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型号	功能描述	生产厂家企业	LOGO
1N19	Schottky Barrier Rectifiers Reverse Voltage 20 to 40 Volts Forward Current 1.0 Ampere Reverse Voltage 20 to 40 Volts Forward Current 1.0 Ampere Features ◆ Low power loss, high efficiency ◆ Low leakage ◆ Low forward voltage ◆ High current capability ◆ High speed switching ◆ High surge capabitity ◆ High reliability	GOOD-ARK 固锝电子	GOOD-ARK
1N19	1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High Efficiency and High Current Capability • Low Forward Voltage Drop and Low Power loss • Metal Silicon junction, majority carrier conduction • Epoxy meets UL 94 V-0 flamm	MCC	MCC
1N19	SCHOTTKY BARRIER RECTIFIER DIODES VOLTAGE RANGE: 20 - 40V CURRENT: 1.0 A Features ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop,low switching losses ● High surge capability ● Foruse inlowvoltage,high frequencyinvertersfree ● wheeling,and polarity protection applications	SUNMATE 森美特	SUNMATE
1N19	1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts Features ● High Current Capability ● Low Power loss ● High Efficiency ● Low Forward Voltage Drop ● Metal Silicon junction, majority carrier conduction	CHENYI 商朗电子	CHENYI
1N19	CURRENT 1.0Ampere VOLTAGE 20 to 40 Volts Features • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For use in low voltage, high freq	DAESAN	DAESAN
1N19	SHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal silicon junction ,majority carrier conduction • Low power loss ,high efficiency • High current capability ,Low forward voltage dro	JINANJINGHENG 晶恒集团	JINANJINGHENG
1N19	SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 40 Volts Forward current – 1.0 Amperes Features • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters,	SEMTECH_ELEC 先之科半导体	SEMTECH_ELEC
1N19	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss,high efficiency ♦ High curren	SY 顺烨电子	SY
1N19	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Metal silicon junction,majority carrier conduction ♦ Guardring for overvoltage protection ♦ Low power loss,high efficiency ♦ High curren	SHUNYE 顺烨电子	SHUNYE
1N19	SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current -1.0 Ampere FEATURES ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Metal silicon junction,majority carrier conduction ◆ Guardring for overvoltage protection ◆ Low power loss,high efficiency ◆ High current	CHENDA 辰达半导体	CHENDA
1N19	SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection appli	DSK	DSK
1N19	MINIATURE SCHOTTKY BARRIER RECTIFIER 文件：310.5 Kbytes Page：2 Pages	KOOCHIN 灏展电子	KOOCHIN
1N19	SCHOTTKY BARRIER RECTIFIER 文件：53.74 Kbytes Page：2 Pages	JINANJINGHENG 晶恒集团	JINANJINGHENG
1N19	MINIATURE SCHOTTKY BARRIER RECTIFIER 文件：239.9 Kbytes Page：3 Pages	HORNBY 南通康比电子	HORNBY
1N19	肖特基二极管	MCC	MCC
1N19	SCHOTTKY BARRIER RECTIFIER 文件：330.31 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N19	1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts 文件：679.01 Kbytes Page：3 Pages	MCC	MCC
1N19	SCHOTTKY BARRIER RECTIFIER 文件：23.38 Kbytes Page：2 Pages	RECTRON 丽正	RECTRON
1N19	SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere 文件：262.23 Kbytes Page：3 Pages	RECTRON 丽正	RECTRON
1N191	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N191	Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) [BKC International Electronics Inc.] GOLD BONDED DIODES	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N191	SWITCHING DIODE SWITCHING DIODE	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N192	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N194	silicon diode SILICON DIODE	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N195	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N195	silicon diode SILICON DIODE	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N196	silicon diode SILICON DIODE	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N198	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N198	GERMANJUM DIODE Description: Germanjum Diode	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N198	MEDIUM AND LOW VOLTAGE GERMANIUM DIODES MEDIUM AND LOW VOLTAGE GERMANIUM DIODES	AMMSEMI	AMMSEMI
1N198A	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N198B	GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N1956B	Ref/Reg Diode 文件：71.3 Kbytes Page：1 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N1956B	Ref/Reg Diode	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
1N198	GERMANJUM DIODE	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI

1N19产品属性

类型
描述
VRM (V)：
40
IFSM (A)：
25
IF (A)：
1.0
VF (V)：
0.6
IFM (A)：
1.0
TRR (μs)：
IR (μA)：
500
@VR (V)：
40
Package Qty：
Tape
FIT：
48; Tj=100℃

1N19供应商更多...

更新时间：2026-8-1 16:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	1N191	ITT	25+		14		询价
深圳市安富世纪电子有限公司	1N1925	IR	23+		8000	只做原装现货	询价
天津市博通航睿技术有限公司	1N1925	IR	23+		7000		询价
深圳市豪迈兴电子有限公司	1N1959	MOT	2602+	CAN3	5323	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市河锋鑫科技有限公司	1N1922	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳新景润电子科技有限公司	1N19	群鑫	22+	R-1	30815	原装正品一级代理	询价

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DdatasheetPDF页码索引

P1
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找IC，尽在114IC

1N19产品属性

1N19供应商更多...

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1N19规格书下载地址

1N19参数引脚图相关

1N19数据表相关新闻

1EDN7550UXTSA1

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1EDI40I12AFXUMA1 全新原装正品 现货

1N4001

1N4007

1N4007RLG公司大量全新现货随时可以发货

DdatasheetPDF页码索引

1EDI40I12AFXUMA1 全新原装正品现货