Technical Specifications

Technical Specifications ■ Glass Passivated Die ■ Low Forward Voltage ■ 250A Surge Rating ■ Glass to metal seal construction ■ 1199RB VRRM = 50V. VRRM up to 1200V in this rectifier series.

Technical Specifications

Medium Power Silicon Rectifier Diodes, 12 A

FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Silicon-Power Rectifiers

Silicon-Power Rectifiers Nominal current – Nennstrom 12 A Repetitive peak reverse voltage 50 1000 V Weight approx. – Gewicht ca. 5.5 g Recommended mounting torque 18 ± 10 lb.in. Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R)

12 AMP MEDIUM POWER SILICON RECTIFIER DIODES

Description/Features ■ Voltage rating from 50 to 1,000 volts ■ High surge capability ■ Low thermal impedance ■ High temperature rating ■ Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260

Si Rectifier

Description: Si Rectifier, 10A

SILICON POWER RECTIFIER

Silicon Power Rectifier • Glass Passivated Die • Low Forward Voltage • 400A Surge Rating • Glass to metal seal construction • VRRM to 1600V • Excellent reliability