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124NQ

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base plate: Nickel

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

SMCDIODE

桑德斯微电子

120 Amp Schottky Rectifier

文件:117.5 Kbytes Page:2 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

High frequency operation

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

功率模块

SMC

桑德斯微电子

120 Amp Schottky Rectifier

文件:117.5 Kbytes Page:2 Pages

MICROSEMI

美高森美

SCHOTTKY RECTIFIER

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

High frequency operation

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

功率模块

SMC

桑德斯微电子

封装/外壳:HALF-PAK 包装:散装 描述:DIODE SCHOTTKY 40V 120A PRM1-1 分立半导体产品 二极管 - 整流器 - 单

SMCDIODE

桑德斯微电子

120 Amp Schottky Rectifier

文件:117.5 Kbytes Page:2 Pages

MICROSEMI

美高森美

High frequency operation

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

SCHOTTKY RECTIFIER

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

功率模块

SMC

桑德斯微电子

封装/外壳:HALF-PAK 包装:散装 描述:DIODE SCHOTTKY 45V 120A PRM1-1 分立半导体产品 二极管 - 整流器 - 单

SMCDIODE

桑德斯微电子

124NQ060/R-1 SCHOTTKY RECTIFIER

文件:222.56 Kbytes Page:4 Pages

SMC

桑德斯微电子

124NQ040-1 124NQ045-1

文件:222.56 Kbytes Page:4 Pages

SMC

桑德斯微电子

124NQ060/R-1 SCHOTTKY RECTIFIER

文件:222.56 Kbytes Page:4 Pages

SMC

桑德斯微电子

High frequency operation

文件:217.17 Kbytes Page:4 Pages

SMC

桑德斯微电子

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

ONSEMI

安森美半导体

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

ONSEMI

安森美半导体

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

NTE

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

PHILIPS

飞利浦

丝印代码:-05;PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

PHILIPS

飞利浦

124NQ产品属性

  • 类型

    描述

  • 型号

    124NQ

  • 制造商

    MICROSEMI

  • 制造商全称

    Microsemi Corporation

  • 功能描述

    120 Amp Schottky Rectifier

更新时间:2026-3-17 20:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
UNIOHM
20+
0603
2390
原装现货支持BOM配单服务
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
IR
23+
模块
360
全新原装正品,量大可订货!可开17%增值票!价格优势!
24+
04021210
4520
TE
25+
100
原厂现货渠道
3M
23+
原厂封装
26
只做原装只有原装现货实报
UNIOHM
23+
0603
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
中性
DIP-2
50000
IR
23+
D-67 HALF-Pak
8000
只做原装现货

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