1133价格
参考价格：￥0.9377
型号：1133-4-N 品牌：RAF 备注：这里有1133多少钱，2026年最近7天走势，今日出价，今日竞价，1133批发/采购报价，1133行情走势销售排行榜，1133报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：1133；Positive Temperature Coefficient (PTC) Data Sheet Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le | BRIGHTKING 君耀 |   | ||
丝印代码：1133；Positive Temperature Coefficient (PTC) Data Sheet Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le | BRIGHTKING 君耀 | | ||
1133 | 1133 Differential Pressure Gauge FEATURES High static pressure capability (500 psi) Ranges from 1 IWD to 25 IWD Reed switches (OPT.) for direct system control Superior magnets for smoother pointer motion Buna-N Diaphragm & O-Rings (others available) Large convoluted diaphragm actuator | ASHCROFT 雅斯科 | | |
丝印代码：1133A1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133A5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B3AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133B4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B4AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133B5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B5AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133B7A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B7AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133B7AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133B8A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B8A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B8A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133B8AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133C1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C1A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C1AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133C2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C2A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C2AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133C3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C3A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C3AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133C4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C4A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | | ||
丝印代码：1133C4AQ1；TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S | TI 德州仪器 | | ||
丝印代码：1133C5A；TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri | TI 德州仪器 | |
1133产品属性
- 类型
描述
- 颜色：
绿色
- 总PIN数：
13P
- 排数：
1
- 每排PIN数：
13
- 线规 - AWG：
10~22
- 线规 - 平方毫米：
0.2~4
- 工作温度范围：
-30℃~+105℃
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SKE |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
VISHAY |
SMA |
50000 |
|||||
24+ |
3000 |
自己现货 |
|||||
25+ |
66880 |
原装正品，欢迎询价 |
|||||
DONGHEUNG |
2022+ |
800 |
全新原装 货期两周 |
||||
亿光2504043679 |
14+ |
SMD |
0 |
原装现货价格有优势量大可以发货 |
1133规格书下载地址
1133参数引脚图相关
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- 256p
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- 1n4148
- 18000
- 1470
- 1427
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- 13002
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- 1138C
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- 1135-3
- 1-1350
- 1134C
- 1134-5
- 1133C
- 1-1337422-0
- 1-1337421-0
- 1-1337418-0
- 1-1337416-0
- 1-1337415-0
- 1-1337410-0
- 1-1337406-0
- 1-1337402-0
- 1133-6-SS
- 1133-6-N
- 1133-6-AL-7
- 1133-4-SS
- 1133-4-N
- 1-1333200-6
- 113-314-04
- 113-314-01
- 11-330-C
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- 11-33
- 11-32TGN
- 1132C
- 1132983
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- 1132958
- 1132957
- 1132956
- 1132955
- 1132954
- 1132953
- 1132952
- 1132951
- 1132950
- 1132949
- 1132948
- 1132947
- 1132946
- 1132945
- 1132944
- 1132943
- 1132942
- 1132931203
- 1132-8-SS
- 1132-8-N
- 1132-8-AL-7
- 11328
- 11327
- 1132-6-N
- 1132-6-AL-7
- 1-1326032-2
- 1-1326031-0
- 1132-4-N
- 1132-4-AL-7
- 11-32-4410
- 11-323-6-05
- 11322
- 11321
- 113200000
- 11320
- 1132/60M122201
1133数据表相关新闻
112BX
112BX
2024-5-24113991114
113991114
2023-12-181-1393260-0
製造商: TE Connectivity 產品類型: 安全繼電器 RoHS: 詳細資料 線圈電壓: 48 VDC 繼電器觸點形式: 4 Form A (4PST-NO)， 2 Form B (DPDT-NC) 觸點終端: Solder Pin 觸點容量: 8 A 封裝: Bulk 觸點形式: 4PST (4 Form A)， DPDT (2 Form B) 系列: SR6 品牌: TE Connectivity 線圈電阻: 1.92 kOhms
2021-6-101-1393260-0
1-1393260-0
2021-6-10111SM2-T
111SM2-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-911229-24原装现货
11229-24 11229-24 ROKWELL QFP 99+ 24 全新原装自己现货 普通 1141 V1-1LF SAFENET TQFP12 05+ 63 全新原装自己现货 普通 1159K-DB SUN QFP 03+ 2884 全新原装自己现货 普通 1159AB2-DB LUCENT QFP160 00+ 744 全新原装自己现货 普通 1159K AGERESYSTEM QFP 0320+ 96 全新原装自己现货 普通 1178AA AGERE QFP100 02+
2020-6-17
DdatasheetPDF页码索引
- P1
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