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型号 功能描述 生产厂家 企业 LOGO 操作
1N5401K

Silicon Rectifiers

Silicon Rectifiers • Nominal current 3 A • Repetitive peak reverse voltage 50…1000 V • Plastic case DO-15 • Weight approx. 0.4 g • Plastic material has UL classification 94V-0

DIOTEC

德欧泰克

1N5401K

Standard silicon rectifier diodes

Standard silicon rectifier diodes 1N 5400 K 1N 5408 K Forward Current: 3 A Reverse Voltage: 50 to 1000 V

SEMIKRON

赛米控丹佛斯

1N5401K

SILICON RECTIFIERS

Features • Case: Molded plastic, DO-15. • Weight: 0.4g.

SEMTECH_ELEC

先之科半导体

1N5401K

Si-Rectifiers - Si-Gleichrichter

文件:100.22 Kbytes Page:2 Pages

DIOTEC

德欧泰克

1N5401K

Silicon Rectifier Diodes ??Silizium-Gleichrichterdioden

文件:96.15 Kbytes Page:2 Pages

DIOTEC

德欧泰克

1N5401K

Standard Recovery Rectifier Diodes

文件:91.31 Kbytes Page:2 Pages

DIOTEC

德欧泰克

1N5401K

Standard Recovery Rectifiers

DIOTEC

德欧泰克

STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERE

STANDARD RECOVERY RECTIFIERS 50–1000 VOLTS 3.0 AMPERE Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features: • High Current to Small Size • High Surge Current Capability • Low Forward Voltage

MOTOROLA

摩托罗拉

HIGH CURRENT PLASTIC SILICON RECTIFIER

TRSYS

Transys Electronics

3.0A SILICON RECTIFIER

- Diffused Junction - Low Forward Voltage Drop - High Current Capability - High Reliability - High Surge Current Capability

WTE

Won-Top Electronics

HIGH CURRENT PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 3.0 Ampere FEATURES • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • High current capability • Low leakage • Exceeds environmental standards of MIL-S-19500/228 • In c

PANJIT

強茂

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER

文件:23.54 Kbytes Page:2 Pages

RECTRON

丽正

1N5401K产品属性

  • 类型

    描述

  • Package:

    DO-15

  • VRRM:

    100 V

  • IFAV:

    3.00 A

  • Tjmax:

    175 °C

  • VF:

    1.10 V

  • IF:

    3.00 A

  • IFSM:

    100.00 A

  • IR:

    5.000 µA

  • Cj:

    pF

  • VR:

    V

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