位置：首页 > IC中文资料第7078页 > 1N5533D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5533D | LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 |   | |
1N5533D | 0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | |
1N5533D | 0.5W 13V 1% Zener Diode This Zener Diode is packaged in DO-35, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | |
1N5533D | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
0.5W 13V 1% Zener Diode This Zener Diode is packaged in SOD-80, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | ||
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED | MICROSEMI 美高森美 | | ||
0.5W 13V 1% Zener Diode This Zener Diode is packaged in SOD-80, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish. | DIGITRON | | ||
封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单 | MICROCHIP 微芯科技 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package | JGD 固锝电子 | | ||
LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED | CDI-DIODE | |
1N5533D产品属性
- 类型
描述
- 型号
1N5533D
- 制造商
JGD
- 制造商全称
Jinan Gude Electronic Device
- 功能描述
0.4W LOW VOLTAGE AVALANCHE DIODES
1N5533D规格书下载地址
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DdatasheetPDF页码索引
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