Power Surface Mount Schottky Rectifier (45V，120Amp)

150 C TJ operation Low forward voltage drop High surge capacities High frequency operation Guaranteed reverse avalanche capability Low profile surface mount package Base plate: Pure Sn plated; Terminals: Pure Sn plated This is a Pb − Free Device All SMC parts are traceable to the wafer lo

Power Surface Mount Schottky Rectifier (60V，120Amp)

150 C TJ operation Low forward voltage drop High surge capacities High frequency operation Guaranteed reverse avalanche capability Low profile surface mount package Base plate: Pure Sn plated; Terminals: Pure Sn plated Top lead frame is anode, Base plate is cathode This is a Pb − Free Dev

Power Surface Mount Schottky Rectifier

文件：155.11 Kbytes Page：4 Pages

肖特基二极管

封装/外壳：SPD-3A 包装：卷带（TR） 描述：DIODE SCHOTTKY 45V 120A SPD-3A 分立半导体产品 二极管 - 整流器 - 单

肖特基二极管

Power Surface Mount Schottky Rectifier

文件：155.45 Kbytes Page：4 Pages

肖特基二极管

Power Surface Mount Schottky Rectifier

文件：155.45 Kbytes Page：4 Pages

封装/外壳：SPD-3A 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 120A SPD-3A 分立半导体产品 二极管 - 整流器 - 单

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll