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型号	功能描述	生产厂家企业	LOGO
1N5522	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5522	LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1. Package Style DO-7 2. Suffix denotes Vz tolerance: non suffix ±20, A suffix ±10: Ir @ Vr1, Vz, + Vf only. Suffix B ±5: Ir @ Vr2, Vz, DVz, Vf, ND. 3. Measured with 10, 60 Hz AC superimposed on Izt. 4. Measured from	KNOX	KNOX
1N5522	LOW VOLTAGE AVALANCHE DIODES DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437	Microsemi 美高森美	Microsemi
1N5522	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522	Low Voltage Avalanche 500 mW Zener Diodes DO-35 FEATURES • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT • HERMETICALLY SEALED GLASS PACKAGE • JAN/JANTX/JANTXV AVAILIBLE ON 1N5518-1 TROUGH 1N5546-1 PER MIL-S-19500/437	Microsemi 美高森美	Microsemi
1N5522	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N5522	Low Voltage Avalanche Zener	Microchip 微芯科技	Microchip
1N5522	封装/外壳：DO-204AH，DO-35，轴向包装：散装描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	Microchip 微芯科技	Microchip
1N5522	SCHOTTKY RECTIERS SILICON RECTIFIER DIODES 文件：48.9 Kbytes Page：1 Pages	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
1N5522-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522A	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5522A	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522A	LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHES SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 MILLIWATTS 3.3 THRU 33 VOLTS	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N5522A-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522AUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522AUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522B	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522B	LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED	CDI-DIODE	CDI-DIODE
1N5522B	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5522B	0.5W Zener Diode Features  Sharp Reverse Characteristics  Low Reverse Current Levels  High Reliability Gold Back Metal  High Reliability Tested Grades.	SS	SS
1N5522B-1	LOW REVERSE LEAKAGE CHARACTERISTICS • 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLYBONDED	CDI-DIODE	CDI-DIODE
1N5522B-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522BUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522BUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522BUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522C	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522C	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5522C-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522CUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522CUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522CUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522D	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522D	0.4W LOW VOLTAGE AVALANCHE DIODES FEATURES * Low zener noise specified * Low zener impedance * Low leakage current * Hermetically sealed glass package	JGD 固锝电子	JGD
1N5522D-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522DUR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522DUR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522DUR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522UR	Low Voltage Surface Mount 500 mW Avalanche Diodes • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522UR	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522UR-1	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW • 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED	Microsemi 美高森美	Microsemi
1N5522A	封装/外壳：DO-204AH，DO-35，轴向包装：卷带（TR）描述：VOLTAGE REGULATOR 分立半导体产品二极管 - 齐纳 - 单	Microchip 微芯科技	Microchip
1N5522AUR	0.5W 4.7V 10% Zener Diode	DIGITRON	DIGITRON
1N5522AUR-HR	0.5W 4.7V 10% Zener Diode	DIGITRON	DIGITRON
1N5522B	LOW REVERSE LEAKAGE CHARACTERISTICS 文件：114.68 Kbytes Page：2 Pages	Microsemi 美高森美	Microsemi
1N5522BUR-1	ZENER DIODE, 500mW 文件：111.15 Kbytes Page：2 Pages	Microsemi 美高森美	Microsemi

1N5522产品属性

类型
描述
型号
1N5522
功能描述
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES

1N5522供应商更多...

更新时间：2025-10-9 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	1N5522BUR-1/TR	MICROCHIP(美国微芯)	24+	DO213AA	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	1N5523B	APD	24+	NA/	44	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市威雅利发展有限公司	1N5523B	APD	10+	军品二级管	35	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
千层芯半导体(深圳)有限公司	1N5522BUR-1JANTX	MICROSEMI	24+	SMD	1680	MICROSEMI专营品牌进口原装现货假一赔十	询价
深圳市振宏微科技有限公司	1N5523B	MXD	23+	NA	682	专做原装正品,假一罚百!	询价
深圳市亿联芯电子科技有限公司	1N5523B	APD	2023+	NA	6893	十五年行业诚信经营,专注全新正品	询价
深圳市明嘉莱科技有限公司	1N5523B	MOTOROLA/摩托罗拉	25+	NA	880000	明嘉莱只做原装正品现货	询价
标准国际(香港)有限公司	1N5523B	MOT	9121		5	公司优势库存热卖中!	询价
深圳市鸿昌盛电子科技有限公司	1N5522BUR-1JANTX	MSC	2007/2008		161	公司现货	询价
深圳市赛美科科技有限公司	1N5523B	MOTOROLA		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价

1N5522芯片相关品牌

1N5522规格书下载地址

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1N5522数据表相关新闻

1N5819W
1N5819W
2024-3-6
1N5819HW-7-F
1N5819HW-7-F
2023-7-20
1N5401
1N5401，当天发货0755-82732291全新原装现货或门市自取.
2020-9-16
1N5822
1N5822，全新原装当天发货或门市自取0755-82732291.
2020-7-26
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技
1N5400TR，1SMA22CAT3G，2114-250A/225K，2322 640 兴中扬电子科技
2019-12-2
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC
2019-12-2

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1N5522产品属性

1N5522供应商更多...

1N5522芯片相关品牌

1N5522规格书下载地址

1N5522参数引脚图相关

1N5522数据表相关新闻

1N5819W

1N5819HW-7-F

1N5401

1N5822

1N5400TR，1SMA22CAT3G，2114-250A/225K，2322640兴中扬电子科技

1N5353B，专业军工IC，军工电子元器件销售，兴中扬电子，航空IC

DdatasheetPDF页码索引