封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR） 描述：DIODE ZENER 3.9V 500MW DO35 分立半导体产品 二极管 - 齐纳 - 单

SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

LOW CURRENT OPERATION AT 250 uA

• 1N4614-1THRU 1N4627-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µA • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

LOW LEVEL ZENER DIODES LOW CURRENT: 250關A - LOW NOISE

1. Package Style DO-7 2. Vz tolerance: ± 5 3. Forward Voltage (VF) Maximum 1.0 Vdc (1N4614 – 1N4627 IF = 100 mA; 1N4099 – 1N4121 IF = 200 mA) 4. Noise Density measured from 1000 to 3000 Hz. 5. MILITARY SCREENING AVAILABLE

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50