位置：首页 > IC中文资料第2293页 > 1N5356B-TP
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N5356B-TP | 封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ZENER 19V 5W DO15 分立半导体产品 二极管 - 齐纳 - 单 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  |   |
5WSILICONZENERDIODES description 5WsiliconZenerdiodes. ■VOLTAGERANGE:3.3VTO200V ■HERMETICALLYSEALEDPLASTICCASE ■HIGHSURGECAPABILITY(upto180W@8.3ms) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
5WSILICONPLANARZENERDIODES FEATURES •Lowleakage,lowzenerimpedanceatlowcurrent •Maximumpowerdissipationof5Wisideallysuitedforstabilizedpowersupply,etc. •Hightemperaturesolderingguaranteed:260°C/10secondsatterminals •Standardzenervoltagetoleranceavailableis±20.Suffix“A” in | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 |  | | |
SILICONZENERDIODES VZ:3.3-200Volts PD:5Watts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | EIC EIC discrete Semiconductors |  | | |
5-WATTZENERREGULATORDIODES3.3-200VOLTS 5-WATTZENERREGULATORDIODES3.3-200VOLTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
SILICONZENERDIODES 文件：103.76 Kbytes Page：3 Pages | EIC EIC discrete Semiconductors | | |
1N5356B-TP产品属性
- 类型
描述
- 型号
1N5356B-TP
- 功能描述
稳压二极管 5.0W 19V
- RoHS
否
- 制造商
Vishay Semiconductors
- 齐纳电压
12 V
- 电压容差
5 %
- 电压温度系数
0.075 %/K
- 功率耗散
3 W
- 最大反向漏泄电流
3 uA
- 最大齐纳阻抗
7 Ohms
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
DO-214AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MCC |
24+ |
DO-15DO-204ACAxi |
7500 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
SUNMATE/森美特 |
24+ |
DO-15 |
60000 |
||||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SUNMATE/森美特 |
23+ |
DO-15 |
50000 |
全新原装正品现货,支持订货 |
|||
MICROSEMI |
1809+ |
T-18 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
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1N5356B-TP规格书下载地址
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DdatasheetPDF页码索引
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