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1N4448价格
参考价格：￥0.0536
型号：1N4448 品牌：NXP 备注：这里有1N4448多少钱，2025年最近7天走势，今日出价，今日竞价，1N4448批发/采购报价，1N4448行情走势销售排行榜，1N4448报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1N4448 | SiliconEpitaxialPlanarDiodes FEATURES •Siliconepitaxialplanardiode •Electricallyequivalentdiodes:1N4148-1N914 •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Extremefastswitches | VishayVishay Siliconix 威世科技威世科技半导体 |  |   |
1N4448 | High-speeddiodes DESCRIPTION The1N4148,1N4446,1N4448arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES •Hermeticallysealedleadedglass SOD27(DO-35)package •Highswitchingspeed:max.4ns •Genera | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
1N4448 | Switchingdiode Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching | ROHMRohm 罗姆罗姆半导体集团 |  | |
1N4448 | SILICONEPITAXIALPLANARDIODE? Features SiliconEpitaxialPlanarDiodefastswitchingdiode. ThisdiodeisalsoavailableinMiniMELFcasewiththetypedesignationLL4448. | SEMTECHSemtech Corporation 升特 |  | |
1N4448 | SmallSignalDiode SmallSignalDiode | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
1N4448 | SMALLSIGNALSWITCHINGDIODE FEATURES •Siliconepitaxialplanardiode •Fastswithchingdiodes •500mWpowerdissipation •ThediodeisalsoavailableintheMini-MELFcasewiththetypedesignationLL4448 | CHENYIShanghai Lunsure Electronic Tech 商朗电子上海商朗电子科技有限公司 |  | |
1N4448 | FASTSWITCHINGDIODE Features •FastSwitchingSpeed •GeneralPurposeRectification •SiliconEpitaxialPlanarConstruction •LeadFreeFinish,RoHSCompliant(Note2) | DIODESDiodes Incorporated 美台半导体 |  | |
1N4448 | TECHNICALSPECIFICATIONSOFHIGHSPEEDSWITCHINGDIODES VOLTAGERANGE-50to100VoltsCURRENT-0.075to0.2Ampere FEATURES *Siliconepitaxialplanardiodes *Lowleakage *Lowforwardvoltage *Highspeedswitching *Highcurrentcapability *Highreliability *Lowpowerloss,highefficiency | DCCOM Dc Components |  | |
1N4448 | SmallSignalDiodes FEATURES ◆SiliconEpitaxialPlanarDiode ◆Fastswitchingdiode. ◆Thisdiodeisalsoavailableinothercasestylesincluding:theSOD-123casewiththetypedesignation1N4448W,theMiniMELFcasewiththetypedesignationLL4448,andtheSOT23casewiththetypedesignationIMBD4448. | GE GE Industrial Company |  | |
1N4448 | SILICONEPITAXIALPLANARDIODE Features SiliconEpitaxialPlanarDiodefastswitchingdiode. ThisdiodeisalsoavailableinMiniMELFcasewiththetypedesignationLL4448. | Good-Ark GOOD-ARK Electronics |  | |
1N4448 | COMPUTERDIODESwitching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
1N4448 | FastSwitchingDiode HighSpeed Features -FastSwitchingSpeed -GeneralPurposeRectification -SiliconEpitaxialPlanarConstruction | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | |
1N4448 | COMPUTERDIODESwitching
| MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
1N4448 | SiliconPlanarDiodes UltrafastRecoveryRectifierDiodes Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing, High-speedswitching Commercialgrade1) MechanicalDa | DiotecDiotec Semiconductor 德欧泰克 |  | |
1N4448 | Switchingdiode Features 1)Glasssealedenvelope.(MSD,GSD) 2)Highspeed. 3)Highreliability. Application High-speedswitching | ROHMRohm 罗姆罗姆半导体集团 | | |
1N4448 | SurfaceMountSwitchingDiodes SurfaceMountSwitchingDiodes Features: *SiliconEpitaxialPlannerDiode *FastSwitchingDiodes *500mWPowerDissipation | WEITRON Weitron Technology |  | |
1N4448 | High-speeddiodes DESCRIPTION The1N4148,1N4446,1N4448arehigh-speedswitchingdiodesfabricatedinplanartechnology,andencapsulatedinhermeticallysealedleadedglassSOD27(DO-35)packages. FEATURES •Hermeticallysealedleadedglass SOD27(DO-35)package •Highswitchingspeed:max.4ns •Genera | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
1N4448 | 500mWEPITAXIALPLANARDIODES Features ■SiliconEpitaxialPlanarDiode ■500mWPowerDissipation ■PbFreeproductareAvailable ■Bulk--2K,13T/R--10K,T/B--5KAmmoBox | FCIFirst Components International 戈采戈采企业股份有限公司 |  | |
1N4448 | SwitchingDioses Features •FastSwitchingSpeed •HighConductance •ElectricallyIdenticaltoStandardJEDEC •RoHScompliant | TAITRON TAITRON Components Incorporated |  | |
1N4448 | HIGHSPEEDSWITCHINGDIODES VOLTAGE：50-100VCURRENT：0.15to0.2A FEATURES •Siliconepitaxialplanardiodes •Lowpowerloss,highefficiency •Lowlekage •Lowforwardvoltagh •Highspeedswitching •Highcurrentcapability •Highreliability MECHANICALDATA •Case:Glasssealedcase •Lead:MIL-STD-202E,Metho | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 |  | |
1N4448 | FASTSWITCHINGSURFACEMOUNTDIODES VOLTAGE100VoltsPOWER500mW FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | |
1N4448 | 500mWHighSpeedSwitchingDiode FEATURES -Fastswitchingdevice(trr | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  | |
1N4448 | High-speeddiodes | ETC 知名厂家 | ETC | |
1N4448 | SMALLSIGNALSWITCHINGDIODE FEATURES ●Siliconepitaxialplanardiode ●Switchingdiodes ●500mwpowerdissipation ●Hightemperaturesolderingguaranteed250℃/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension | DIOTECH Diotech Company. |  | |
1N4448 | FASTSWITCHINGDIODES FEATURES •SiliconEpitaxialPlanarDiode •Fastswitchingdiode •Thisdiodeisalsoavailableinothercasestylesincluding:theSOD-123casewiththetypedesignation1N4448W,theMiniMELFcasewiththetypedesignationLL4448,andtheSOT23casewiththetypedesignation | MICMIC GROUP RECTIFIERS 昌福电子昌福电子有限公司 |  | |
1N4448 | HIGHCONDUCTANCEULTRAFASTSWITCHESDIFFUSEDSILICONPLANARDIODES HIGHCONDUCTANCEULTRAFASTSWITCHESDIFFUSEDSILICONPLANARDIODES •trr...4.0ns(MAX) •BV...100V(MIN) | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
1N4448 | High-speedswitchingdiode
| FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
1N4448 | 500mW100VoltSwitchingDiode Features •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •LowCurrentLeakage •MetalurgicallyBondedConstruction •LowCost •Marking:Cathodebandandtypenumber •MoistureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | |
1N4448 | SMALLSIGNALDIODE [SynSEMI] | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
1N4448 | High-speeddiodes FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •Highswitchingspeed:max.4ns •Generalapplication •Continuousreversevoltage:max.100V •Repetitivepeakreversevoltage:max.100V •Repetitivepeakforwardcurrent:max.450mA. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
1N4448 | SmallSignalFastSwitchingDiodes FEATURES •Siliconepitaxialplanardiodes •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Extremefastswitches | VishayVishay Siliconix 威世科技威世科技半导体 | | |
1N4448 | silicondiode SILICONDIODE | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | |
1N4448 | HIGHSPEEDSILICONSWITCHINGDIODESAXIALLEAD DESCRIPTION Generalpurpose,Industrial,Militaryandspaceapplications.Hermeticallysealedglasswithastudoneithersideoftheglasspassivatedchipprovidesexcellentstability.Extremelylowleakage&veryhighreliability | TELTokyo Electron Ltd. 东电电子东京电子有限公司 |  | |
1N4448 | SMALLSIGNALSWITCHINGDIODES Features •Siliconepitaxialplanardiode •Fastswitchingdiodes •500mWpowerdissipation •ThisdiodeisalsoavailableintheMini-MELFcasewiththetypedesignationLL4448 | DAESAN Daesan Electronics Corp. |  | |
1N4448 | SILICONSCHOTTKYDIODE DESCRIPTION TheCENTRALSEMICONDUCTOR1N4446seriestypesareveryhighspeedSiliconSwitchingDiodesdesignedforcomputerandgenera;purposeapplications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
1N4448 | SWITCHINGRECTIFIER SWITCHINGRECTIFIER AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors |  | |
1N4448 | HIGHSPEEDSILICONSWITCHINGDIODE Generalpurpose,Industrial,Militaryandspaceapplications.Hermeticallysealedglasswithastudoneithersideoftheglasspassivatedchipprovidesexcellentstability.Extremelylowleakage&veryhighreliability | CDIL Continental Device India Limited |  | |
1N4448 | 1N4448SIGNALDIODE SIGNALDIODE | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 |  | |
1N4448 | 150mAAxialLeadedFastSwitchingDiode Features ●FastSwitchingSpeed ●GeneralPurposeRectification ●SiliconEpitaxialPlanarConstruction | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | |
1N4448 | SiliconEpitaxialPlanarSwitchingDiode ThisdiodeisalsoavailableinMiniMELFcasewiththetypedesignationLL4448. Applications •High-speedswitching | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | |
1N4448 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4448 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4448 | SmallSignalDevices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
1N4448 | SILICONEPITAXIALPLANARDIODE 文件：301.31 Kbytes Page：2 Pages | | | |
1N4448 | 100VDetectionswitchtube 文件：301.204 Kbytes Page：2 Pages | | | |
1N4448 | SurfaceMountPackageIdeallySuitedForAutomaticInsertion 文件：103.56 Kbytes Page：2 Pages | HY HY ELECTRONIC CORP. |  | |
1N4448 | HIGHSPEEDSWITCHINGDIODE 文件：81.64 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors |  | |
1N4448 | 500mWDO-34HermeticallySealedGlassFastSwitchingDiodes 文件：309.51 Kbytes Page：2 Pages | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 |  | |
1N4448 | SILICONSWITCHINGDIODES 文件：60.43 Kbytes Page：2 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | |
1N4448 | SilicljeveplanarnesignalnediodeSiliconplanarsignaldiodes 文件：163.33 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | |
1N4448 | 封装/外壳：DO-204AH，DO-35，轴向 包装：散装 描述：DIODE GEN PURP 75V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
1N4448 | 封装/外壳：DO-204AH，DO-35，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 100V 200MA DO35 分立半导体产品 二极管 - 整流器 - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
1N4448 | Switchingdiode 文件：34.13 Kbytes Page：2 Pages | ROHMRohm 罗姆罗姆半导体集团 | | |
1N4448 | SmallSignalSwitchingDiodes 文件：137.44 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
1N4448 | 500mWEPITAXIALPLANARDIODES 文件：123.12 Kbytes Page：2 Pages | FCIFirst Components International 戈采戈采企业股份有限公司 | | |
1N4448 | UltrafastSwitchingSi-PlanarDiodes 文件：92.72 Kbytes Page：2 Pages | DiotecDiotec Semiconductor 德欧泰克 | | |
1N4448 | HIGHSPEEDSWITCHINGDIODE 文件：31.57 Kbytes Page：2 Pages | SYNSEMI SynSemi，Inc. |  | |
1N4448 | 500mW100VoltSwitchingDiode 文件：427.83 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
1N4448 | SMALLSIGNALSWITCHINGDIODE 文件：88.96 Kbytes Page：3 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
1N4448 | Switchingdiode 文件：50.11 Kbytes Page：3 Pages | ROHMRohm 罗姆罗姆半导体集团 | | |
1N4448产品属性
- 类型
描述
- 型号
1N4448
- 功能描述
二极管 - 通用，功率，开关 Hi Conductance Fast
- RoHS
否
- 制造商
STMicroelectronics
- 产品
Switching Diodes
- 峰值反向电压
600 V
- 正向连续电流
200 A
- 最大浪涌电流
800 A
- 恢复时间
2000 ns
- 正向电压下降
1.25 V
- 最大反向漏泄电流
300 uA
- 安装风格
SMD/SMT
- 封装/箱体
ISOTOP
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
7188 |
全新原装正品/价格优惠/质量保障 |
|||
Diodes(美台) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
DIODES |
2016+ |
SOD-323 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
VISHAY/威世 |
23+ |
SOD323 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开23%增 |
|||
PANJIT |
25+ |
SOD123 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NATIONAL |
24+/25+ |
20000 |
原装正品现货库存价优 |
||||
24+ |
SOD123 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
MCC |
21+ |
SOT23 |
43695 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
25+ |
SOD323 |
54000 |
原厂原装,价格优势 |
1N4448芯片相关品牌
1N4448规格书下载地址
1N4448参数引脚图相关
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- 1N4454
- 1N4453
- 1N4452
- 1N4451
- 1N4450
- 1N444B
- 1N4449
- 1N4448X
- 1N4448W-HE3-08
- 1N4448W-GS08
- 1N4448W-E3-08
- 1N4448W-7-F/BKN
- 1N4448W-7-F
- 1N4448W
- 1N4448TR
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- 1N4448HWT-7-CUTTAPE
- 1N4448HWT-7
- 1N4448HWS-7-F/BKN
- 1N4448HWS-7-F
- 1N4448HWS-7
- 1N4448HLP-7/BKN
- 1N4448HLP-7
- 1N4448_R2_10001
- 1N4448,143
- 1N4448,133
- 1N4448,113
- 1N4447
- 1N4446
- 1N4444
- 1N4441
- 1N443B
- 1N4438
- 1N4437
- 1N4436FT
- 1N4436
- 1N4435B
- 1N442B
- 1N4426B
- 1N4426
- 1N4425B
- 1N4425
- 1N4424B
- 1N4424
- 1N4423B
- 1N4423
- 1N4422B
- 1N4422
- 1N4385GP-E3/54
- 1N4385GP/4
- 1N4384GP-E3/54
- 1N4384GP
- 1N4384
- 1N4383GP-E3/54
- 1N4371A
- 1N4370A
- 1N4249GP-E3/54
- 1N4249
- 1N4248GP-E3/54
- 1N4247GPHE3/54
- 1N4247GP-E3/54
- 1N4246GP-E3/54
- 1N4154TR
- 1N4154TAP
- 1N4154
1N4448数据表相关新闻
1N4746A
进口代理
2022-8-291N4148WS CJ/长电 SOD323 支持原装现货订货，欢迎咨询
1N4148WSCJ/长电SOD323
2021-3-81N4749A
1N4749A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-41N4148WS T4
商品目录开关二极管 反向恢复时间（trr）4ns 直流反向耐压（Vr）100V 平均整流电流（Io）150mA 正向压降（Vf）1.25V@150mA
2020-10-261N4148W-7-F
製造商:DiodesIncorporated 產品類型:二極管-通用、電源、開關 RoHS:詳細資料 產品:SwitchingDiodes 安裝風格:SMD/SMT 封裝/外殼:SOD-123 峰值反向電壓:100V 最大衝擊電流:2A If-順向電流:300mA 配置:Single 恢復時間:4ns Vf-順向電壓:1.25V Ir-反向電流:1uA 最低
2020-10-151N4729A公司大量全新现货随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-2-28
DdatasheetPDF页码索引
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