位置:首页 > IC中文资料第1608页 > 1133B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码:1133B1A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B1A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B1A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B2A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B2A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B2A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B3A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B3A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B3A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B3AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
丝印代码:1133B4A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B4A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B4A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B4AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
丝印代码:1133B5A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B5A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B5A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B5AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
丝印代码:1133B7A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B7AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
丝印代码:1133B7AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
丝印代码:1133B8A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B8A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B8A;TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |||
丝印代码:1133B8AQ1;TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | |||
Photo Modules for PCM Remote Control Systems Description The TSOP11.. – series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the | VISHAYVishay Siliconix 威世威世科技公司 | |||
REFLECTIVE OBJECT SENSORS 文件:148.71 Kbytes Page:2 Pages | QT | |||
REFLECTIVE OBJECT SENSOR 文件:145.35 Kbytes Page:2 Pages | QT | |||
RA1133J FULL FRAME CCD IMAGE SENSOR 文件:191.33 Kbytes Page:8 Pages | PERKINELMER | |||
RA1133J FULL FRAME CCD IMAGE SENSOR 文件:191.33 Kbytes Page:8 Pages | PERKINELMER |
1133B产品属性
- 类型
描述
- 型号
1133B
- 制造商
MK Electric
- 功能描述
JUNCTION BOX 3TERMINAL BROWN
- 制造商
MK(ELECTRIC)
- 功能描述
JUNCTION BOX, 3TERMINAL, BROWN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
TI |
25+ |
10-SOIC |
20948 |
样件支持,可原厂排单订货! |
|||
26+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY |
25+ |
电阻器 |
823 |
就找我吧!--邀您体验愉快问购元件! |
1133B规格书下载地址
1133B参数引脚图相关
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- 1132942
1133B数据表相关新闻
112BX
112BX
2024-5-24113991114
113991114
2023-12-181-1393260-0
製造商: TE Connectivity 產品類型: 安全繼電器 RoHS: 詳細資料 線圈電壓: 48 VDC 繼電器觸點形式: 4 Form A (4PST-NO), 2 Form B (DPDT-NC) 觸點終端: Solder Pin 觸點容量: 8 A 封裝: Bulk 觸點形式: 4PST (4 Form A), DPDT (2 Form B) 系列: SR6 品牌: TE Connectivity 線圈電阻: 1.92 kOhms
2021-6-101-1393260-0
1-1393260-0
2021-6-10111SM2-T
111SM2-T,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-2-911229-24原装现货
11229-24 11229-24 ROKWELL QFP 99+ 24 全新原装自己现货 普通 1141 V1-1LF SAFENET TQFP12 05+ 63 全新原装自己现货 普通 1159K-DB SUN QFP 03+ 2884 全新原装自己现货 普通 1159AB2-DB LUCENT QFP160 00+ 744 全新原装自己现货 普通 1159K AGERESYSTEM QFP 0320+ 96 全新原装自己现货 普通 1178AA AGERE QFP100 02+
2020-6-17
DdatasheetPDF页码索引
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