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1N45价格

参考价格:¥0.1019

型号:1N4531,113 品牌:NXP 备注:这里有1N45多少钱,2026年最近7天走势,今日出价,今日竞价,1N45批发/采购报价,1N45行情走势销售排行榜,1N45报价。
型号 功能描述 生产厂家 企业 LOGO 操作
1N45

GOLD BONDED GERMANIUM DIODE

文件:43.2 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1N45

GOLD BONDED GERMANIUM DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

ETCList of Unclassifed Manufacturers

未分类制造商

MILITARY SWITCHING DIODES

MILITARY SWITCHING DIODES

MICROSEMI

美高森美

MILITARY SWITCHING DIODES

MILITARY SWITCHING DIODES

MICROSEMI

美高森美

GERMANIUM DIODE

Description: Germanium Diode

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Diode and Rectifier Devices

22A,200V-1600V Standard Recovery Rectifier inDO-4 package

MICROCHIP

微芯科技

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

MICROSEMI

美高森美

SILICON POINT CONTACT MIXER DIODES

SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz.

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POINT CONTACT MIXER DIODES

SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz.

ETCList of Unclassifed Manufacturers

未分类制造商

GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V

MICROSEMI

美高森美

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V

MICROSEMI

美高森美

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V

MICROSEMI

美高森美

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Rectifier

Silicon Rectifier 35A Avg. Up to 1200V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V

MICROSEMI

美高森美

GOLD BONDED DIODES(Low forward voltage, low power consumption)

JEDEC DO-7 PACKAGE

ETCList of Unclassifed Manufacturers

未分类制造商

GERMANIUM DOIDES

GERMANIUM DIODES

AAC

SILICON RECTIFIER

[EDAL INDUSTRIES INC,] SILICON RECTIFIER

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon Rectifier

Silicon Rectifier 35A Avg. Up to 1200V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FAST RECTIFIER

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-speed diodes

ETC

知名厂家

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

ROHM

罗姆

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

EIC

Hermetically Sealed

Features ● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 ● Metallurgically Bonded ● Hermetically Sealed ● Double Plug Construction

MA-COM

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA.

NEXPERIA

安世

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

SYNSEMI

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode

SEMTECH_ELEC

先之科半导体

PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

MICROSEMI

美高森美

COMPUTER DIODE Switching

MICROSEMI

美高森美

SWITCHING DIODE

FEATURES • 1N4531 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION

MICROSEMI

美高森美

PERFORMANCE SPECIFICATION

SCOPE Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device.

MICROSEMI

美高森美

COMPUTER DIODE Switching

MICROSEMI

美高森美

COMPUTER DIODE

MICROSEMI

美高森美

SWITCHING DIODE

MICROSEMI

美高森美

SILICON EPITAXIAL PLANAR DIODES

SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode

SEMTECH_ELEC

先之科半导体

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

SYNSEMI

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Devices

SWITCHING DIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD68 (DO-34) package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 75 V •Repetitive peak reverse voltage: max. 75 V •Repetitive peak forward current: max. 450 mA.

NEXPERIA

安世

HIGH SPEED SWITCHING DIODES

FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA. • Pb / RoHS Free

EIC

High-speed diodes

ETC

知名厂家

FAST RECTIFIER

Description: Fast Rectifier, 100mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SWITCHING DIODE

MICROSEMI

美高森美

1N45产品属性

  • 类型

    描述

  • Peak Reverse Current:

    10@6VuA

  • Peak Non-Repetitive Surge Current:

    0.5A

  • Peak Forward Voltage:

    1V

  • Operating Junction Temperature:

    -65 to 100°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    80mW

  • Maximum Operating Temperature:

    100°C

  • Maximum Continuous Forward Current:

    0.1A

  • Configuration:

    Single

更新时间:2026-5-24 8:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
SOT23-3
9600
原装现货,优势供应,支持实单!
MICROSEMIIRE
26+
DO35
60000
只有原装,可配单
MICROSEMI/美高森美
25+
DO35
20000
原装
MICROSEMIIRE
25+
DO35
10000
全新原装现货库存
FAIRCHILD/仙童
24+
NA
250516
郑重承诺只做原装进口现货
MICROSEMI IR
21+
DO35
9800
NEXPERIA/安世
SOD68
23+
700000
授权代理/原厂FAE技术支持
MOT
23+
NA
20000
全新原装假一赔十
FAIRCHILD
1040+
DO-35
4200
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROSEMI
24+
SMD
1680
MICROSEMI专营品牌进口原装现货假一赔十

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