| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N1341A | SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 |   | |
1N1341A | Rectifiers STUD BASE RECTIFIERS (D04 CASE) I0 RATINGS TO 6.0 AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
1N1341A | Diode and Rectifier Devices 16A,200-1200V Standard Recovery Rectifier in DO-4 package | MICROCHIP 微芯科技 | | |
1N1341A | 封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | |
封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单 | MICROCHIP 微芯科技 | | ||
Diode 50V 16A 2-Pin DO-4 T/R | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Rectifiers STUD BASE RECTIFIERS (D04 CASE) I0 RATINGS TO 6.0 AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Rectifiers STUD BASE RECTIFIERS (D04 CASE) I0 RATINGS TO 6.0 AMPERES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SILICON POWER RECTIFIER Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V | MICROSEMI 美高森美 | |
1N1341A产品属性
- 类型
描述
- Peak Reverse Current：
10uA
- Peak Non-Repetitive Surge Current：
200A
- Peak Forward Voltage：
1.3@30AV
- Operating Junction Temperature：
-65 to 200°C
- Minimum Operating Temperature：
-65°C
- Maximum Operating Temperature：
200°C
- Maximum Continuous Forward Current：
16A
- Configuration：
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
1N1341A规格书下载地址
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1N1341A数据表相关新闻
1EDN7550UXTSA1
1EDN7550UXTSA1
2023-7-201EDI40I12AFXUMA1
1EDI40I12AFXUMA1 栅极驱动IC
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正品
2019-3-1
DdatasheetPDF页码索引
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