12A 600V N-channel enhanced field effect transistor

文件：885.41 Kbytes Page：5 Pages

12 Amps, 600/650 Volts N-CHANNEL MOSFET

The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p

12 Amps, 600/650 Volts N-CHANNEL MOSFET

文件：358.2 Kbytes Page：7 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes Page：11 Pages

12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes Page：11 Pages

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

600V, SMPS Series N-Channel IGBT