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1N5331A

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

1N5331A

Diode Switching 1.4KV 22A 2-Pin DO-4

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

1N5331A产品属性

  • 类型

    描述

  • Peak Reverse Repetitive Voltage:

    1400V

  • Peak Reverse Current:

    10uA

  • Peak Non-Repetitive Surge Current:

    250A

  • Peak Forward Voltage:

    1.2@30AV

  • Operating Junction Temperature:

    -65 to 200°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Operating Temperature:

    200°C

  • Maximum Continuous Forward Current:

    22A

  • Configuration:

    Single

更新时间:2026-5-23 17:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROSEMI
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
23+
MODULE
8000
只做原装现货
IR
23+
MODULE
7000
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单

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