LOW CURRENT OPERATION AT 250 uA

• 1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LOW CURRENT OPERATION AT 250 µ A • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • METALLURGICALLY BONDED

Zener 1.5W DIODE

• Zener voltage available from 12V to 100V •Sharp Zener knee •Metallurgically bonded

500 mW power handling

Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435 • Tight tolerances available in plus or minus 2 or 1 with C or D suffix respectively. • 500 mW power handling • Hermetically sealed axial-leaded glass DO-35 package. • Also available in DO-213 MELF style package.

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

SILICON 500mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 µA • METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50