200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time

12.0 A Forward Current 70 ns - 3000 ns Recovery Time

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Integrated Circuit Chroma Video Signal Processor

Description: The NTE1410 is an integrated circuit in a 28–Lead DIP type package designed for all color TV video and chrominance signal process circuits. Features: • The NTE1410 provides a total video and chrominance signal processing circuitry, allowing compact set design • Incorpora

0.5A HIGH-SPEED MOSFET DRIVERS

GENERAL DESCRIPTION The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logi

0.5A HIGH-SPEED MOSFET DRIVERS

GENERAL DESCRIPTION The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logi

0.5A HIGH-SPEED MOSFET DRIVERS

GENERAL DESCRIPTION The TC1410/1410N are 0.5V CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logi