| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1ED2 | Medium Performance Compact EMI Power Inlet Filter 文件：255.27 Kbytes Page：4 Pages | MACOM |   | |
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) • Infineon thin-film-SOI-technology\n• Maximum blocking voltage +650 V\n• Output source/sink current +4 A/ -4 A\n• Maximum supply voltage of 25 V\n• Integrated Bootstrap Diode\n• Negative VS transient immunity of 100 V\n• Over current & under voltage protection\n• Multi-function RFE pin functionalit; | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) EiceDRIVER ™ 650 V 高压单通道栅极驱动器 IC，具有典型的 4 A 拉电流和 4 A 灌电流，采用 DSO-8 封装，适用于 IGBT、MOSFET 和 SiC MOSFET。 • 英飞凌薄膜 SOI 技术\n • 最大阻断电压 +650 V\n • 输出拉电流/灌电流 +4 A/ -4 A\n • 最大供电电压 25 V\n • 集成自举二极管\n • 100 V 的负 VS 瞬态抗扰度\n • 过流和欠压保护\n • 多功能 RFE 引脚功能\n • 传播延迟小于 100 纳秒\n • DSO-8 封装\n • 符合 RoHS 规定; | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) • Infineon thin-film-SOI-technology\n• Maximum blocking voltage +650 V\n• Output source/sink current +4 A/ -4 A\n• Maximum supply voltage of 25 V\n• Integrated Bootstrap Diode\n• Negative VS transient immunity of 100 V\n• Over current & under voltage protection\n• Multi-function RFE pin functionalit; | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | |
1ED2产品属性
- 类型
描述
- VBS UVLO(Off)：
8.7 V
- VCC UVLO(Off)：
8.7 V
- VCC UVLO(On)：
10 V
- Turn Off Propagation Delay：
55 ns
- Package：
PG-DSO-8
- Turn On Propagation Delay：
55 ns
- Voltage Class：
650 V
- Qualification：
Industrial
- Input Vcc：
10.8 V to 22 V
- Output Current(Source)：
4 A
- Output Current(Sink)：
4 A
- Channels：
1
- Configuration：
High-side
- Isolation Type：
Functional levelshift
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
25+ |
SOP |
7500 |
只在原厂代理订货,正规报关可含税长期供应 |
|||
INFINEON |
23+ |
SOP |
70000 |
专注配单,只做原装进口现货 |
1ED2规格书下载地址
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DdatasheetPDF页码索引
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