SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SCHOTTKY RECTIFIER

SCHOTTKY RECTIFIER

文件：100.37 Kbytes Page：5 Pages

180 Amp Schottky Rectifier

180 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 180 Amperes/80 to 100 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

180 Amp Schottky Rectifier

180 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 180 Amperes/80 to 100 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

Unique high power, Half-Pak module

文件：184.44 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：100.37 Kbytes Page：5 Pages

SCHOTTKY RECTIFIER

文件：306.57 Kbytes Page：4 Pages

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

文件：184.44 Kbytes Page：4 Pages

封装/外壳：HALF-PAK 包装：散装 描述：DIODE SCHOTTKY 80V 180A PRM1-1 分立半导体产品 二极管 - 整流器 - 单

功率模块

SCHOTTKY RECTIFIER

文件：100.37 Kbytes Page：5 Pages

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

文件：184.44 Kbytes Page：4 Pages

封装/外壳：D-67 半封装 包装：卷带（TR） 描述：DIODE SCHOTTKY 100V 180A HALFPAK 分立半导体产品 二极管 - 整流器 - 单

DIODE SCHOTTKY 100V 180A HALFPAK

SCHOTTKY RECTIFIER

文件：100.37 Kbytes Page：5 Pages

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

文件：184.44 Kbytes Page：4 Pages

SCHOTTKY RECTIFIER

文件：306.57 Kbytes Page：4 Pages

Schottky Rectifier, 180 A

文件：112.62 Kbytes Page：6 Pages

SCHOTTKY RECTIFIER

文件：100.37 Kbytes Page：5 Pages

Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA