丝印代码：14001；High Voltage Fast Switching PNP Power Transistor

FEATURES ● High speed switching. ● Small flat package. APPLICATIONS ● High voltage switch mode application.

包装：散装 描述：3M TROUBLESHOOTER BASEBOARD STRI 工具 化学品，清洁剂

SEMICONDUCTOR HEATER

>>Pressure clamp connectors >>Dynamic heating up >>Wide voltage range >>Energy saving >>Clip fixing >>Quick installation

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

标准整流二极管

1A,50V,ordinary rectifier diode

包装：散装 描述：TERM BLOCK HDR 5POS 90DEG 5.08MM 连接器，互连器件 针座、插头和插座

SL 5.08HC/05/90F 3.2SN GN BX

文件：591.16 Kbytes Page：6 Pages

tpm support

文件：375.34 Kbytes Page：2 Pages

tpm support

文件：375.34 Kbytes Page：2 Pages

Eaton HMI触摸屏, 70 x 53 mm, TFT, XV-102系列, 140013 XV-102-B3-35MQR-10-PLC

B-Suffix Serise CMOS Gates

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —