5534B产品属性
- 类型
描述
- 型号
1N5534B
- 制造商
Microsemi Corporation
- 功能描述
ZENER SGL 14V 5% 417MW 2PIN DO-204AA - Bulk
- 制造商
Microsemi Corporation
- 功能描述
Diode Zener Single 14V 5% 500mW 2-Pin DO-35
- 制造商
Microsemi Corporation
- 功能描述
DIODE ZENER 14V 500MW DO-35
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
DO35 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MSC |
2007/2008 |
41 |
公司现货 |
||||
Fairchild |
23+ |
33500 |
|||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
CDI-DIODE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROSS/ON |
1809+ |
模具 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
1N5534B芯片相关品牌
1N5534B规格书下载地址
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DdatasheetPDF页码索引
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