NPN Silicon Epitaxial Planar Transistor

文件：76.22 Kbytes Page：1 Pages

小信号晶体管

HIGH VOLTAGE FAST SWITCHING NPN POWER  APPLICATIONS

The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC 13002AG is designed for use in Compact Fluorescent Lamps. · High Voltage Capability \n· Low Spread of Dynamic Parameters \n· Very High Switching Speed;

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13002AH is suitable for electronic ballast power switch circuit and the compact el · High collector-base breakdown voltage \n· Low reverse leakage current \n· High reliability;

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：115.46 Kbytes Page：3 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：115.46 Kbytes Page：3 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：115.46 Kbytes Page：3 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：115.46 Kbytes Page：3 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：115.46 Kbytes Page：3 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS

文件：121.21 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW AMPLIFICATION

文件：152.47 Kbytes Page：4 Pages

NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION

文件：144.95 Kbytes Page：4 Pages

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency ele

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

POWER TRANSISTORS(1.5A,300-400V,40W)

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers an