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型号 功能描述 生产厂家 企业 LOGO 操作
1N5528A

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

1N5528A

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

1N5528A

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N5528A

Zener Diodes

FEATURES:• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXVPER MIL-PRF-19500/437• LOW REVERSE LEAKAGE CHARACTERISTICS• LOW NOISE CHARACTERISTICS• DOUBLE PLUG CONSTRUCTION• METALLURGICALLY BONDED

MICROCHIP

微芯科技

1N5528A

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

0.5W 8.2V 10% Zener Diode

This Zener Diode is packaged in SOD-80, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

MICROSEMI

美高森美

0.5W 8.2V 10% Zener Diode

This Zener Diode is packaged in SOD-80, which has a power dissipation of 0.5W.\n\n Available as High Reliability device as per MIL-PRF-19500/435 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

封装/外壳:DO-204AH,DO-35,轴向 包装:卷带(TR) 描述:VOLTAGE REGULATOR 分立半导体产品 二极管 - 齐纳 - 单

MICROCHIP

微芯科技

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE

LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from

KNOX

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

0.4W LOW VOLTAGE AVALANCHE DIODES

FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package

JGD

固锝电子

LOW REVERSE LEAKAGE CHARACTERISTICS

• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED

CDI-DIODE

1N5528A产品属性

  • 类型

    描述

  • 型号

    1N5528A

  • 制造商

    NJSEMI

  • 制造商全称

    New Jersey Semi-Conductor Products, Inc.

  • 功能描述

    LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES

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