位置：首页 > IC中文资料第1968页 > 1ED2
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1ED2 | Medium Performance Compact EMI Power Inlet Filter 文件：255.27 Kbytes Page：4 Pages | MACOM |   | |
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +4 A/ -4 A • Maximum supply voltage of 25 V • Integrated ultra-fast, low RDS(ON) Bootstrap Diode • Negative VS transient immunity of 100 V • Detection of over current and under voltag | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) | INFINEON 英飞凌 | | ||
650 V 高端栅极驱动器 IC，具有过流保护 (OCP)、多功能 RCIN/故障/启用 (RFE) 和集成自举二极管 (BSD) | INFINEON 英飞凌 | |
1ED2产品属性
- 类型
描述
- 型号
1ED2
- 功能描述
交流电源输入模块 1A FASTON RHT ANGLE FLANGE MOUNT
- RoHS
否
- 制造商
Schurter
- 过滤
Yes
- 过滤器类型
IEC Inlet Filters
- 产品
Inlets
- 电流额定值
4 A
- 电压额定值
250 VAC
- 外壳材料
Thermoplastic
- 安装风格
Panel, Screw
- 端接类型
Quick Connect
- 工作温度范围
- 25 C to + 85 C
- 连接器类型
C-14
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
DSO-8 |
18746 |
样件支持,可原厂排单订货! |
|||
Infineon(英飞凌) |
25+ |
DSO-8 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Infineon(英飞凌) |
2511 |
PG-DSO-8 |
4945 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
||||
Infineon |
25+ |
PG-DSO-8 |
15500 |
英飞凌优势渠道全系列在售 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
INFINEON |
24+ |
PG-DSO-8 |
6000 |
全新原装特价 |
|||
Infineon(英飞凌) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
INFINEON |
25+ |
原封装 |
9960 |
郑重承诺只做原装进口货 |
1ED2芯片相关品牌
1ED2规格书下载地址
1ED2参数引脚图相关
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1ED2数据表相关新闻
1ED020I12FA2原装现货价优
1ED020I12FA2原装现货价优
2024-5-281ED3124MU12H
1ED3124MU12H
2024-1-261ED020I12FA2
1ED020I12FA2
2023-12-131ED3124MU12HXUMA1电动汽车快速充电的大功率解决方案
电动汽车快速充电解决方案可消除驾驶员的“续航里程焦虑”，进一步促进电动汽车在全球的普及
2023-3-61ED44175N01BXTSA1
1ED44175N01BXTSA1
2022-8-221EBN1001AE 原装正品现货 门驱动器 ISOLATED_HVGD
支持实单 价格优势 有单必成
2022-3-31
DdatasheetPDF页码索引
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