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1N45价格
参考价格：￥0.1019
型号：1N4531,113 品牌：NXP 备注：这里有1N45多少钱，2025年最近7天走势，今日出价，今日竞价，1N45批发/采购报价，1N45行情走势销售排行榜，1N45报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N45 | GOLD BONDED GERMANIUM DIODE 文件：43.2 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
1N45 | GOLD BONDED GERMANIUM DIODES | ETC 知名厂家 | ETC | |
GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MILITARY SWITCHING DIODES MILITARY SWITCHING DIODES | Microsemi 美高森美 | | ||
MILITARY SWITCHING DIODES MILITARY SWITCHING DIODES | Microsemi 美高森美 | | ||
GERMANIUM DIODE Description: Germanium Diode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | Microsemi 美高森美 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Rectifier Silicon Rectifier 35A Avg. Up to 1200V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GERMANIUM DOIDES GERMANIUM DIODES | AAC | | ||
Silicon Rectifier Silicon Rectifier 35A Avg. Up to 1200V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON RECTIFIER [EDAL INDUSTRIES INC,] SILICON RECTIFIER | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SWITCHING DIODE FEATURES • 1N4531 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION | Microsemi 美高森美 | | ||
High-speed diodes | ETC 知名厂家 | ETC | | |
HIGH SPEED SWITCHING DIODES FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free | SYNSEMI | | ||
PERFORMANCE SPECIFICATION SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. | Microsemi 美高森美 | | ||
COMPUTER DIODE Switching
| Microsemi 美高森美 | | ||
SILICON EPITAXIAL PLANAR DIODES SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode | SEMTECH_ELEC 先之科半导体 | | ||
Switching diode Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching | ROHM 罗姆 | | ||
FAST RECTIFIER SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH SPEED SWITCHING DIODES FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free | EIC | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
High-speed diodes FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA. | NEXPERIA 安世 | | ||
Hermetically Sealed Features ● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 ● Metallurgically Bonded ● Hermetically Sealed ● Double Plug Construction | MA-COM | | ||
PERFORMANCE SPECIFICATION SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. | Microsemi 美高森美 | | ||
SWITCHING DIODE
| Microsemi 美高森美 | | ||
COMPUTER DIODE Switching
| Microsemi 美高森美 | | ||
COMPUTER DIODE
| Microsemi 美高森美 | | ||
HIGH SPEED SWITCHING DIODES FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free | SYNSEMI | | ||
High-speed diodes | ETC 知名厂家 | ETC | | |
HIGH SPEED SWITCHING DIODES FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free | EIC | | ||
SILICON EPITAXIAL PLANAR DIODES SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode | SEMTECH_ELEC 先之科半导体 | | ||
High-speed diodes FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA. | NEXPERIA 安世 | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Small Signal Devices SWITCHING DIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SWITCHING DIODE
| Microsemi 美高森美 | | ||
COMPUTER DIODE Switching
| Microsemi 美高森美 | | ||
FAST RECTIFIER Description: Fast Rectifier, 100mA | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
1N45产品属性
- 类型
描述
- 型号
1N45
- 功能描述
GOLD BONDED DIODES(Low forward voltage, low power consumption)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILDSEMICONDUCTOR |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FAIRCHILD |
1040+ |
DO-35 |
4200 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON |
24+ |
Axial Lead |
25000 |
ON全系列可订货 |
|||
FAIRCHILDSEMICONDUCTOR |
23+ |
NA |
99788 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Nexperia(安世) |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ONSEMI/安森美 |
25+ |
DO-35(SOD-27) |
32360 |
ONSEMI/安森美全新特价1N458A即刻询购立享优惠#长期有货 |
|||
MICROSEMI/美高森美 |
21+ |
DO35 |
120000 |
长期代理优势供应 |
|||
MIXE |
23+ |
NA |
39671 |
专做原装正品,假一罚百! |
1N45规格书下载地址
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1N45数据表相关新闻
1N4746A
进口代理
2022-8-291N4148WS CJ/长电 SOD323 支持原装现货订货，欢迎咨询
1N4148WS CJ/长电 SOD323
2021-3-81N4749A
1N4749A ，当天发货0755-82732291全新原装现货或门市自取.
2020-11-41N4148WS T4
商品目录 开关二极管 反向恢复时间（trr） 4ns 直流反向耐压（Vr） 100V 平均整流电流（Io） 150mA 正向压降（Vf） 1.25V @ 150mA
2020-10-261N4148W-7-F
製造商: Diodes Incorporated 產品類型: 二極管 - 通用、電源、開關 RoHS: 詳細資料 產品: Switching Diodes 安裝風格: SMD/SMT 封裝/外殼: SOD-123 峰值反向電壓: 100 V 最大衝擊電流: 2 A If - 順向電流: 300 mA 配置: Single 恢復時間: 4 ns Vf - 順向電壓: 1.25 V Ir - 反向電流: 1 uA 最低
2020-10-151N4729A公司大量全新现货随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-2-28
DdatasheetPDF页码索引
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