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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
15GN01NA | NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)]. • Small output capacitance [Cob=1.3pF (VCB=10V)]. | SANYO 三洋 |   | |
15GN01NA | NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications | ONSEMI 安森美半导体 | | |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)] • Small output capacitance [Cob=1.2pF (VCB=10V)] | SANYO 三洋 | | ||
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)]. • Small output capacitance [Cob=1.05pF (VCB=10V)]. • Ultrasmall package permitting applied sets to be small and slim. • Halogen free compliance. | SANYO 三洋 | | ||
VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications VHF to UHF Band High-frequency Switching, High-frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)]. • Small output capacitance [Cob=1.1pF (VCB=10V)]. | SANYO 三洋 | | ||
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)] • Small output capacitance [Cob=1.1pF (VCB=10V)] | SANYO 三洋 | | ||
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications Features • Small ON-resistance [Ron=2Ω (IB=3mA)]. • Small output capacitance [Cob=1.0pF (VCB=10V)]. • Ultrasmall package permitting applied sets to be small and slim. | SANYO 三洋 | |
15GN01NA产品属性
- 类型
描述
- 型号
15GN01NA
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NAXIMSEMI |
23+ |
SOT-23 |
3015 |
全新 发货1-2天 |
|||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
TOSHIBA/东芝 |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
INFINEON |
23+ |
8000 |
只做原装现货 |
||||
INFINEON |
23+ |
7000 |
|||||
TMS |
24+ |
SOP14 |
100 |
||||
原厂原装 |
25+ |
SOJ |
9630 |
我们只做原装正品现货!量大价优! |
|||
ON/安森美 |
20+ |
SOT-23 |
120000 |
只做原装 可免费提供样品 |
|||
NAXIMSEMI |
25+ |
SOT-23 |
90000 |
全新原装现货 |
|||
24+ |
原厂封装 |
2500 |
原装现货假一罚十 |
15GN01NA规格书下载地址
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15GN01NA数据表相关新闻
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2019-10-3015KP17A-15000瓦的瞬态电压抑制器
15000瓦的瞬态电压抑制器17至280伏 特点 ☆15000瓦峰值脉冲电源10/1000us能力 ☆波形 ☆玻璃钝化结及塑料包装设备 ☆低增量浪涌电阻 ☆保证高温焊接 ☆快速响应时间 最大额定值 工作温度：-55℃~ +175℃ 储存温度：-55℃~+175℃ 最低15000瓦的峰值脉冲功率的能力上 10/1000us波形 Walts稳定状态功率损耗RL=75℃，铅
2012-11-10
DdatasheetPDF页码索引
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