Silicon Epitaxial Planar Diodes

FEATURES • Silicon epitaxial planar diode • Electrically equivalent diodes: 1N4148 - 1N914 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

High-speed diodes

DESCRIPTION The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • Genera

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

SILICON EPITAXIAL PLANAR DIODE?

Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448.

Small Signal Diode

Small Signal Diode

SMALL SIGNAL SWITCHING DIODE

FEATURES • Silicon epitaxial planar diode • Fast swithching diodes • 500mW power dissipation • The diode is also available in the Mini-MELF case with the type designation LL4448

FAST SWITCHING DIODE

Features • Fast Switching Speed • General Purpose Rectification • Silicon Epitaxial Planar Construction • Lead Free Finish, RoHS Compliant (Note 2)

TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES

VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES * Silicon epitaxial planar diodes * Low leakage * Low forward voltage * High speed switching * High current capability * High reliability * Low power loss, high efficiency

Small Signal Diodes

FEATURES ◆ Silicon Epitaxial Planar Diode ◆ Fast switching diode. ◆ This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448.

SILICON EPITAXIAL PLANAR DIODE

Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448.

COMPUTER DIODE Switching

Fast Switching Diode

High Speed Features - Fast Switching Speed - General Purpose Rectification - Silicon Epitaxial Planar Construction

COMPUTER DIODE Switching

Silicon Planar Diodes

Ultrafast Recovery Rectifier Diodes Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, High-speed switching Commercial grade 1) Mechanical Da

Switching diode

Features 1) Glass sealed envelope. (MSD, GSD) 2) High speed. 3) High reliability. Application High-speed switching

Surface Mount Switching Diodes

Surface Mount Switching Diodes Features: * Silicon Epitaxial Planner Diode * Fast Switching Diodes * 500 mW Power Dissipation

High-speed diodes

DESCRIPTION The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 4 ns • Genera

500 mW EPITAXIAL PLANAR DIODES

Features ■ Silicon Epitaxial Planar Diode ■ 500mW Power Dissipation ■ Pb Free product are Available ■ Bulk--2K, 13 T/R--10K, T/B--5K Ammo Box

Switching Dioses

Features • Fast Switching Speed • High Conductance • Electrically Identical to Standard JEDEC • RoHS compliant

HIGH SPEED SWITCHING DIODES

VOLTAGE：50-100V CURRENT：0.15 to 0.2 A FEATURES • Silicon epitaxial planar diodes • Low power loss, high efficiency • Low lekage • Low forward voltagh • High speed switching • High current capability • High reliability MECHANICAL DATA • Case:Glass sealed case • Lead: MIL-STD- 202E, Metho

FAST SWITCHING SURFACE MOUNT DIODES

VOLTAGE 100 Volts POWER 500 mW FEATURES • Fast switching Speed. • Surface Mount Package Ideally Suited For Automatic Insertion. • Silicon Epitaxal Planar Construction. • In compliance with EU RoHS 2002/95/EC directives

500mW High Speed Switching Diode

FEATURES - Fast switching device (trr

High-speed diodes

SMALL SIGNAL SWITCHING DIODE

FEATURES ● Silicon epitaxial planar diode ● Switching diodes ● 500mw power dissipation ● High temperature soldering guaranteed 250℃/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

FAST SWITCHING DIODES

FEATURES • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation

HIGH CONDUCTANCE ULTRA FAST SWITCHES DIFFUSED SILICON PLANAR DIODES

HIGH CONDUCTANCE ULTRA FAST SWITCHES DIFFUSED SILICON PLANAR DIODES • trr ... 4.0 ns (MAX) • BV ... 100 V (MIN)

High-speed switching diode

500mW 100Volt Switching Diode

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Current Leakage • Metalurgically Bonded Construction • Low Cost • Marking : Cathode band and type number • Moisture Sensitivity Level 1

SMALL SIGNAL DIODE

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silicon diode

SILICON DIODE

HIGH SPEED SILICON SWITCHING DIODES AXIAL LEAD

DESCRIPTION General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud on either side of the glass passivated chip provides excellent stability. Extremely low leakage & very high reliability

SMALL SIGNAL SWITCHING DIODES

Features • Silicon epitaxial planar diode • Fast switching diodes • 500mW power dissipation • This diode is also available in the Mini-MELF case with the type designation LL4448

SILICON SCHOTTKY DIODE

DESCRIPTION The CENTRAL SEMICONDUCTOR 1N4446 series types are very high speed Silicon Switching Diodes designed for computer and genera; purpose applications.

SWITCHING RECTIFIER

SWITCHING RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

HIGH SPEED SILICON SWITCHING DIODE

General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud on either side of the glass passivated chip provides excellent stability. Extremely low leakage & very high reliability

1N4448 SIGNAL DIODE

SIGNAL DIODE

150mA Axial Leaded Fast Switching Diode

Features ● Fast Switching Speed ● General Purpose Rectification ● Silicon Epitaxial Planar Construction

Silicon Epitaxial Planar Switching Diode

This diode is also available in MiniMELF case with the type designation LL4448. Applications • High-speed switching

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

Small Signal Devices

SWITCHING DIODES

High-speed diodes

FEATURES •Hermetically sealed leaded glass SOD27 (DO-35) package •High switching speed: max. 4 ns •General application •Continuous reverse voltage: max. 100 V •Repetitive peak reverse voltage: max. 100 V •Repetitive peak forward current: max. 450 mA.

Small Signal Fast Switching Diodes

FEATURES • Silicon epitaxial planar diodes • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches

100V Detection switch tube

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SILICON EPITAXIAL PLANAR DIODE

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Surface Mount Package Ideally Suited For Automatic Insertion

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Switching diode

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500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes

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Small Signal Switching Diodes

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HIGH SPEED SWITCHING DIODE

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Small Signal Switching Diodes

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Silicon Epitaxial Planar Switching Diode

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Small Signal Diode

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Switching diode

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SMALL SIGNAL DIODE

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High-speed switching diode

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500 mW EPITAXIAL PLANAR DIODES

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Ultrafast Switching Si-Planar Diodes

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HIGH SPEED SWITCHING DIODE

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500mW 100Volt Switching Diode

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