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1N367价格
参考价格：￥22.3389
型号：1N3671A 品牌：GeneSiC 备注：这里有1N367多少钱，2025年最近7天走势，今日出价，今日竞价，1N367批发/采购报价，1N367行情走势销售排行榜，1N367报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N367 | GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 | IRF | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
Silicon-Power Rectifiers Silicon-Power Rectifiers Nominal current – Nennstrom 12 A Repetitive peak reverse voltage 50...1000 V Weight approx. – Gewicht ca. 5.5 g Recommended mounting torque 18 ± 10 lb.in. Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R) | Diotec 德欧泰克 | | ||
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 | IRF | | ||
Military Silicon Power Rectifier Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
MILITARY SILICON POWER RECTIFIER Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive | GENESIC | | ||
Silicon Standard Recovery Diode [GeneSiC Semiconductor, Inc.] Features • High Surge Capability • Types up to 1000 V VRRM | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MILITARY SILICON POWER RECTIFIER Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
Military Silicon Power Rectifier Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 | IRF | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon-Power Rectifiers Silicon-Power Rectifiers Nominal current – Nennstrom 12 A Repetitive peak reverse voltage 50...1000 V Weight approx. – Gewicht ca. 5.5 g Recommended mounting torque 18 ± 10 lb.in. Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R) | Diotec 德欧泰克 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 | IRF | | ||
MILITARY SILICON POWER RECTIFIER Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
Military Silicon Power Rectifier Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V | Microsemi 美高森美 | | ||
Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
MILITARY SILICON POWER RECTIFIER Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
High Surge Capability Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive | GENESIC | | ||
Silicon Standard Recovery Diode [GeneSiC Semiconductor, Inc.] Features • High Surge Capability • Types up to 1000 V VRRM | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Military Silicon Power Rectifier Military Silicon Power Rectifier • Available in JAN, JANTX and JANTXV • MIL-PRF-19500/260 • Glass passivated die • Glass to metal seal construction • 240 Amps surge rating • VRRM to 1000 volts | Microsemi 美高森美 | | ||
1.0W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3675B series silicon zener diode is a high quality voltage regulator for use in automotive, industrial, commercial, entertainment, and computer applications. | Central | | ||
1.0W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3675B series silicon zener diode is a high quality voltage regulator for use in automotive, industrial, commercial, entertainment, and computer applications. | Central | | ||
1.0W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3675B series silicon zener diode is a high quality voltage regulator for use in automotive, industrial, commercial, entertainment, and computer applications. | Central | | ||
1.0W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3675B series silicon zener diode is a high quality voltage regulator for use in automotive, industrial, commercial, entertainment, and computer applications. | Central | | ||
1.0W ZENER DIODE 6.8 VOLTS TO 200 VOLTS 5 TOLERANCE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N3675B series silicon zener diode is a high quality voltage regulator for use in automotive, industrial, commercial, entertainment, and computer applications. | Central | | ||
STANDARD RECOVERY RECTIFIERS 文件：162.15 Kbytes Page：3 Pages | DIGITRON | | ||
STANDARD RECOVERY RECTIFIERS 文件：162.15 Kbytes Page：3 Pages | DIGITRON | | ||
封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | Microchip 微芯科技 | | ||
Diode and Rectifier Devices | Microchip 微芯科技 | | ||
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES | Infineon 英飞凌 | | ||
Medium Power Silicon Rectifier Diodes, 12 A 文件：152.93 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Standard Rectifier (trr more than 500ns) | Microchip 微芯科技 | | ||
封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | Microchip 微芯科技 | | ||
STANDARD RECOVERY RECTIFIERS 文件：162.15 Kbytes Page：3 Pages | DIGITRON | | ||
Silicon-Power-Rectifiers 文件：128.289 Kbytes Page：2 Pages | Diotec 德欧泰克 | | ||
Medium Power Silicon Rectifier Diodes, 12 A 文件：152.93 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon Standard Recovery Diode 文件：773.21 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：781.2 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：781.2 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：773.21 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：773.21 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：781.2 Kbytes Page：3 Pages | GENESIC | | ||
STANDARD RECOVERY RECTIFIERS 文件：162.15 Kbytes Page：3 Pages | DIGITRON | | ||
Medium Power Silicon Rectifier Diodes, 12 A 文件：152.93 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
STANDARD RECOVERY RECTIFIERS 文件：162.15 Kbytes Page：3 Pages | DIGITRON | | ||
Silicon-Power-Rectifiers 文件：128.289 Kbytes Page：2 Pages | Diotec 德欧泰克 | | ||
Medium Power Silicon Rectifier Diodes, 12 A 文件：152.93 Kbytes Page：6 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Silicon Standard Recovery Diode 文件：781.2 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Standard Recovery Diode 文件：773.21 Kbytes Page：3 Pages | GENESIC | |
1N367产品属性
- 类型
描述
- 型号
1N367
- 功能描述
GOLD BONDED DIODES(Low forward voltage, low power consumption)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
|||
VishayIR |
24+ |
DO-4Stud(DO-203AA |
16 |
||||
MSC |
2023+ |
MODULE |
1190 |
主打螺丝模块系列 |
|||
VishayPCS |
新 |
14 |
全新原装 货期两周 |
||||
MSC |
25+ |
163 |
公司现货 |
||||
MOTO |
DO-4 |
1211 |
军品IC |
||||
IR |
23+ |
MODULE |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
MODULE |
7000 |
||||
Microchip Technology |
25+ |
DO-4(DO-203AA) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
1N367规格书下载地址
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1N367数据表相关新闻
1EDN7550UXTSA1
1EDN7550UXTSA1
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1EDI40I12AFXUMA1 栅极驱动IC
2023-3-11EDI40I12AFXUMA1 全新原装正品 现货
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2019-9-21N4007RLG公司大量全新现货随时可以发货
正品
2019-3-1
DdatasheetPDF页码索引
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