位置：首页 > IC中文资料第2489页 > 1N3766
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N3766 | Military Silicon Power Rectifier HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 • Glass Passivated Die • Glass to Metal Seal Construction • 500 Amps Surge Rating • VRRM to 1000 Volts | Microsemi 美高森美 |   | |
1N3766 | Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | Microsemi 美高森美 | | |
1N3766 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC | VishayVishay Siliconix 威世威世科技公司 | | |
1N3766 | Silicon-Power Rectifiers Silicon-Power Rectifiers • Nominal current 35 A • Repetitive peak reverse voltage 50 ~ 1000 V • Metal case DO-5 • Weight approx. 6 g • Standard polarity: Cathode to stud • Index R: Anode to stud • Standard packaging: bulk | Diotec 德欧泰克 | | |
1N3766 | 35,40,and 60 Amp Power Silicon Rectifier Diodes 35,40,and 60 Amp Power Silicon Rectifier Diodes | IRF | | |
1N3766 | Silicon Power Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N3766 | Fast Rectifier Silicon Power Rectifier • Glass Passivated Die • 800A surge rating • Glass to metal construction • VRRM to 1000V | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N3766 | STANDARD RECOVERY RECTIFIER STANDARD RECOVERY RECTIFIER | DIGITRON | | |
1N3766 | 包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | Microchip 微芯科技 | | |
1N3766 | 封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：DIODE GEN PURP 800V 35A DO5 分立半导体产品 二极管 - 整流器 - 单 | GENESIC | | |
1N3766 | Diode Modules | DACO 罡境电子 | | |
1N3766 | Diode and Rectifier Devices | Microchip 微芯科技 | | |
1N3766 | Standard Recovery Rectifiers | Navitas 纳微半导体 | | |
1N3766 | Silicon Standard Recovery Diode 文件：705.39 Kbytes Page：3 Pages | GENESIC | | |
1N3766 | Silicon Standard Recovery Diode 文件：728.19 Kbytes Page：3 Pages | GENESIC | | |
1N3766 | Silicon-Power-Rectifiers 文件：129.13 Kbytes Page：2 Pages | Diotec 德欧泰克 | | |
1N3766 | Power Silicon Rectifier Diodes, 35 A/40 A/60 A 文件：297.27 Kbytes Page：8 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
1N3766 | Silicon Power Rectifier 文件：132.23 Kbytes Page：2 Pages | Microsemi 美高森美 | | |
1N3766 | HIGH RELIABILITY SILICON POWER RECTIFIER 文件：123.92 Kbytes Page：3 Pages | Microsemi 美高森美 | | |
1N3766 | Silicon Standard Recovery Diode 文件：768.96 Kbytes Page：3 Pages | GENESIC | | |
Military Silicon Power Rectifier HIGH RELIABILITY SILICON POWER RECTIFIER Qualified per MIL-PRF-19500/297 • Glass Passivated Die • Glass to Metal Seal Construction • 500 Amps Surge Rating • VRRM to 1000 Volts | Microsemi 美高森美 | | ||
Silicon Standard Recovery Diode 文件：768.96 Kbytes Page：3 Pages | GENESIC | | ||
HIGH RELIABILITY SILICON POWER RECTIFIER 文件：123.92 Kbytes Page：3 Pages | Microsemi 美高森美 | | ||
Silicon Standard Recovery Diode 文件：728.19 Kbytes Page：3 Pages | GENESIC | |
1N3766产品属性
- 类型
描述
- 型号
1N3766
- 功能描述
整流器 800V 35A Std. Recovery
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ASI |
24+ |
NO |
2 |
||||
MSC |
2023+ |
MODULE |
2358 |
主打螺丝模块系列 |
|||
IR |
23+ |
7000 |
|||||
IR |
专业铁帽 |
DO-5 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
IR |
22+ |
DO-5 |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
专业铁帽 |
DO-5 |
1400 |
原装铁帽专营,代理渠道量大可订货 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
|||
IR |
24+ |
DO-5 |
1400 |
原装现货假一罚十 |
1N3766规格书下载地址
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1N3766数据表相关新闻
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正品
2019-3-1
DdatasheetPDF页码索引
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