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1N14价格
参考价格：￥3.4491
型号：1N14 品牌：Apem 备注：这里有1N14多少钱，2026年最近7天走势，今日出价，今日竞价，1N14批发/采购报价，1N14行情走势销售排行榜，1N14报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
SILICON POWER RECTIFIER Silicon Power Rectifier • Glass Passivated Die • 1600 Amps Surge Rating • Glass to metal construction • VRRM to 1400 V | MICROSEMI 美高森美 | | ||
High Current Rectifier VRRM = 50-600V, IF(AV) = 100 A ,VF = 1.2V | TEL | | ||
High Current Rectifier VRRM = 50-600V, IF(AV) = 100 A ,VF = 1.2V | TEL | | ||
Diode and Rectifier Devices 100A,50V-1400V Silicon rectifier in DO8 package | MICROCHIP 微芯科技 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier • Glass Passivated Die • 1600 Amps Surge Rating • Glass to metal construction • VRRM to 1400 V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier • Glass Passivated Die • 1600 Amps Surge Rating • Glass to metal construction • VRRM to 1400 V | MICROSEMI 美高森美 | | ||
Diode and Rectifier Devices 100A,50V-1400V Silicon rectifier in DO8 package | MICROCHIP 微芯科技 | | ||
High Current Rectifier VRRM = 50-600V, IF(AV) = 100 A ,VF = 1.2V | TEL | | ||
High Current Rectifier VRRM = 50-600V, IF(AV) = 100 A ,VF = 1.2V | TEL | | ||
Diode and Rectifier Devices 100A,50V-1400V Silicon rectifier in DO8 package | MICROCHIP 微芯科技 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier • Glass Passivated Die • 1600 Amps Surge Rating • Glass to metal construction • VRRM to 1400 V | MICROSEMI 美高森美 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Rectifiers Silicon Power Rectifiers 18 AMP - DO5 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● 800A surge rating ● Glass to metal seal construction ● VRRM to 1200V | MICROSEMI 美高森美 | | ||
MECHANICAL Diode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MECHANICAL Diode | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
GOLD BONDED DIODES(Low forward voltage, low power consumption) JEDEC DO-7 PACKAGE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | ||
封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Silicon Power Rectifier 文件：120.31 Kbytes Page：3 Pages | MICROSEMI 美高森美 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14BX is a one chip transistor with built-in bias resistor,PNP type is RT1P14BX. FEATURE ◾ Built-in bias resistor (R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14BX is a one chip transistor with built-in bias resistor,PNP type is RT1P14BX. FEATURE ◾ Built-in bias resistor (R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14BX is a one chip transistor with built-in bias resistor,PNP type is RT1P14BX. FEATURE ◾ Built-in bias resistor (R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14BX is a one chip transistor with built-in bias resistor,PNP type is RT1P14BX. FEATURE ◾ Built-in bias resistor (R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N14HX is a one chip transistor with built-in bias resistor,PNP type is RT1P14HX. FEATURE ◾ Built-in bias resistor (R1=10kΩ ,R2=4.7kΩ ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | |
1N14产品属性
- 类型
描述
- 型号
1N14
- 功能描述
1N CAP TRANSLUCENT YELLOW
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
25+ |
MODULE |
3382 |
主打螺丝模块系列 |
|||
NO |
24+ |
NO |
15 |
||||
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
NS |
专业铁帽 |
DO-13 |
1 |
原装铁帽专营,代理渠道量大可订货 |
|||
MICROSEMI/美高森美 |
23+ |
3650 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
26+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
25+ |
2 |
|||||
N/A |
24+/25+ |
11 |
原装正品现货库存价优 |
1N14规格书下载地址
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1N14数据表相关新闻
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DdatasheetPDF页码索引
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