12 AMP MEDIUM POWER SILICON RECTIFIER DIODES

Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260

Medium Power Silicon Rectifier Diodes, 12 A

FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Medium Power Silicon Rectifier Diodes, 12 A

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封装/外壳：DO-203AA，DO-4，接线柱 包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode and Rectifier Devices

SILICON POWER RECTIFIER

SILICON POWER RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Si Rectifier

Description: Si Rectifier, 10A

包装：散装 描述：STANDARD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单